DE69116743T2 - Phasenverschobener Halbleiterlaser mit verteilter Rückkoppelung - Google Patents

Phasenverschobener Halbleiterlaser mit verteilter Rückkoppelung

Info

Publication number
DE69116743T2
DE69116743T2 DE69116743T DE69116743T DE69116743T2 DE 69116743 T2 DE69116743 T2 DE 69116743T2 DE 69116743 T DE69116743 T DE 69116743T DE 69116743 T DE69116743 T DE 69116743T DE 69116743 T2 DE69116743 T2 DE 69116743T2
Authority
DE
Germany
Prior art keywords
phase
semiconductor laser
distributed feedback
shifted semiconductor
shifted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69116743T
Other languages
English (en)
Other versions
DE69116743D1 (de
Inventor
Takayuki Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Publication of DE69116743D1 publication Critical patent/DE69116743D1/de
Application granted granted Critical
Publication of DE69116743T2 publication Critical patent/DE69116743T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
DE69116743T 1990-06-12 1991-06-12 Phasenverschobener Halbleiterlaser mit verteilter Rückkoppelung Expired - Lifetime DE69116743T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15153990 1990-06-12

Publications (2)

Publication Number Publication Date
DE69116743D1 DE69116743D1 (de) 1996-03-14
DE69116743T2 true DE69116743T2 (de) 1996-07-11

Family

ID=15520726

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69116743T Expired - Lifetime DE69116743T2 (de) 1990-06-12 1991-06-12 Phasenverschobener Halbleiterlaser mit verteilter Rückkoppelung

Country Status (4)

Country Link
US (1) US5185759A (de)
EP (1) EP0461632B1 (de)
KR (1) KR960002293B1 (de)
DE (1) DE69116743T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
FR2686753B1 (fr) * 1992-01-24 1994-04-08 France Telecom Photorecepteur pour signaux optiques modules en frequence, emetteur-recepteur et liaison optique correspondants.
FR2690572B1 (fr) * 1992-04-24 1994-07-22 France Telecom Structure laser a retroaction repartie.
US5537432A (en) * 1993-01-07 1996-07-16 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
DE4322163A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Auf DFB- oder DBR-Gitter basierendes optoelektronisches Bauelement mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, mit axial beliebig verteilbarer und variierbarer Phasenverschiebung, sowie mit axial quasi-kontinuierlich variierbarem Gitter-Kopplungskoeffizienten
DE4322164A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Optoelektronisches Bauelement mit Rückkopplungsgitter, mit axial quasi-kontinuierlich und nahezu beliebig variierbarem Gitterkopplungs-Koeffizienten, mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, sowie mit axial nahezu beliebig verteilbarer und variierbarer Phasenverschiebung
GB2283858A (en) * 1993-11-12 1995-05-17 British Tech Group Semiconductor laser
DE4407832A1 (de) * 1994-03-09 1995-09-14 Ant Nachrichtentech Verfahren zur Herstellung eines optoelektronischen Bauelements mit einer definierten axialen Variation des Kopplungskoeffizienten und definierter axialer Verteilung der Phasenverschiebung
FR2719388B1 (fr) * 1994-05-02 1996-07-19 Frederic Ghirardi Dispositif semi-conducteur optoélectronique comportant un adaptateur de mode intégré.
JPH08255954A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 半導体レーザの構造及びその製造方法
JP3180725B2 (ja) * 1997-08-05 2001-06-25 日本電気株式会社 分布帰還型半導体レーザ
CN102377109B (zh) * 2011-11-11 2012-12-12 中国科学院半导体研究所 抑制空间烧孔效应的分布反馈激光器的制作方法
CN105102323B (zh) 2013-03-26 2018-04-03 空中客车德国运营有限责任公司 盥洗室单元
US10680409B2 (en) 2018-03-07 2020-06-09 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Laser device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046087A (ja) * 1983-08-24 1985-03-12 Nec Corp 分布ブラッグ反射型半導体レ−ザ
JPS6189690A (ja) * 1984-10-09 1986-05-07 Fujitsu Ltd 半導体レ−ザ
JPS61202487A (ja) * 1985-03-06 1986-09-08 Nippon Telegr & Teleph Corp <Ntt> 分布帰還型半導体レ−ザ
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
GB2195822B (en) * 1986-09-30 1990-01-24 Stc Plc Injection lasers
JPS63137496A (ja) * 1986-11-28 1988-06-09 Nec Corp 半導体レ−ザ装置
JPS63260185A (ja) * 1987-04-17 1988-10-27 Sony Corp 分布帰還形半導体レ−ザ
JP2768940B2 (ja) * 1987-07-08 1998-06-25 三菱電機株式会社 単一波長発振半導体レーザ装置

Also Published As

Publication number Publication date
DE69116743D1 (de) 1996-03-14
KR960002293B1 (ko) 1996-02-14
EP0461632A2 (de) 1991-12-18
US5185759A (en) 1993-02-09
KR920001790A (ko) 1992-01-30
EP0461632B1 (de) 1996-01-31
EP0461632A3 (en) 1992-04-01

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