DE69218802D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69218802D1
DE69218802D1 DE69218802T DE69218802T DE69218802D1 DE 69218802 D1 DE69218802 D1 DE 69218802D1 DE 69218802 T DE69218802 T DE 69218802T DE 69218802 T DE69218802 T DE 69218802T DE 69218802 D1 DE69218802 D1 DE 69218802D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69218802T
Other languages
English (en)
Other versions
DE69218802T2 (de
Inventor
Thomas L Paoli
John E Epler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of DE69218802D1 publication Critical patent/DE69218802D1/de
Application granted granted Critical
Publication of DE69218802T2 publication Critical patent/DE69218802T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69218802T 1991-01-08 1992-01-08 Halbleiterlaser Expired - Lifetime DE69218802T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/638,587 US5114877A (en) 1991-01-08 1991-01-08 Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth

Publications (2)

Publication Number Publication Date
DE69218802D1 true DE69218802D1 (de) 1997-05-15
DE69218802T2 DE69218802T2 (de) 1997-10-23

Family

ID=24560630

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218802T Expired - Lifetime DE69218802T2 (de) 1991-01-08 1992-01-08 Halbleiterlaser

Country Status (4)

Country Link
US (1) US5114877A (de)
EP (1) EP0494765B1 (de)
JP (1) JP3048273B2 (de)
DE (1) DE69218802T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436192A (en) * 1989-03-24 1995-07-25 Xerox Corporation Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth
US5362973A (en) * 1990-06-25 1994-11-08 Xerox Corporation Quantum fabricated via photo induced evaporation enhancement during in situ epitaxial growth
US5175740A (en) * 1991-07-24 1992-12-29 Gte Laboratories Incorporated Semiconductor laser and method of fabricating same
JP2976995B2 (ja) * 1991-10-02 1999-11-10 株式会社アドバンテスト 金属原子細線成長方法及び原子細線デバイス
JPH05267781A (ja) * 1991-12-24 1993-10-15 Samsung Electron Co Ltd レーザダイオード及びレーザダイオードアレイの製造方法
US6320200B1 (en) * 1992-06-01 2001-11-20 Yale University Sub-nanoscale electronic devices and processes
US5475341A (en) * 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
JPH06232099A (ja) 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
GB2299707B (en) * 1992-09-10 1997-01-22 Mitsubishi Electric Corp Method for producing a semiconductor device
JPH07118570B2 (ja) * 1993-02-01 1995-12-18 日本電気株式会社 面発光素子およびその製造方法
JPH0738194A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JPH07183618A (ja) * 1993-12-22 1995-07-21 Ricoh Co Ltd 半導体レーザ装置、半導体レーザ装置製造方法並びに集積型半導体レーザ装置
US5770475A (en) * 1996-09-23 1998-06-23 Electronics And Telecommunications Research Institute Crystal growth method for compound semiconductor
KR100234001B1 (ko) * 1996-10-30 1999-12-15 박호군 양자세선 레이저 다이오드 제작방법
WO1998048456A1 (en) 1997-04-24 1998-10-29 Massachusetts Institute Of Technology Nanowire arrays
US6494217B2 (en) 1998-03-12 2002-12-17 Motorola, Inc. Laser cleaning process for semiconductor material and the like
JP2000261104A (ja) * 1999-03-08 2000-09-22 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法
EP1480304B1 (de) * 2002-02-27 2007-04-11 Japan Science and Technology Agency Quanten-nanozusammensetzungshalbleiterlaser und quanten-nanozusammensetzungsarray
EP1520328A1 (de) * 2002-06-10 2005-04-06 Agilent Technologies, Inc. Quanten-dot-gain-chip
FR2914783A1 (fr) * 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
KR101164026B1 (ko) * 2007-07-12 2012-07-18 삼성전자주식회사 질화물계 반도체 발광소자 및 그 제조방법
KR20100093872A (ko) * 2009-02-17 2010-08-26 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR20160029005A (ko) * 2013-06-28 2016-03-14 인텔 코포레이션 III-N 에피택시를 위한 Si (100) 웨이퍼들 상의 Si (111) 평면들을 가진 나노구조들 및 나노피처들

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925399B2 (ja) * 1979-11-28 1984-06-16 三菱電機株式会社 半導体レ−ザの製造方法
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS57162484A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
JPS58200985A (ja) * 1982-05-19 1983-11-22 高砂工業株式会社 瓦の燻化装置
US4504952A (en) * 1982-06-01 1985-03-12 At&T Bell Laboratories Stripe-guide TJS laser
JPS5923575A (ja) * 1982-07-30 1984-02-07 Fujitsu Ltd 半導体発光装置
JPS6180881A (ja) * 1984-09-28 1986-04-24 Toshiba Corp 半導体レ−ザ装置
JPS61102086A (ja) * 1984-10-24 1986-05-20 Mitsubishi Electric Corp 半導体レ−ザ
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
US4871690A (en) * 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
US4860298A (en) * 1988-04-12 1989-08-22 Dan Botez Phased-locked array of semiconductor lasers using closely spaced antiguides
JPS63255987A (ja) * 1987-04-14 1988-10-24 Oki Electric Ind Co Ltd 埋込み型ｄｂｒ半導体レ−ザ
JPS63300586A (ja) * 1987-05-29 1988-12-07 Sharp Corp 半導体レ−ザ装置
GB8806800D0 (en) * 1988-03-22 1988-04-20 British Telecomm Etching methods
US4962057A (en) * 1988-10-13 1990-10-09 Xerox Corporation Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth
US4980314A (en) * 1989-06-06 1990-12-25 At&T Bell Laboratories Vapor processing of a substrate
US5362973A (en) * 1990-06-25 1994-11-08 Xerox Corporation Quantum fabricated via photo induced evaporation enhancement during in situ epitaxial growth

Also Published As

Publication number Publication date
EP0494765B1 (de) 1997-04-09
EP0494765A3 (en) 1992-10-21
JPH04314376A (ja) 1992-11-05
EP0494765A2 (de) 1992-07-15
US5114877A (en) 1992-05-19
JP3048273B2 (ja) 2000-06-05
DE69218802T2 (de) 1997-10-23

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Legal Events

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