DE69212938T2 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69212938T2
DE69212938T2 DE69212938T DE69212938T DE69212938T2 DE 69212938 T2 DE69212938 T2 DE 69212938T2 DE 69212938 T DE69212938 T DE 69212938T DE 69212938 T DE69212938 T DE 69212938T DE 69212938 T2 DE69212938 T2 DE 69212938T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69212938T
Other languages
English (en)
Other versions
DE69212938D1 (de
Inventor
Masaki Okajima
Koichi Nitta
Genichi Hatakoshi
Yukie Nishikawa
Kazuhiko Itaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69212938D1 publication Critical patent/DE69212938D1/de
Publication of DE69212938T2 publication Critical patent/DE69212938T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3218—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities specially strained cladding layers, other than for strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69212938T 1991-08-30 1992-06-02 Halbleiterlaser Expired - Fee Related DE69212938T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03220613A JP3129779B2 (ja) 1991-08-30 1991-08-30 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69212938D1 DE69212938D1 (de) 1996-09-26
DE69212938T2 true DE69212938T2 (de) 1997-02-13

Family

ID=16753720

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69212938T Expired - Fee Related DE69212938T2 (de) 1991-08-30 1992-06-02 Halbleiterlaser

Country Status (4)

Country Link
US (1) US5282218A (de)
EP (1) EP0535307B1 (de)
JP (1) JP3129779B2 (de)
DE (1) DE69212938T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3135960B2 (ja) * 1991-12-20 2001-02-19 シャープ株式会社 半導体レーザ装置
US5506856A (en) * 1993-04-15 1996-04-09 Sharp Kabushiki Kaisha Semiconductor laser device having a resonator of particular length for reduced threshold current density
US5375135A (en) * 1992-04-15 1994-12-20 Sharp Kabushiki Kaisha Semiconductor laser device
CA2112319C (en) * 1992-12-28 1999-01-05 Ichiro Yoshida Semiconductor laser having an algainp cladding layer
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
US5379312A (en) * 1993-10-25 1995-01-03 Xerox Corporation Semiconductor laser with tensile-strained etch-stop layer
US5762706A (en) * 1993-11-09 1998-06-09 Fujitsu Limited Method of forming compound semiconductor device
JP2822868B2 (ja) * 1993-12-10 1998-11-11 日本電気株式会社 半導体レーザの製造方法
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
US5727012A (en) * 1996-03-07 1998-03-10 Lucent Technologies Inc. Heterostructure laser
JP3682336B2 (ja) * 1996-04-10 2005-08-10 三菱電機株式会社 半導体レーザ装置の製造方法
JPH1075012A (ja) * 1996-06-27 1998-03-17 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
JPH1187831A (ja) * 1997-09-02 1999-03-30 Sony Corp 半導体発光素子、光ピックアップ装置ならびに光記録および／または再生装置
US5923689A (en) * 1998-01-22 1999-07-13 National Science Council Red semiconductor laser of low beam divergence
JP4839497B2 (ja) * 2000-02-29 2011-12-21 ソニー株式会社 半導体発光装置及び半導体発光装置の製造方法
JP3763459B2 (ja) * 2001-06-26 2006-04-05 シャープ株式会社 半導体レーザ素子及びその製造方法
JP2003086886A (ja) * 2001-07-02 2003-03-20 Sharp Corp 半導体レーザ装置およびその製造方法
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
US7116692B2 (en) * 2001-12-11 2006-10-03 Rohm Co., Ltd. Semiconductor laser and method of producing the same
JP2004111923A (ja) * 2002-08-22 2004-04-08 Osram Opto Semiconductors Gmbh ビーム放射性半導体構成素子
JP4867137B2 (ja) 2004-05-31 2012-02-01 住友化学株式会社 化合物半導体エピタキシャル基板
US9770297B2 (en) * 2008-06-04 2017-09-26 Covidien Lp Energy devices and methods for treating hollow anatomical structures
JP5684501B2 (ja) 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2724827B2 (ja) * 1987-07-02 1998-03-09 国際電信電話株式会社 赤外発光素子
DE68918884T2 (de) * 1988-03-14 1995-03-16 Toshiba Kawasaki Kk Halbleiterlaser-Vorrichtung.
US5016252A (en) * 1988-09-29 1991-05-14 Sanyo Electric Co., Ltd. Semiconductor laser device
JPH0321093A (ja) * 1989-06-19 1991-01-29 Fujitsu Ltd 半導体発光装置
ES2109231T3 (es) * 1989-10-31 1998-01-16 Furukawa Electric Co Ltd Elementos laser de semi-conductores y metodo de fabricacion.

Also Published As

Publication number Publication date
JP3129779B2 (ja) 2001-01-31
EP0535307B1 (de) 1996-08-21
JPH0563291A (ja) 1993-03-12
DE69212938D1 (de) 1996-09-26
EP0535307A2 (de) 1993-04-07
EP0535307A3 (en) 1993-07-28
US5282218A (en) 1994-01-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee