DE69115555T2 - Halbleiterlaser - Google Patents
HalbleiterlaserInfo
- Publication number
- DE69115555T2 DE69115555T2 DE69115555T DE69115555T DE69115555T2 DE 69115555 T2 DE69115555 T2 DE 69115555T2 DE 69115555 T DE69115555 T DE 69115555T DE 69115555 T DE69115555 T DE 69115555T DE 69115555 T2 DE69115555 T2 DE 69115555T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/2209—GaInP based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11734690 | 1990-05-07 | ||
JP02221281A JP3135250B2 (ja) | 1990-08-24 | 1990-08-24 | 半導体レーザ装置 |
JP03001082A JP3115006B2 (ja) | 1990-05-07 | 1991-01-09 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69115555D1 DE69115555D1 (de) | 1996-02-01 |
DE69115555T2 true DE69115555T2 (de) | 1996-09-05 |
Family
ID=27274752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69115555T Expired - Fee Related DE69115555T2 (de) | 1990-05-07 | 1991-05-03 | Halbleiterlaser |
Country Status (3)
Country | Link |
---|---|
US (1) | US5202895A (de) |
EP (1) | EP0456429B1 (de) |
DE (1) | DE69115555T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5190891A (en) * | 1990-06-05 | 1993-03-02 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating a semiconductor laser device in which the p-type clad layer and the active layer are grown at different rates |
US5276698A (en) * | 1990-09-20 | 1994-01-04 | Sumitomo Electric Ind., Ltd. | Semiconductor laser having an optical waveguide layer including an AlGaInP active layer |
JP3135960B2 (ja) * | 1991-12-20 | 2001-02-19 | シャープ株式会社 | 半導体レーザ装置 |
JPH05243676A (ja) * | 1992-02-28 | 1993-09-21 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH07162089A (ja) * | 1993-12-13 | 1995-06-23 | Mitsubishi Electric Corp | 可視光レーザダイオード及びその製造方法 |
US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
JP3553147B2 (ja) * | 1994-09-05 | 2004-08-11 | 三菱電機株式会社 | 半導体層の製造方法 |
US5727012A (en) * | 1996-03-07 | 1998-03-10 | Lucent Technologies Inc. | Heterostructure laser |
JPH10321903A (ja) * | 1997-05-15 | 1998-12-04 | Rohm Co Ltd | 半導体発光素子およびその製法 |
KR100495220B1 (ko) * | 2003-06-25 | 2005-06-14 | 삼성전기주식회사 | 고차모드 흡수층을 갖는 반도체 레이저 다이오드 |
US20050281298A1 (en) * | 2004-04-02 | 2005-12-22 | K2 Optronics | Analog external cavity laser |
US8063397B2 (en) * | 2006-06-28 | 2011-11-22 | Massachusetts Institute Of Technology | Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5769793A (en) * | 1980-10-16 | 1982-04-28 | Mitsubishi Electric Corp | Semiconductor laser device |
JPH0650723B2 (ja) * | 1984-10-17 | 1994-06-29 | 日本電気株式会社 | エピタキシヤル成長方法 |
US4799228A (en) * | 1985-08-23 | 1989-01-17 | Kabushiki Kaisha Toshiba | Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide |
DE3789695T2 (de) * | 1986-08-08 | 1994-08-25 | Toshiba Kawasaki Kk | Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter. |
EP0328393B1 (de) * | 1988-02-09 | 1993-10-06 | Kabushiki Kaisha Toshiba | Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren |
EP0333418B1 (de) * | 1988-03-14 | 1994-10-19 | Kabushiki Kaisha Toshiba | Halbleiterlaser-Vorrichtung |
JP2685209B2 (ja) * | 1988-03-25 | 1997-12-03 | 株式会社東芝 | 半導体装置及び半導体発光装置 |
JP2721185B2 (ja) * | 1988-07-25 | 1998-03-04 | 株式会社東芝 | リブ導波路型発光半導体装置 |
DE69031415T2 (de) * | 1989-10-31 | 1998-04-02 | Furukawa Electric Co Ltd | Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung |
-
1991
- 1991-05-03 EP EP91304037A patent/EP0456429B1/de not_active Expired - Lifetime
- 1991-05-03 US US07/695,088 patent/US5202895A/en not_active Expired - Lifetime
- 1991-05-03 DE DE69115555T patent/DE69115555T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0456429A2 (de) | 1991-11-13 |
DE69115555D1 (de) | 1996-02-01 |
US5202895A (en) | 1993-04-13 |
EP0456429B1 (de) | 1995-12-20 |
EP0456429A3 (en) | 1992-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69220434T2 (de) | Halbleiterlaser | |
NO914521D0 (no) | Laser | |
DE69305928D1 (de) | Halbleiterlaser | |
DE69407455D1 (de) | Halbleiterlaser | |
DE69120185T2 (de) | Halbleiterlaser | |
DE69218802T2 (de) | Halbleiterlaser | |
DE69212938D1 (de) | Halbleiterlaser | |
DE69009448D1 (de) | Halbleiterlaseranordnung. | |
DE69223737D1 (de) | Halbleiterlaser | |
DE69209045D1 (de) | Halbleiterlaser | |
DE69217679T2 (de) | Halbleiterlaser | |
DE69227403T2 (de) | Halbleiterlaser | |
DE69115555D1 (de) | Halbleiterlaser | |
DE69115622T2 (de) | Halbleiterlaser-Verstärker | |
DE69226027T2 (de) | Halbleiterlaser | |
DE69209426T2 (de) | Halbleiterlaser | |
DE69109388D1 (de) | Halbleiterlaser. | |
DE69102092D1 (de) | Halbleiterlaser. | |
DE69224054D1 (de) | Halbleiterlaser | |
DE69120496T2 (de) | Halbleiterlaser | |
DE69407374D1 (de) | Halbleiterlaser | |
DE59108559D1 (de) | Halbleiter-Laser | |
DE69402115T2 (de) | Halbleiterlaser | |
DE69129491T2 (de) | Halbleiterlaser | |
DE69218683T2 (de) | Halbleiterlaser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |