DE69224054D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69224054D1
DE69224054D1 DE69224054T DE69224054T DE69224054D1 DE 69224054 D1 DE69224054 D1 DE 69224054D1 DE 69224054 T DE69224054 T DE 69224054T DE 69224054 T DE69224054 T DE 69224054T DE 69224054 D1 DE69224054 D1 DE 69224054D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69224054T
Other languages
English (en)
Other versions
DE69224054T2 (de
Inventor
Hiroyuki Okuyama
Katsuhiro Akimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3225392A external-priority patent/JP3398966B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69224054D1 publication Critical patent/DE69224054D1/de
Publication of DE69224054T2 publication Critical patent/DE69224054T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69224054T 1992-02-19 1992-11-27 Halbleiterlaser Expired - Fee Related DE69224054T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3225392A JP3398966B2 (ja) 1991-02-21 1992-02-19 半導体発光素子

Publications (2)

Publication Number Publication Date
DE69224054D1 true DE69224054D1 (de) 1998-02-19
DE69224054T2 DE69224054T2 (de) 1998-08-20

Family

ID=12353856

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224054T Expired - Fee Related DE69224054T2 (de) 1992-02-19 1992-11-27 Halbleiterlaser

Country Status (4)

Country Link
EP (1) EP0556461B1 (de)
KR (1) KR100246610B1 (de)
DE (1) DE69224054T2 (de)
SG (1) SG77568A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818168A (ja) * 1994-04-28 1996-01-19 Sony Corp Ｉｉ−ｖｉ族化合物半導体発光素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
DE19542241C2 (de) 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
ATE210413T1 (de) * 1995-12-22 2001-12-15 Heraeus Kulzer Gmbh & Co Kg Verfahren zum betreiben eines bestrahlungsgerät zur aushärtung von kunststoffen
US5818859A (en) * 1996-06-27 1998-10-06 Minnesota Mining And Manufacturing Company Be-containing II-VI blue-green laser diodes
US6090637A (en) 1997-02-13 2000-07-18 3M Innovative Properties Company Fabrication of II-VI semiconductor device with BeTe buffer layer
US5767534A (en) * 1997-02-24 1998-06-16 Minnesota Mining And Manufacturing Company Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
NO20041523L (no) * 2003-09-19 2005-03-21 Sumitomo Electric Industries Lysemitterende halvlederelement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01169985A (ja) * 1987-12-24 1989-07-05 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
EP0356059B1 (de) * 1988-08-15 2000-01-26 Gertrude F. Neumark Dotierungsverfahren für Halbleiterkristalle mit grosser Bandlücke

Also Published As

Publication number Publication date
DE69224054T2 (de) 1998-08-20
KR930018791A (ko) 1993-09-22
EP0556461A2 (de) 1993-08-25
KR100246610B1 (ko) 2000-03-15
EP0556461B1 (de) 1998-01-14
SG77568A1 (en) 2001-01-16
EP0556461A3 (en) 1993-12-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee