GB2212325B - Solid state light source - Google Patents

Solid state light source

Info

Publication number
GB2212325B
GB2212325B GB8726678A GB8726678A GB2212325B GB 2212325 B GB2212325 B GB 2212325B GB 8726678 A GB8726678 A GB 8726678A GB 8726678 A GB8726678 A GB 8726678A GB 2212325 B GB2212325 B GB 2212325B
Authority
GB
United Kingdom
Prior art keywords
light source
solid state
state light
solid
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8726678A
Other versions
GB2212325A (en
GB8726678D0 (en
Inventor
Richard Mark Ash
Andrew Carter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB8726678A priority Critical patent/GB2212325B/en
Publication of GB8726678D0 publication Critical patent/GB8726678D0/en
Publication of GB2212325A publication Critical patent/GB2212325A/en
Application granted granted Critical
Publication of GB2212325B publication Critical patent/GB2212325B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
GB8726678A 1987-11-13 1987-11-13 Solid state light source Expired - Fee Related GB2212325B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8726678A GB2212325B (en) 1987-11-13 1987-11-13 Solid state light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8726678A GB2212325B (en) 1987-11-13 1987-11-13 Solid state light source

Publications (3)

Publication Number Publication Date
GB8726678D0 GB8726678D0 (en) 1987-12-16
GB2212325A GB2212325A (en) 1989-07-19
GB2212325B true GB2212325B (en) 1990-10-03

Family

ID=10626945

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8726678A Expired - Fee Related GB2212325B (en) 1987-11-13 1987-11-13 Solid state light source

Country Status (1)

Country Link
GB (1) GB2212325B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2702602B1 (en) * 1993-03-12 1995-06-09 Deveaud Pledran Benoit Semiconductor laser structure with double heterostructure and production method.
JPH07235732A (en) * 1993-12-28 1995-09-05 Nec Corp Semiconductor laser
US5390209A (en) * 1994-01-05 1995-02-14 At&T Corp. Article comprising a semiconductor laser that is non-degenerate with regard to polarization
US5483547A (en) * 1994-05-10 1996-01-09 Northern Telecom Limited Semiconductor laser structure for improved stability of the threshold current with respect to changes in the ambient temperature
GB2363901A (en) * 2000-06-20 2002-01-09 Mitel Semiconductor Ab An optical emission device having quantum wells
TW525306B (en) * 2001-04-19 2003-03-21 Univ Nat Taiwan Technique using multi-layer quantum well of different widths for increasing the light emitting bandwidth of semiconductor photoelectric device
US7577172B2 (en) * 2005-06-01 2009-08-18 Agilent Technologies, Inc. Active region of a light emitting device optimized for increased modulation speed operation
DE102006025964A1 (en) * 2006-06-02 2007-12-06 Osram Opto Semiconductors Gmbh Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component
DE102013104351B4 (en) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Semiconductor layer sequence and method for operating an optoelectronic semiconductor chip

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4589115A (en) * 1983-09-09 1986-05-13 Xerox Corporation Wavelength tuning of quantum well heterostructure lasers using an external grating
US4599728A (en) * 1983-07-11 1986-07-08 At&T Bell Laboratories Multi-quantum well laser emitting at 1.5 μm

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599728A (en) * 1983-07-11 1986-07-08 At&T Bell Laboratories Multi-quantum well laser emitting at 1.5 μm
US4589115A (en) * 1983-09-09 1986-05-13 Xerox Corporation Wavelength tuning of quantum well heterostructure lasers using an external grating

Also Published As

Publication number Publication date
GB2212325A (en) 1989-07-19
GB8726678D0 (en) 1987-12-16

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19961113