DE69208622T2 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung

Info

Publication number
DE69208622T2
DE69208622T2 DE69208622T DE69208622T DE69208622T2 DE 69208622 T2 DE69208622 T2 DE 69208622T2 DE 69208622 T DE69208622 T DE 69208622T DE 69208622 T DE69208622 T DE 69208622T DE 69208622 T2 DE69208622 T2 DE 69208622T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69208622T
Other languages
English (en)
Other versions
DE69208622D1 (de
Inventor
Yasuo Kan
Kosei Takahashi
Masahiro Hosoda
Atsuo Tsunoda
Kentaro Tani
Masanori Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69208622D1 publication Critical patent/DE69208622D1/de
Application granted granted Critical
Publication of DE69208622T2 publication Critical patent/DE69208622T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69208622T 1991-12-20 1992-09-29 Halbleiterlaservorrichtung Expired - Fee Related DE69208622T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03338806A JP3135960B2 (ja) 1991-12-20 1991-12-20 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69208622D1 DE69208622D1 (de) 1996-04-04
DE69208622T2 true DE69208622T2 (de) 1996-08-08

Family

ID=18321645

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69208622T Expired - Fee Related DE69208622T2 (de) 1991-12-20 1992-09-29 Halbleiterlaservorrichtung

Country Status (4)

Country Link
US (1) US5337326A (de)
EP (1) EP0549103B1 (de)
JP (1) JP3135960B2 (de)
DE (1) DE69208622T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739543A (en) * 1993-11-24 1998-04-14 The Furukawa Electric Co., Ltd. Optical semiconductive device with inplanar compressive strain
JPH07335934A (ja) * 1994-06-03 1995-12-22 Mitsubishi Electric Corp 光半導体素子，及びその製造方法
JPH07335981A (ja) * 1994-06-07 1995-12-22 Mitsubishi Electric Corp 半導体発光素子，レーザアンプ，及び増幅機能を有する波長可変フィルタ
JP3691544B2 (ja) * 1995-04-28 2005-09-07 アジレント・テクノロジーズ・インク 面発光レーザの製造方法
WO1997000546A2 (en) * 1995-06-16 1997-01-03 Philips Electronics N.V. Semiconductor diode laser and method of manufacturing same
GB2344932A (en) * 1998-12-15 2000-06-21 Sharp Kk Semiconductor Laser with gamma and X electron barriers
GB2346735B (en) * 1999-02-13 2004-03-31 Sharp Kk A semiconductor laser device
US20170324219A1 (en) * 2016-05-05 2017-11-09 Macom Technology Solutions Holdings, Inc. Semiconductor laser incorporating an electron barrier with low aluminum content
US20180269658A1 (en) * 2016-05-05 2018-09-20 Macom Technology Solutions Holdings, Inc. Semiconductor laser incorporating an electron barrier with low aluminum content
US10141477B1 (en) 2017-07-28 2018-11-27 Lumileds Llc Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
US11322650B2 (en) 2017-07-28 2022-05-03 Lumileds Llc Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
CN111108614B (zh) * 2017-07-28 2024-02-06 亮锐有限责任公司 用于发光器件中高效电子和空穴阻挡的应力algainp层

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508244A1 (fr) * 1981-06-19 1982-12-24 Thomson Csf Laser a semi-conducteur a courte longueur d'onde
JPS617674A (ja) * 1984-06-22 1986-01-14 Nec Corp ３／５族化合物半導体発光素子
US4804639A (en) * 1986-04-18 1989-02-14 Bell Communications Research, Inc. Method of making a DH laser with strained layers by MBE
JPS6348888A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS63197391A (ja) * 1987-02-12 1988-08-16 Hitachi Ltd 半導体レ−ザ装置
JPH0248965U (de) * 1988-09-30 1990-04-05
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
US5202895A (en) * 1990-05-07 1993-04-13 Kabushiki Kaisha Toshiba Semiconductor device having an active layer made of ingaalp material
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
JP2669139B2 (ja) * 1990-10-24 1997-10-27 日本電気株式会社 半導体レーザ
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
JPH0513809A (ja) * 1991-07-03 1993-01-22 Nec Corp 半導体発光素子
JP3129779B2 (ja) * 1991-08-30 2001-01-31 株式会社東芝 半導体レーザ装置
JPH05243676A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 半導体レーザ装置

Also Published As

Publication number Publication date
US5337326A (en) 1994-08-09
EP0549103A1 (de) 1993-06-30
DE69208622D1 (de) 1996-04-04
JP3135960B2 (ja) 2001-02-19
EP0549103B1 (de) 1996-02-28
JPH05175594A (ja) 1993-07-13

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee