DE3774797D1 - Halbleiterlaservorrichtung mit verteilter rueckkopplung. - Google Patents

Halbleiterlaservorrichtung mit verteilter rueckkopplung.

Info

Publication number
DE3774797D1
DE3774797D1 DE8787306183T DE3774797T DE3774797D1 DE 3774797 D1 DE3774797 D1 DE 3774797D1 DE 8787306183 T DE8787306183 T DE 8787306183T DE 3774797 T DE3774797 T DE 3774797T DE 3774797 D1 DE3774797 D1 DE 3774797D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
distributed feedback
feedback
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787306183T
Other languages
English (en)
Inventor
Shoji Hirata
Kazuo Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE3774797D1 publication Critical patent/DE3774797D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8787306183T 1986-07-28 1987-07-13 Halbleiterlaservorrichtung mit verteilter rueckkopplung. Expired - Lifetime DE3774797D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61177372A JP2513186B2 (ja) 1986-07-28 1986-07-28 分布帰還型半導体レ―ザの製造方法

Publications (1)

Publication Number Publication Date
DE3774797D1 true DE3774797D1 (de) 1992-01-09

Family

ID=16029801

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787306183T Expired - Lifetime DE3774797D1 (de) 1986-07-28 1987-07-13 Halbleiterlaservorrichtung mit verteilter rueckkopplung.

Country Status (5)

Country Link
US (1) US4807245A (de)
EP (1) EP0256664B1 (de)
JP (1) JP2513186B2 (de)
KR (1) KR950013057B1 (de)
DE (1) DE3774797D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
JPH07112094B2 (ja) * 1990-03-16 1995-11-29 株式会社東芝 半導体レーザ装置
TW388144B (en) 1997-09-30 2000-04-21 Mitsui Chemicals Inc Semiconductor laser device
JP2000012963A (ja) 1998-06-23 2000-01-14 Nec Corp 光半導体装置の製造方法
JP2002252420A (ja) * 2000-12-15 2002-09-06 Furukawa Electric Co Ltd:The 半導体レーザ素子、半導体レーザモジュールおよびその製造方法ならびに光ファイバ増幅器
EP1215782A3 (de) * 2000-12-15 2004-01-07 The Furukawa Electric Co., Ltd. Integriertes Modul für Synthese von Laserstrahlen für einen Halbleiterlasermodul und optischen Verstärker
JP6464895B2 (ja) * 2015-04-03 2019-02-06 住友電気工業株式会社 量子カスケード半導体レーザ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143595A (ja) * 1982-02-19 1983-08-26 Sanyo Electric Co Ltd 半導体レ−ザ
JPS595689A (ja) * 1982-07-01 1984-01-12 Nec Corp 分布帰還型半導体レ−ザ
JPS5980984A (ja) * 1982-11-01 1984-05-10 Hitachi Ltd 面発光分布帰還形半導体レ−ザ素子
JPS6037793A (ja) * 1983-08-10 1985-02-27 Nec Corp 単一軸モ−ド半導体レ−ザ
JPS6134988A (ja) * 1984-07-26 1986-02-19 Nec Corp 半導体レ−ザ
JPS61100991A (ja) * 1984-10-22 1986-05-19 Sharp Corp 半導体レ−ザ素子
US4624000A (en) * 1984-11-01 1986-11-18 Xerox Corporation Phased array semiconductor lasers with preferred emission in a single lobe
JPS61191093A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置

Also Published As

Publication number Publication date
KR880002301A (ko) 1988-04-30
US4807245A (en) 1989-02-21
EP0256664A1 (de) 1988-02-24
JP2513186B2 (ja) 1996-07-03
KR950013057B1 (ko) 1995-10-24
EP0256664B1 (de) 1991-11-27
JPS6333891A (ja) 1988-02-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee