DE69223737D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69223737D1
DE69223737D1 DE69223737T DE69223737T DE69223737D1 DE 69223737 D1 DE69223737 D1 DE 69223737D1 DE 69223737 T DE69223737 T DE 69223737T DE 69223737 T DE69223737 T DE 69223737T DE 69223737 D1 DE69223737 D1 DE 69223737D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223737T
Other languages
English (en)
Other versions
DE69223737T2 (de
Inventor
Kazuhiko Itaya
Genichi Hatakoshi
Koichi Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69223737D1 publication Critical patent/DE69223737D1/de
Application granted granted Critical
Publication of DE69223737T2 publication Critical patent/DE69223737T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69223737T 1991-10-21 1992-10-20 Halbleiterlaser Expired - Fee Related DE69223737T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27291091A JP3242955B2 (ja) 1991-10-21 1991-10-21 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69223737D1 true DE69223737D1 (de) 1998-02-05
DE69223737T2 DE69223737T2 (de) 1998-05-14

Family

ID=17520464

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223737T Expired - Fee Related DE69223737T2 (de) 1991-10-21 1992-10-20 Halbleiterlaser

Country Status (4)

Country Link
US (1) US5343486A (de)
EP (1) EP0539162B1 (de)
JP (1) JP3242955B2 (de)
DE (1) DE69223737T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263811A (ja) * 1994-03-25 1995-10-13 Hitachi Ltd 半導体レーザ装置
DE4412859C1 (de) * 1994-04-14 1994-11-10 Vdo Schindling Zielführungsanzeige
JPH09139550A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
KR100539354B1 (ko) * 1996-09-06 2006-03-09 산요덴키가부시키가이샤 반도체 레이저 소자
AUPO797897A0 (en) * 1997-07-15 1997-08-07 Silverbrook Research Pty Ltd Media device (ART18)
GB2346735B (en) 1999-02-13 2004-03-31 Sharp Kk A semiconductor laser device
JP2001266389A (ja) * 2000-03-23 2001-09-28 Tdk Corp 近接場光を用いる光ヘッド
JP2002076502A (ja) * 2000-08-31 2002-03-15 Sanyo Electric Co Ltd 半導体レーザ素子
DE10061701A1 (de) * 2000-12-12 2002-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser mit lateraler Stromführung und Verfahren zu dessen Herstellung
JP2003133638A (ja) * 2001-08-14 2003-05-09 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子及びレーザモジュール
JP5099948B2 (ja) * 2001-08-28 2012-12-19 古河電気工業株式会社 分布帰還型半導体レーザ素子
JP2003152274A (ja) * 2001-11-13 2003-05-23 Furukawa Electric Co Ltd:The 半導体レーザ装置、半導体レーザモジュールおよびこれを用いたラマン増幅器
US7116692B2 (en) * 2001-12-11 2006-10-03 Rohm Co., Ltd. Semiconductor laser and method of producing the same
JP2004119817A (ja) * 2002-09-27 2004-04-15 Sharp Corp 半導体レーザ素子およびその製造方法
GB2427751A (en) * 2005-06-28 2007-01-03 Bookham Technology Plc High power semiconductor opto-electronic device
GB2427752A (en) * 2005-06-28 2007-01-03 Bookham Technology Plc High power semiconductor laser diode
JP5440304B2 (ja) * 2010-03-19 2014-03-12 富士通株式会社 光半導体装置及びその製造方法
US9164247B2 (en) * 2011-07-28 2015-10-20 Source Photonics, Inc. Apparatuses for reducing the sensitivity of an optical signal to polarization and methods of making and using the same
CN105280746B (zh) * 2014-07-25 2018-04-13 江苏宜兴德融科技有限公司 多结太阳能电池外延结构、多结太阳能电池及其制备方法
JP7105442B2 (ja) * 2018-08-06 2022-07-25 セイコーエプソン株式会社 発光装置およびプロジェクター

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60149183A (ja) * 1984-01-17 1985-08-06 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS63124484A (ja) * 1986-11-12 1988-05-27 Sharp Corp 半導体レ−ザ素子
JPS648691A (en) * 1987-06-30 1989-01-12 Sharp Kk Integrated semiconductor laser element
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser

Also Published As

Publication number Publication date
JP3242955B2 (ja) 2001-12-25
EP0539162B1 (de) 1997-12-29
JPH05114765A (ja) 1993-05-07
US5343486A (en) 1994-08-30
DE69223737T2 (de) 1998-05-14
EP0539162A1 (de) 1993-04-28

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee