DE69117488D1 - Halbleiterlaser mit verteilter rückkoppelung - Google Patents

Halbleiterlaser mit verteilter rückkoppelung

Info

Publication number
DE69117488D1
DE69117488D1 DE69117488T DE69117488T DE69117488D1 DE 69117488 D1 DE69117488 D1 DE 69117488D1 DE 69117488 T DE69117488 T DE 69117488T DE 69117488 T DE69117488 T DE 69117488T DE 69117488 D1 DE69117488 D1 DE 69117488D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
distributed feedback
feedback
distributed
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69117488T
Other languages
English (en)
Other versions
DE69117488T2 (de
Inventor
Kunio Tada
Yoshiaki Nakano
Takeshi Inoue
Takeshi Irita
Shin-Ichi Nakajima
Yi Luo
Hideto Iwaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optical Measurement Technology Development Co Ltd
Original Assignee
Optical Measurement Technology Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2282699A external-priority patent/JPH0744316B2/ja
Priority claimed from JP18120991A external-priority patent/JPH0529705A/ja
Application filed by Optical Measurement Technology Development Co Ltd filed Critical Optical Measurement Technology Development Co Ltd
Application granted granted Critical
Publication of DE69117488D1 publication Critical patent/DE69117488D1/de
Publication of DE69117488T2 publication Critical patent/DE69117488T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
DE69117488T 1990-10-19 1991-10-17 Halbleiterlaser mit verteilter rückkoppelung Expired - Fee Related DE69117488T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2282699A JPH0744316B2 (ja) 1990-10-19 1990-10-19 半導体分布帰還型レーザ装置およびその製造方法
JP18120991A JPH0529705A (ja) 1991-07-22 1991-07-22 半導体分布帰還型レーザ装置
PCT/JP1991/001418 WO1992007401A1 (en) 1990-10-19 1991-10-17 Distributed feedback semiconductor laser

Publications (2)

Publication Number Publication Date
DE69117488D1 true DE69117488D1 (de) 1996-04-04
DE69117488T2 DE69117488T2 (de) 1996-10-02

Family

ID=26500477

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69117488T Expired - Fee Related DE69117488T2 (de) 1990-10-19 1991-10-17 Halbleiterlaser mit verteilter rückkoppelung

Country Status (4)

Country Link
US (1) US5289494A (de)
EP (1) EP0507956B1 (de)
DE (1) DE69117488T2 (de)
WO (1) WO1992007401A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2986604B2 (ja) * 1992-01-13 1999-12-06 キヤノン株式会社 半導体光フィルタ、その選択波長の制御方法及びそれを用いた光通信システム
US5539766A (en) * 1993-08-19 1996-07-23 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser
US5452318A (en) * 1993-12-16 1995-09-19 Northern Telecom Limited Gain-coupled DFB laser with index coupling compensation
EP1130715A2 (de) * 1994-09-28 2001-09-05 Matsushita Electric Industrial Co., Ltd. Halbleiterlaser mit verteilter Rückkopplung und Herstellungsverfahren
US5506859A (en) * 1995-02-16 1996-04-09 At&T Corp. Article comprising a DFB laser with loss coupling
JP3714984B2 (ja) * 1995-03-06 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置
TW304310B (de) * 1995-05-31 1997-05-01 Siemens Ag
KR0178490B1 (ko) * 1995-12-20 1999-04-15 양승택 표면 발광 레이저
JPH09311220A (ja) * 1996-03-19 1997-12-02 Canon Inc 異なる偏光依存性を持つ領域が交互に配置された回折格子、及びそれを用いた光半導体デバイス
US5936994A (en) * 1997-09-18 1999-08-10 Northern Telecom Limited Two-section complex coupled distributed feedback semiconductor laser with enhanced wavelength tuning range
US6026110A (en) * 1997-10-16 2000-02-15 Nortel Networks Corporation Distributed feedback semiconductor laser with gain modulation
US6285698B1 (en) 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
US6546032B1 (en) * 1999-08-27 2003-04-08 Mitsui Chemicals, Inc. Semiconductor laser apparatus
JP2002064244A (ja) * 2000-06-06 2002-02-28 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子
US6440764B1 (en) 2000-11-22 2002-08-27 Agere Systems Guardian Corp. Enhancement of carrier concentration in As-containing contact layers
KR100388485B1 (ko) * 2001-05-31 2003-06-25 한국전자통신연구원 다파장 단일모드 레이저 어레이 및 그 제조 방법
JP5099948B2 (ja) * 2001-08-28 2012-12-19 古河電気工業株式会社 分布帰還型半導体レーザ素子
DE10200360B4 (de) * 2002-01-08 2004-01-08 Forschungsverbund Berlin E.V. Verfahren zur Herstellung eines Braggschen Gitters in einer Halbleiterschichtenfolge mittels Ätzen und Halbleiterbauelement
WO2009116152A1 (ja) * 2008-03-19 2009-09-24 富士通株式会社 光素子及びその製造方法
JP6331997B2 (ja) 2014-11-28 2018-05-30 三菱電機株式会社 半導体光素子

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ
JPS60164380A (ja) * 1984-02-06 1985-08-27 Nec Corp 半導体レ−ザの製造方法
JPS60240178A (ja) * 1984-05-15 1985-11-29 Fujikura Ltd 分布帰還形半導体レ−ザ
JPS6329596A (ja) * 1986-07-22 1988-02-08 Mitsubishi Electric Corp 半導体レ−ザ
JPS63189593A (ja) * 1987-01-29 1988-08-05 株式会社イセキ開発工機 既設管路の更新方法および装置
JPH01168729A (ja) * 1987-12-24 1989-07-04 Kanebo Ltd ポリエステルエラストマーの製造方法
JPS6477984A (en) * 1987-09-18 1989-03-23 Fujitsu Ltd Distribution feedback type semiconductor laser
US5145792A (en) * 1988-05-23 1992-09-08 Optical Measurement Technology Development Co., Ltd. Method of fabricating a semiconductor optical device
EP0404551A3 (de) * 1989-06-20 1992-08-26 Optical Measurement Technology Development Co. Ltd. Optische Halbleitervorrichtung
JP2957198B2 (ja) * 1989-07-18 1999-10-04 光計測技術開発株式会社 半導体レーザ装置
JPH088394B2 (ja) * 1989-06-30 1996-01-29 三菱電機株式会社 半導体レーザおよびその製造方法
JPH0349284A (ja) * 1989-07-18 1991-03-04 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体レーザ装置およびその製造方法
JPH0349285A (ja) * 1989-07-18 1991-03-04 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体レーザ装置およびその製造方法
DE69027368T2 (de) * 1989-06-30 1997-01-30 Optical Measurement Technology Halbleiterlaser und Verfahren zur Herstellung desselben
JP2852663B2 (ja) * 1989-07-18 1999-02-03 光計測技術開発株式会社 半導体レーザ装置およびその製造方法
JP2903321B2 (ja) * 1989-07-18 1999-06-07 光計測技術開発株式会社 半導体レーザ装置の製造方法
US5061030A (en) * 1989-08-15 1991-10-29 Optical Measurement Technology Development Co., Ltd. Optical integrated modulator
DE4014233A1 (de) * 1990-05-03 1991-11-07 Siemens Ag Dfb-laserdiode mit reiner gainkopplung
JPH07123170B2 (ja) * 1990-08-07 1995-12-25 光計測技術開発株式会社 受光素子

Also Published As

Publication number Publication date
US5289494A (en) 1994-02-22
DE69117488T2 (de) 1996-10-02
EP0507956A4 (en) 1993-03-10
EP0507956A1 (de) 1992-10-14
EP0507956B1 (de) 1996-02-28
WO1992007401A1 (en) 1992-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee