KR970055001A - 조화 수동 모드 록킹의 반도체 레이저 - Google Patents

조화 수동 모드 록킹의 반도체 레이저 Download PDF

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KR970055001A
KR970055001A KR1019950054541A KR19950054541A KR970055001A KR 970055001 A KR970055001 A KR 970055001A KR 1019950054541 A KR1019950054541 A KR 1019950054541A KR 19950054541 A KR19950054541 A KR 19950054541A KR 970055001 A KR970055001 A KR 970055001A
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cycles
semiconductor laser
quantum well
order
mode locking
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KR1019950054541A
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이규석
안준태
이일항
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양승택
한국전자통신연구원
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Priority to KR1019950054541A priority Critical patent/KR970055001A/ko
Priority to US08/708,686 priority patent/US5790579A/en
Publication of KR970055001A publication Critical patent/KR970055001A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H01S5/1218—Multiplicity of periods in superstructured configuration, e.g. more than one period in an alternate sequence
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

본 발명은 수동모드록킹 방식의 반도체 레이저에 관한 것으로 특히, 수배 기가 로부터 수 테라 헤르치 급에 이르는 반복률을 갖는 펄스열을 생성하기 위하여 고안된 반도체 양자우물 구조를 포함하는 반도체 레이저에 관한 것이다.
본 발명은, 이득구간의 양자우물층이 위쪽(또는 아래쪽)으로부터 순서대로 상온에서의 자동방출 스펙트럼의 피크파장이 각각-2,+,+2,,-(단,는 발진되는 펄스 레이저의 평균 파장)이 되도록 결정된 5개의 양자우물층으로 구성되고, 상기 초격회절판(SSG) 분배브락반사경(DBR)이 5개의 샘플링 구간으로 이루어지며, 각 샘플링 구간은 (-2)/(2n), (-)/(2n),/(2n), (+)/2n, (+2

Description

조화 수동 모드 록킹의 반도체 레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 이득구간의 양자우물 구조도.

Claims (3)

  1. 포화흡수자, 이득구간, 위상정렬구간, 및 초격회절판 구조의 분배브락반사경으로 구성된 펄스 반도체 레이저에 있어서: 상기 이득구간의 양자우물층은 위쪽으로부터 순서대로 상온에서의 자동방출 스펙트럼의 피크파장이 각각-2,+,+2,,-(단,는 발진되는 펄스 레이저의 평균 파장)이 되도록 결정된 5개의 양자우물층으로 구성되고, 상기 초격회절판(SSG) 분배브락반사경(DBR)이 5개의 샘플링 구간으로 이루어지며, 각 샘플링 구간은 (-2)/(2n), (-)/(2n),/(2n), (+)/2n, (+2)/(2n)(단, n은 상기 초격회절판 분배브락반사경의 유효위상 굴절계수)간격의 5종의 다른 회절 피치가 각각 25주기, 5주기, 25주기, 5주기, 25주기의 두께로 순서대로 배열된 것을 특징으로 하는 수동모드록킹 방식의 반도체 레이저.
  2. 제1항에 있어서, 상기는 12nm내의 고정된 값인 것을 특징으로 하는 수동모드록킹 방식의 반도체 레이저.
  3. 포화흡수자, 이득구간, 위상정렬구간, 및 초격회절판 구조의 분배브락반사경으로 구성된 펄스 반도체 레이저에 있어서: 상기 이득구간의 양자우물층은 아래로부터 순서대로 상온에서의 자동방출 스펙트럼의 피크파장이 각각-2,+,+2,,-(단,는 발진되는 펄스 레이저의 평균 파장)이 되도록 결정된 5개의 양자우물층으로 구성되고, 상기 초격회절판(SSG) 분배브락반사경(DBR)이 5개의 샘플링 구간으로 이루어지며, 각 샘플링 구간은 (-2)/(2n), (-)/(2n),/(2n), (+)/2n, (+2)/(2n)(단, n은 상기 초격회절판 분배브락반사경의 유효위상 굴절계수)간격의 5종의 다른 회절 피치가 각각 25주기, 5주기, 25주기, 5주기, 25주기의 두께로 순서대로 배열된 것을 특징으로 하는 수동모드록킹 방식의 반도체 레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950054541A 1995-12-22 1995-12-22 조화 수동 모드 록킹의 반도체 레이저 KR970055001A (ko)

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Application Number Priority Date Filing Date Title
KR1019950054541A KR970055001A (ko) 1995-12-22 1995-12-22 조화 수동 모드 록킹의 반도체 레이저
US08/708,686 US5790579A (en) 1995-12-22 1996-09-05 Semiconductor laser device for pulse laser oscillation

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KR1019950054541A KR970055001A (ko) 1995-12-22 1995-12-22 조화 수동 모드 록킹의 반도체 레이저

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US6580734B1 (en) 1999-07-07 2003-06-17 Cyoptics Ltd. Laser wavelength stabilization
EP1130709A2 (en) 2000-01-20 2001-09-05 Cyoptics (Israel) Ltd. Monitoring of optical radiation in semiconductor devices
GB2369491A (en) * 2000-11-28 2002-05-29 Kamelian Ltd Tunable semiconductor laser
US6816518B2 (en) * 2001-03-20 2004-11-09 Cyoptics (Israel) Ltd. Wavelength tunable high repetition rate optical pulse generator
US6862136B2 (en) 2002-01-31 2005-03-01 Cyoptics Ltd. Hybrid optical transmitter with electroabsorption modulator and semiconductor optical amplifier
GB0523522D0 (en) * 2005-11-18 2005-12-28 Sosabowski Jeremy Optical comb frequency source
US9543731B2 (en) * 2015-03-17 2017-01-10 Technische Universität Berlin Method and device for generating short optical pulses
US10615574B2 (en) * 2018-05-17 2020-04-07 Wisconsin Alumni Research Foundation Superlattice heterostructures formed with single crystalline semiconductor nanomembranes and amorphous tunneling barrier layers

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US5640409A (en) * 1993-07-02 1997-06-17 Sony Corporation Semiconductor laser
JPH07235732A (ja) * 1993-12-28 1995-09-05 Nec Corp 半導体レーザ
FR2716303B1 (fr) * 1994-02-11 1996-04-05 Franck Delorme Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement.
KR0138860B1 (ko) * 1994-12-09 1998-06-01 양승택 초격 회절판 구조의 분배 브락 반사경을 갖는 반도체 레이저
JPH08255954A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 半導体レーザの構造及びその製造方法

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