DE69203784D1 - Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung. - Google Patents

Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung.

Info

Publication number
DE69203784D1
DE69203784D1 DE69203784T DE69203784T DE69203784D1 DE 69203784 D1 DE69203784 D1 DE 69203784D1 DE 69203784 T DE69203784 T DE 69203784T DE 69203784 T DE69203784 T DE 69203784T DE 69203784 D1 DE69203784 D1 DE 69203784D1
Authority
DE
Germany
Prior art keywords
gain
semiconductor laser
distributed feedback
coupled semiconductor
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69203784T
Other languages
English (en)
Other versions
DE69203784T2 (de
Inventor
Marina Meliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
CSELT Centro Studi e Laboratori Telecomunicazioni SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSELT Centro Studi e Laboratori Telecomunicazioni SpA filed Critical CSELT Centro Studi e Laboratori Telecomunicazioni SpA
Publication of DE69203784D1 publication Critical patent/DE69203784D1/de
Application granted granted Critical
Publication of DE69203784T2 publication Critical patent/DE69203784T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69203784T 1991-05-13 1992-05-12 Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung. Expired - Fee Related DE69203784T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO910352A IT1245541B (it) 1991-05-13 1991-05-13 Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione

Publications (2)

Publication Number Publication Date
DE69203784D1 true DE69203784D1 (de) 1995-09-07
DE69203784T2 DE69203784T2 (de) 1995-12-21

Family

ID=11409344

Family Applications (2)

Application Number Title Priority Date Filing Date
DE199292108011T Pending DE513745T1 (de) 1991-05-13 1992-05-12 Gewinngekoppelter halbleiterlaser mit verteilter rueckkoppelung.
DE69203784T Expired - Fee Related DE69203784T2 (de) 1991-05-13 1992-05-12 Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE199292108011T Pending DE513745T1 (de) 1991-05-13 1992-05-12 Gewinngekoppelter halbleiterlaser mit verteilter rueckkoppelung.

Country Status (6)

Country Link
US (1) US5276702A (de)
EP (1) EP0513745B1 (de)
JP (1) JPH07118567B2 (de)
CA (1) CA2068443C (de)
DE (2) DE513745T1 (de)
IT (1) IT1245541B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
US5539766A (en) * 1993-08-19 1996-07-23 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser
FR2713350B1 (fr) * 1993-12-06 1995-12-29 Franck Delorme Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.
EP1130716A2 (de) * 1994-09-28 2001-09-05 Matsushita Electric Industrial Co., Ltd. Halbleiterlaser mit verteilter Rückkopplung und Herstellungsverfahren
DE69525128T2 (de) * 1994-10-26 2002-09-05 Mitsubishi Chem Corp Lichtemittierende Halbleiteranordnung und Herstellungsverfahren
TW304310B (de) * 1995-05-31 1997-05-01 Siemens Ag
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
JP4375834B2 (ja) 1998-03-19 2009-12-02 シャープ株式会社 利得結合型分布帰還半導体レーザ装置及びその製造方法
US6285698B1 (en) 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
JP2000261104A (ja) * 1999-03-08 2000-09-22 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法
US6574256B1 (en) 2000-01-18 2003-06-03 Xerox Corporation Distributed feedback laser fabricated by lateral overgrowth of an active region
US7016391B2 (en) 2000-03-13 2006-03-21 Sharp Kabushiki Kaisha Gain-coupled distributed feedback semiconductor laser device and production method therefor
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6649439B1 (en) * 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process
DE102005005635A1 (de) * 2004-08-31 2006-03-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes optoelektronisches Bauelement mit einer Quantentopfstruktur und Verfahren zu dessen Herstellung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633476A (en) * 1984-11-16 1986-12-30 Spectra Diode Laboratories, Inc. Semiconductor laser with internal reflectors and vertical output
JPH0716079B2 (ja) * 1987-07-10 1995-02-22 松下電器産業株式会社 半導体レ−ザ装置
JPS6421986A (en) * 1987-07-17 1989-01-25 Nippon Telegraph & Telephone Manufacture of quantum fine line laser diode of current-injection type having buried structure
JPH01106489A (ja) * 1987-10-20 1989-04-24 Fujitsu Ltd 半導体装置及びその製造方法
JPH01248586A (ja) * 1988-03-29 1989-10-04 Nec Corp 光半導体装置の製造方法
JP2713445B2 (ja) * 1988-11-25 1998-02-16 古河電気工業株式会社 半導体レーザ素子
JPH02163928A (ja) * 1988-12-16 1990-06-25 Fujitsu Ltd 量子細線または量子箱の形成方法
JPH02254778A (ja) * 1989-03-29 1990-10-15 Olympus Optical Co Ltd 分布帰還形半導体レーザ及びその製造方法

Also Published As

Publication number Publication date
EP0513745B1 (de) 1995-08-02
IT1245541B (it) 1994-09-29
JPH07118567B2 (ja) 1995-12-18
ITTO910352A1 (it) 1992-11-13
DE513745T1 (de) 1993-09-23
CA2068443A1 (en) 1992-11-14
DE69203784T2 (de) 1995-12-21
EP0513745A3 (de) 1992-12-02
JPH05183236A (ja) 1993-07-23
EP0513745A2 (de) 1992-11-19
US5276702A (en) 1994-01-04
CA2068443C (en) 1996-05-21
ITTO910352A0 (it) 1991-05-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: OPTICAL TECHNOLOGIES CENTER S.R.L., TURIN/TORINO,

8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC., A CORPORATION OF THE S

8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8339 Ceased/non-payment of the annual fee