DE69404942D1 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung

Info

Publication number
DE69404942D1
DE69404942D1 DE69404942T DE69404942T DE69404942D1 DE 69404942 D1 DE69404942 D1 DE 69404942D1 DE 69404942 T DE69404942 T DE 69404942T DE 69404942 T DE69404942 T DE 69404942T DE 69404942 D1 DE69404942 D1 DE 69404942D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404942T
Other languages
English (en)
Other versions
DE69404942T2 (de
Inventor
Haruki Kurihara
Hatsumi Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69404942D1 publication Critical patent/DE69404942D1/de
Publication of DE69404942T2 publication Critical patent/DE69404942T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69404942T 1993-10-20 1994-10-20 Halbleiterlaservorrichtung Expired - Fee Related DE69404942T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5262210A JP2809978B2 (ja) 1993-10-20 1993-10-20 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE69404942D1 true DE69404942D1 (de) 1997-09-18
DE69404942T2 DE69404942T2 (de) 1998-01-15

Family

ID=17372612

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404942T Expired - Fee Related DE69404942T2 (de) 1993-10-20 1994-10-20 Halbleiterlaservorrichtung

Country Status (4)

Country Link
US (1) US5495493A (de)
EP (1) EP0650235B1 (de)
JP (1) JP2809978B2 (de)
DE (1) DE69404942T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963573A (en) * 1997-08-25 1999-10-05 3M Innovative Properties Company Light absorbing layer for II-VI semiconductor light emitting devices
JPH1187850A (ja) * 1997-09-03 1999-03-30 Sharp Corp 窒化物系化合物半導体レーザ素子及びレーザ装置
JP2000323789A (ja) * 1999-05-11 2000-11-24 Nec Corp 窓型半導体レーザおよびその製造方法
DE19963807A1 (de) * 1999-12-30 2001-07-19 Osram Opto Semiconductors Gmbh Streifenlaserdiodenelement
JP5110395B2 (ja) 2009-01-22 2012-12-26 ソニー株式会社 半導体レーザ装置
EP3893478B1 (de) 2013-05-05 2024-06-12 Lantiq Beteiligungs-GmbH & Co. KG Timesharing für niederstrommodi

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6015158B2 (ja) * 1979-02-19 1985-04-17 松下電器産業株式会社 半導体レ−ザ装置
JPS5734380A (en) * 1980-08-08 1982-02-24 Nec Corp Semiconductor laser with surge voltage prevention circuit
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPS60115283A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 半導体レ−ザ装置
JPH0815228B2 (ja) * 1986-02-28 1996-02-14 株式会社東芝 半導体レ−ザ装置及びその製造方法
JP2647076B2 (ja) * 1986-02-28 1997-08-27 株式会社東芝 半導体レーザ装置及びその製造方法
JPH02283088A (ja) * 1989-04-24 1990-11-20 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2778178B2 (ja) * 1990-01-31 1998-07-23 日本電気株式会社 半導体レーザ
JP2685332B2 (ja) * 1990-05-14 1997-12-03 松下電子工業株式会社 半導体レーザ装置
US5144633A (en) * 1990-05-24 1992-09-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and manufacturing method thereof
JP3179511B2 (ja) * 1991-04-08 2001-06-25 株式会社日立製作所 半導体レーザ
JPH05145171A (ja) * 1991-11-19 1993-06-11 Fujitsu Ltd 半導体レーザ

Also Published As

Publication number Publication date
US5495493A (en) 1996-02-27
EP0650235A3 (en) 1995-05-03
EP0650235B1 (de) 1997-08-13
JPH07115245A (ja) 1995-05-02
JP2809978B2 (ja) 1998-10-15
EP0650235A2 (de) 1995-04-26
DE69404942T2 (de) 1998-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee