DE69312836D1 - Vielfachhalbleiterlaser - Google Patents

Vielfachhalbleiterlaser

Info

Publication number
DE69312836D1
DE69312836D1 DE69312836T DE69312836T DE69312836D1 DE 69312836 D1 DE69312836 D1 DE 69312836D1 DE 69312836 T DE69312836 T DE 69312836T DE 69312836 T DE69312836 T DE 69312836T DE 69312836 D1 DE69312836 D1 DE 69312836D1
Authority
DE
Germany
Prior art keywords
semiconductor lasers
multiple semiconductor
lasers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69312836T
Other languages
English (en)
Other versions
DE69312836T2 (de
Inventor
Kimio Shigihara
Hitoshi Watanabe
Tomoko Kadowaki
Harumi Nishiguchi
Kunihiko Isshiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69312836D1 publication Critical patent/DE69312836D1/de
Application granted granted Critical
Publication of DE69312836T2 publication Critical patent/DE69312836T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
DE69312836T 1992-09-28 1993-03-23 Vielfachhalbleiterlaser Expired - Fee Related DE69312836T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28406492A JP2863678B2 (ja) 1992-09-28 1992-09-28 半導体レーザ装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69312836D1 true DE69312836D1 (de) 1997-09-11
DE69312836T2 DE69312836T2 (de) 1998-01-15

Family

ID=17673829

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69312836T Expired - Fee Related DE69312836T2 (de) 1992-09-28 1993-03-23 Vielfachhalbleiterlaser

Country Status (3)

Country Link
EP (1) EP0590232B1 (de)
JP (1) JP2863678B2 (de)
DE (1) DE69312836T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19651528B4 (de) * 1996-12-11 2005-10-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Chipanordnung und Verfahren zum Herstellen derselben
JPH10200208A (ja) 1997-01-09 1998-07-31 Nec Corp 半導体レーザーモジュール
DE19821544A1 (de) * 1998-05-14 1999-12-16 Jenoptik Jena Gmbh Diodenlaserbauelement und Verfahren zu dessen Herstellung
JP2004328011A (ja) * 1998-12-22 2004-11-18 Sony Corp 半導体発光装置の製造方法
US6348358B1 (en) * 1999-02-19 2002-02-19 Presstek, Inc. Emitter array with individually addressable laser diodes
DE10011892A1 (de) * 2000-03-03 2001-09-20 Jenoptik Jena Gmbh Montagesubstrat und Wärmesenke für Hochleistungsdiodenlaserbarren
DE10015962C2 (de) * 2000-03-30 2002-04-04 Infineon Technologies Ag Hochtemperaturfeste Lotverbindung für Halbleiterbauelement
DE10061265A1 (de) 2000-12-06 2002-06-27 Jenoptik Jena Gmbh Diodenlaseranordnung
JP4935366B2 (ja) * 2001-02-14 2012-05-23 富士ゼロックス株式会社 レーザ光源
JP2003158330A (ja) * 2001-11-21 2003-05-30 Opnext Japan Inc 半導体レーザ結合装置
DE60320613T2 (de) 2002-03-29 2009-06-10 Panasonic Corp., Kadoma Optische Vorrichtung und deren Herstellungsverfahren, optisches Modul, und optisches Transmissionssystem
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
JP4575147B2 (ja) * 2004-12-28 2010-11-04 株式会社東芝 半導体装置
JP2007180163A (ja) * 2005-12-27 2007-07-12 Samsung Electronics Co Ltd 発光デバイスモジュール
JP4967851B2 (ja) * 2007-06-26 2012-07-04 セイコーエプソン株式会社 光源装置、プロジェクタ、モニタ装置
KR100982986B1 (ko) * 2008-04-17 2010-09-17 삼성엘이디 주식회사 서브마운트, 발광다이오드 패키지 및 그 제조방법
KR100969146B1 (ko) * 2009-02-18 2010-07-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN101841127B (zh) * 2010-06-11 2012-05-09 西安炬光科技有限公司 一种可替换芯片的水平阵列大功率半导体激光器
JP2013162054A (ja) * 2012-02-08 2013-08-19 Ushio Inc 半導体装置
JP2013211303A (ja) * 2012-03-30 2013-10-10 Ushio Inc 半導体レーザ装置
EP2999062B1 (de) * 2013-05-13 2021-11-10 Mitsubishi Electric Corporation Halbleiter-laservorrichtung
JP6156510B2 (ja) 2013-11-01 2017-07-05 三菱電機株式会社 半導体レーザ光源
DE102014000510B4 (de) * 2014-01-20 2018-10-25 Jenoptik Laser Gmbh Halbleiterlaser mit anisotroper Wärmeableitung
US9812375B2 (en) * 2015-02-05 2017-11-07 Ii-Vi Incorporated Composite substrate with alternating pattern of diamond and metal or metal alloy
US9728934B2 (en) * 2015-08-31 2017-08-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Back-side-emitting vertical cavity surface emitting laser (VCSEL) wafer bonded to a heat-dissipation wafer, devices and methods
US10230212B1 (en) * 2017-12-22 2019-03-12 Cisco Technology, Inc. Method and apparatus to prevent laser kink failures
TWI662724B (zh) * 2018-06-06 2019-06-11 海華科技股份有限公司 覆晶式發光模組
CN109686707A (zh) * 2019-01-28 2019-04-26 南通大学 高散热硅基封装基板、制作方法及高散热封装结构
CN116706692B (zh) * 2023-07-31 2023-11-14 北京凯普林光电科技股份有限公司 线阵半导体激光器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069463A (en) * 1976-09-02 1978-01-17 International Business Machines Corporation Injection laser array
JPS58102590A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 光半導体装置
JPS606091B2 (ja) * 1983-11-11 1985-02-15 双葉電子工業株式会社 半導体装置
JPS60175476A (ja) * 1984-02-22 1985-09-09 Toshiba Corp 集積化半導体装置の製造方法
US4870652A (en) * 1988-07-08 1989-09-26 Xerox Corporation Monolithic high density arrays of independently addressable semiconductor laser sources
JPH0719929B2 (ja) * 1989-03-28 1995-03-06 三菱電機株式会社 半導体レーザ装置
JP3097952U (ja) * 2003-05-21 2004-02-12 米盛　駒夫 歯間ブラシの補助具

Also Published As

Publication number Publication date
DE69312836T2 (de) 1998-01-15
EP0590232B1 (de) 1997-08-06
JP2863678B2 (ja) 1999-03-03
JPH06112596A (ja) 1994-04-22
EP0590232A1 (de) 1994-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee