DE69209045T2 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69209045T2
DE69209045T2 DE69209045T DE69209045T DE69209045T2 DE 69209045 T2 DE69209045 T2 DE 69209045T2 DE 69209045 T DE69209045 T DE 69209045T DE 69209045 T DE69209045 T DE 69209045T DE 69209045 T2 DE69209045 T2 DE 69209045T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209045T
Other languages
English (en)
Other versions
DE69209045D1 (de
Inventor
Satoshi Arimoto
Takashi Nishimura
Takashi Motoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69209045D1 publication Critical patent/DE69209045D1/de
Application granted granted Critical
Publication of DE69209045T2 publication Critical patent/DE69209045T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H01S5/2013—MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69209045T 1992-02-28 1992-07-28 Halbleiterlaser Expired - Fee Related DE69209045T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4079056A JPH05243676A (ja) 1992-02-28 1992-02-28 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69209045D1 DE69209045D1 (de) 1996-04-18
DE69209045T2 true DE69209045T2 (de) 1996-11-07

Family

ID=13679241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209045T Expired - Fee Related DE69209045T2 (de) 1992-02-28 1992-07-28 Halbleiterlaser

Country Status (4)

Country Link
US (1) US5272712A (de)
EP (2) EP0557638B1 (de)
JP (1) JPH05243676A (de)
DE (1) DE69209045T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3135960B2 (ja) * 1991-12-20 2001-02-19 シャープ株式会社 半導体レーザ装置
JPH0629621A (ja) * 1992-07-09 1994-02-04 Mitsubishi Electric Corp 半導体レーザ装置
US5600667A (en) * 1993-04-05 1997-02-04 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
JPH06334265A (ja) * 1993-05-19 1994-12-02 Mitsubishi Electric Corp 量子井戸型半導体レーザ
JPH0786678A (ja) * 1993-05-31 1995-03-31 Mitsubishi Electric Corp 半導体レーザ装置
US5583878A (en) * 1993-06-23 1996-12-10 The Furukawa Electric Co., Ltd. Semiconductor optical device
JPH0722696A (ja) * 1993-07-01 1995-01-24 Sanyo Electric Co Ltd 半導体レーザ素子
JPH07297498A (ja) * 1994-03-01 1995-11-10 Seiko Epson Corp 半導体レーザおよびこれを用いた光センシング装置
US5787104A (en) * 1995-01-19 1998-07-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
JPH08307003A (ja) * 1995-04-28 1996-11-22 Mitsubishi Electric Corp 半導体レーザ装置
EP0776535B1 (de) * 1995-06-16 2001-10-24 Uniphase Opto Holdings, Inc. Halbleiter-laserdiode und deren herstellungsverfahren
JPH11511908A (ja) * 1996-06-24 1999-10-12 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 放射−放出半導体ダイオード及びこのようなダイオードの製造方法
GB2344458B (en) * 1998-12-02 2000-12-27 Arima Optoelectronics Corp Light-emitting diodes
GB2344932A (en) * 1998-12-15 2000-06-21 Sharp Kk Semiconductor Laser with gamma and X electron barriers
AU2772001A (en) * 2000-01-07 2001-07-24 Lucent Technologies Inc. Electronic device having a barrier region including aluminum and a method of manufacture therefor
US7649921B2 (en) * 2002-05-08 2010-01-19 The Furukawa Electric Co., Ltd. Laser module
EP1683243A1 (de) * 2003-11-06 2006-07-26 Bookham Technology PLC Hochtemperatur-laserdiode
JP4948134B2 (ja) * 2006-11-22 2012-06-06 シャープ株式会社 窒化物半導体発光素子
DE102017113531A1 (de) * 2017-06-20 2018-12-20 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zum Betrieb des optoelektronischen Halbleiterchips

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0632340B2 (ja) * 1985-02-07 1994-04-27 日本電気株式会社 半導体発光素子
JPS62173790A (ja) * 1986-01-28 1987-07-30 Nec Corp 半導体レ−ザ
JPH0666519B2 (ja) * 1986-08-14 1994-08-24 東京工業大学長 超格子構造体
JPS647587A (en) * 1987-06-29 1989-01-11 Nec Corp Semiconductor laser
JPS6464284A (en) * 1987-09-03 1989-03-10 Mitsubishi Electric Corp Superlattice semiconductor laser
JPH01264286A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 半導体量子井戸レーザ
JPH02241884A (ja) * 1989-03-15 1990-09-26 Yasunori Nara ダンプキャタ
JPH0391270A (ja) * 1989-09-01 1991-04-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
US5202895A (en) * 1990-05-07 1993-04-13 Kabushiki Kaisha Toshiba Semiconductor device having an active layer made of ingaalp material
JPH0422185A (ja) * 1990-05-17 1992-01-27 Mitsubishi Electric Corp 半導体光素子
CA2055208C (en) * 1990-11-09 2000-07-04 Michinori Irikawa A quatum barrier semiconductor optical device
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser

Also Published As

Publication number Publication date
EP0557638A3 (en) 1993-11-10
EP0557638B1 (de) 1996-03-13
EP0606127A1 (de) 1994-07-13
EP0557638A2 (de) 1993-09-01
JPH05243676A (ja) 1993-09-21
DE69209045D1 (de) 1996-04-18
US5272712A (en) 1993-12-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee