DE69305928T2 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69305928T2
DE69305928T2 DE69305928T DE69305928T DE69305928T2 DE 69305928 T2 DE69305928 T2 DE 69305928T2 DE 69305928 T DE69305928 T DE 69305928T DE 69305928 T DE69305928 T DE 69305928T DE 69305928 T2 DE69305928 T2 DE 69305928T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69305928T
Other languages
English (en)
Other versions
DE69305928D1 (de
Inventor
Akinori Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Application granted granted Critical
Publication of DE69305928D1 publication Critical patent/DE69305928D1/de
Publication of DE69305928T2 publication Critical patent/DE69305928T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
DE69305928T 1992-07-20 1993-07-19 Halbleiterlaser Expired - Fee Related DE69305928T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21558092 1992-07-20
JP4356021A JPH0690063A (ja) 1992-07-20 1992-12-18 半導体レーザー

Publications (2)

Publication Number Publication Date
DE69305928D1 DE69305928D1 (de) 1996-12-19
DE69305928T2 true DE69305928T2 (de) 1997-03-27

Family

ID=26520942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69305928T Expired - Fee Related DE69305928T2 (de) 1992-07-20 1993-07-19 Halbleiterlaser

Country Status (4)

Country Link
US (1) US5365536A (de)
EP (1) EP0580104B1 (de)
JP (1) JPH0690063A (de)
DE (1) DE69305928T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2973794B2 (ja) * 1993-09-24 1999-11-08 トヨタ自動車株式会社 半導体レーザー
US5892784A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate
US5892787A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
JPH08139412A (ja) * 1994-11-07 1996-05-31 Mitsubishi Electric Corp 半導体レーザ装置
JPH0974243A (ja) * 1995-09-04 1997-03-18 Mitsubishi Electric Corp 半導体レーザ
JP3444703B2 (ja) * 1995-09-07 2003-09-08 三菱電機株式会社 半導体レーザ
FR2761537B1 (fr) * 1997-04-01 1999-06-11 Thomson Csf Laser comprenant un empilement de diodes laser epitaxiees compris entre deux miroirs de bragg
FR2770695B1 (fr) * 1997-11-05 2000-03-24 Thomson Csf Laser a rubans et procede de fabrication
DE19935998B4 (de) * 1999-07-30 2007-10-18 Osram Opto Semiconductors Gmbh Mehrfach-Halbleiterlaserstruktur mit schmaler Wellenlängenverteilung
DE19952712A1 (de) * 1999-11-02 2001-05-10 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
DE19954093A1 (de) * 1999-11-10 2001-05-23 Infineon Technologies Ag Anordnung für Hochleistungslaser
US6526082B1 (en) * 2000-06-02 2003-02-25 Lumileds Lighting U.S., Llc P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
DE10057698A1 (de) * 2000-11-21 2002-06-06 Osram Opto Semiconductors Gmbh Übereinander gestapelte Halbleiter-Diodenlaser
US6724013B2 (en) * 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
US7746911B2 (en) * 2004-06-25 2010-06-29 Finisar Corporation Geometric optimizations for reducing spontaneous emissions in photodiodes
US7184454B2 (en) * 2004-06-25 2007-02-27 Finisar Corporation Light emitting device with an integrated monitor photodiode
US7277463B2 (en) * 2004-12-30 2007-10-02 Finisar Corporation Integrated light emitting device and photodiode with ohmic contact
US20070029555A1 (en) * 2005-08-04 2007-02-08 Lester Steven D Edge-emitting LED light source
JP4827655B2 (ja) * 2006-08-11 2011-11-30 古河電気工業株式会社 半導体発光素子及びその製造方法
DE102006061532A1 (de) * 2006-09-28 2008-04-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit mehreren monolithisch integrierten Laserdioden
JP2010129750A (ja) * 2008-11-27 2010-06-10 Denso Corp 半導体レーザおよびその製造方法
JP5293314B2 (ja) * 2009-03-19 2013-09-18 株式会社デンソー 半導体レーザ構造
JP5666815B2 (ja) * 2010-03-16 2015-02-12 株式会社デンソー 半導体レーザ構造
JP5521678B2 (ja) * 2010-03-23 2014-06-18 富士通株式会社 半導体光波形整形装置
JP5792486B2 (ja) * 2011-03-18 2015-10-14 株式会社東芝 半導体発光素子および光結合装置
JP2022117120A (ja) 2021-01-29 2022-08-10 浜松ホトニクス株式会社 半導体レーザ素子及びレーザモジュール

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514715A (en) * 1967-06-29 1970-05-26 Rca Corp Multilayer,light-emitting semiconductor device
JPS59167083A (ja) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS61247084A (ja) * 1985-04-24 1986-11-04 Nec Corp 埋め込みヘテロ構造半導体レ−ザ
JP2579508B2 (ja) * 1987-12-26 1997-02-05 富士通株式会社 半導体装置
JPH0271574A (ja) * 1988-09-06 1990-03-12 Seiko Epson Corp 半導体レーザ及びその製造方法
US5016252A (en) * 1988-09-29 1991-05-14 Sanyo Electric Co., Ltd. Semiconductor laser device
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams

Also Published As

Publication number Publication date
DE69305928D1 (de) 1996-12-19
EP0580104A2 (de) 1994-01-26
JPH0690063A (ja) 1994-03-29
US5365536A (en) 1994-11-15
EP0580104A3 (de) 1994-02-09
EP0580104B1 (de) 1996-11-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee