DE69411364D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69411364D1
DE69411364D1 DE69411364T DE69411364T DE69411364D1 DE 69411364 D1 DE69411364 D1 DE 69411364D1 DE 69411364 T DE69411364 T DE 69411364T DE 69411364 T DE69411364 T DE 69411364T DE 69411364 D1 DE69411364 D1 DE 69411364D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69411364T
Other languages
English (en)
Other versions
DE69411364T2 (de
Inventor
Kentaro Tada
Hiroyuki Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69411364D1 publication Critical patent/DE69411364D1/de
Publication of DE69411364T2 publication Critical patent/DE69411364T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69411364T 1993-12-28 1994-12-27 Halbleiterlaser Expired - Fee Related DE69411364T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33394093 1993-12-28
JP6050830A JPH07235732A (ja) 1993-12-28 1994-03-22 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69411364D1 true DE69411364D1 (de) 1998-08-06
DE69411364T2 DE69411364T2 (de) 1999-03-04

Family

ID=26391306

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69411364T Expired - Fee Related DE69411364T2 (de) 1993-12-28 1994-12-27 Halbleiterlaser

Country Status (4)

Country Link
US (1) US5636236A (de)
EP (1) EP0661782B1 (de)
JP (1) JPH07235732A (de)
DE (1) DE69411364T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970055001A (ko) * 1995-12-22 1997-07-31 양승택 조화 수동 모드 록킹의 반도체 레이저
JP3429407B2 (ja) * 1996-01-19 2003-07-22 シャープ株式会社 半導体レーザ装置およびその製造方法
US6072818A (en) * 1996-03-28 2000-06-06 Fuji Photo Film Co., Ltd. Semiconductor light emission device
EP0908988A3 (de) 1997-10-06 2001-10-17 Sharp Kabushiki Kaisha Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US6504171B1 (en) 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
TW536859B (en) 2001-03-28 2003-06-11 Nichia Corp Nitride semiconductor device
JP2003031902A (ja) * 2001-07-16 2003-01-31 Denso Corp 半導体レーザ
ATE387736T1 (de) 2001-11-05 2008-03-15 Nichia Corp Halbleiterelement
JP4571372B2 (ja) * 2002-11-27 2010-10-27 ローム株式会社 半導体発光素子
JP2004296634A (ja) * 2003-03-26 2004-10-21 Sharp Corp 半導体レーザ装置および光ディスク装置
JP4284103B2 (ja) * 2003-05-08 2009-06-24 シャープ株式会社 酸化物半導体発光素子
US7577172B2 (en) * 2005-06-01 2009-08-18 Agilent Technologies, Inc. Active region of a light emitting device optimized for increased modulation speed operation
JP4696749B2 (ja) * 2005-07-25 2011-06-08 住友電気工業株式会社 半導体発光素子
JP2007110090A (ja) 2005-09-13 2007-04-26 Sony Corp ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
KR100649749B1 (ko) * 2005-10-25 2006-11-27 삼성전기주식회사 질화물 반도체 발광 소자
DE102007062050B4 (de) * 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
JP2009124008A (ja) * 2007-11-16 2009-06-04 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
KR100887050B1 (ko) 2007-12-06 2009-03-04 삼성전기주식회사 질화물 반도체 소자
JP2009152552A (ja) * 2007-12-18 2009-07-09 Seoul Opto Devices Co Ltd 多重量子井戸構造の活性領域を有する発光ダイオード
JP5198972B2 (ja) * 2008-08-11 2013-05-15 スタンレー電気株式会社 半導体発光装置及びその製造方法
KR101018217B1 (ko) * 2008-10-01 2011-02-28 삼성엘이디 주식회사 질화물 반도체 소자
JP5521068B1 (ja) * 2013-01-30 2014-06-11 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子
DE102013104351B4 (de) * 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
DE102013107969B4 (de) 2013-07-25 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102014117611A1 (de) 2014-12-01 2016-06-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP6392960B1 (ja) 2017-09-12 2018-09-19 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
JP2019054236A (ja) * 2018-08-23 2019-04-04 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286782A (ja) * 1985-10-11 1987-04-21 Nec Corp 量子井戸レ−ザ
DE3850139T2 (de) * 1987-02-27 1994-10-06 Canon Kk Halbleiterlaser mit variabler Oszillationswellenlänge.
GB2212325B (en) * 1987-11-13 1990-10-03 Plessey Co Plc Solid state light source
US4839899A (en) * 1988-03-09 1989-06-13 Xerox Corporation Wavelength tuning of multiple quantum well (MQW) heterostructure lasers
JPH02192785A (ja) * 1989-01-20 1990-07-30 Fujitsu Ltd 半導体発光装置
JPH03214683A (ja) * 1990-01-19 1991-09-19 Hitachi Ltd 波長可変半導体レーザ
JPH05102604A (ja) * 1991-10-11 1993-04-23 Fuji Xerox Co Ltd 半導体レーザ装置
JP3046454B2 (ja) * 1992-05-29 2000-05-29 株式会社東芝 量子井戸型半導体発光素子
JPH06164069A (ja) * 1992-11-25 1994-06-10 Fujitsu Ltd 半導体レーザ
JPH06286782A (ja) * 1993-02-05 1994-10-11 Inoac Corp 集積回路用ケース
FR2702602B1 (fr) * 1993-03-12 1995-06-09 Deveaud Pledran Benoit Structure laser à semi-conducteur à double hétérostructure et procédé de réalisation.
JPH07162084A (ja) * 1993-12-09 1995-06-23 Fujikura Ltd 半導体レーザの量子井戸構造

Also Published As

Publication number Publication date
US5636236A (en) 1997-06-03
DE69411364T2 (de) 1999-03-04
EP0661782B1 (de) 1998-07-01
JPH07235732A (ja) 1995-09-05
EP0661782A1 (de) 1995-07-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee