DE69402115D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69402115D1
DE69402115D1 DE69402115T DE69402115T DE69402115D1 DE 69402115 D1 DE69402115 D1 DE 69402115D1 DE 69402115 T DE69402115 T DE 69402115T DE 69402115 T DE69402115 T DE 69402115T DE 69402115 D1 DE69402115 D1 DE 69402115D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69402115T
Other languages
English (en)
Other versions
DE69402115T2 (de
Inventor
Norikazu Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69402115D1 publication Critical patent/DE69402115D1/de
Publication of DE69402115T2 publication Critical patent/DE69402115T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69402115T 1993-06-18 1994-06-15 Halbleiterlaser Expired - Fee Related DE69402115T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14795793A JP3453787B2 (ja) 1993-06-18 1993-06-18 半導体レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69402115D1 true DE69402115D1 (de) 1997-04-24
DE69402115T2 DE69402115T2 (de) 1997-11-13

Family

ID=15441912

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69402115T Expired - Fee Related DE69402115T2 (de) 1993-06-18 1994-06-15 Halbleiterlaser

Country Status (6)

Country Link
US (1) US5432810A (de)
EP (1) EP0630084B1 (de)
JP (1) JP3453787B2 (de)
KR (1) KR100277398B1 (de)
DE (1) DE69402115T2 (de)
TW (1) TW274646B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100303279B1 (ko) * 1994-08-27 2001-12-01 윤종용 반도체레이저다이오드와그제조방법
JP3193976B2 (ja) * 1996-03-27 2001-07-30 松下電器産業株式会社 高電圧ノイズフィルタ及びマグネトロン装置
US5732103A (en) * 1996-12-09 1998-03-24 Motorola, Inc. Long wavelength VCSEL
JP2006012899A (ja) * 2004-06-22 2006-01-12 Sharp Corp 半導体レーザ素子および半導体レーザ素子の製造方法
DE102018123019A1 (de) * 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4955031A (en) * 1988-07-12 1990-09-04 University Of Connecticut Metal insulator semiconductor heterostructure lasers
US5029175A (en) * 1988-12-08 1991-07-02 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
JPH03237785A (ja) * 1990-02-15 1991-10-23 Omron Corp 半導体発光素子およびその製造方法
RU2127478C1 (ru) * 1991-05-15 1999-03-10 Миннесота Майнинг Энд Мэнюфекчуринг Компани Сине-зеленый лазерный диод
JPH05275803A (ja) * 1992-03-27 1993-10-22 Tdk Corp 半導体レーザ
JPH0621572A (ja) * 1992-07-02 1994-01-28 Nec Corp 半導体レーザ

Also Published As

Publication number Publication date
EP0630084B1 (de) 1997-03-19
DE69402115T2 (de) 1997-11-13
KR100277398B1 (ko) 2001-02-01
JPH077220A (ja) 1995-01-10
JP3453787B2 (ja) 2003-10-06
TW274646B (de) 1996-04-21
US5432810A (en) 1995-07-11
EP0630084A1 (de) 1994-12-21

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee