DE3873398D1 - Phasenverschobener halbleiterlaser mit verteilter rueckkopplung. - Google Patents

Phasenverschobener halbleiterlaser mit verteilter rueckkopplung.

Info

Publication number
DE3873398D1
DE3873398D1 DE8888303709T DE3873398T DE3873398D1 DE 3873398 D1 DE3873398 D1 DE 3873398D1 DE 8888303709 T DE8888303709 T DE 8888303709T DE 3873398 T DE3873398 T DE 3873398T DE 3873398 D1 DE3873398 D1 DE 3873398D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
phase shifted
distributed feedback
shifted semiconductor
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888303709T
Other languages
English (en)
Other versions
DE3873398T2 (de
Inventor
Akira Sugimura
Tatsuya Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62104065A external-priority patent/JPS63269592A/ja
Priority claimed from JP63058012A external-priority patent/JP2563196B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3873398D1 publication Critical patent/DE3873398D1/de
Publication of DE3873398T2 publication Critical patent/DE3873398T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1246—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts plurality of phase shifts

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8888303709T 1987-04-27 1988-04-25 Phasenverschobener halbleiterlaser mit verteilter rueckkopplung. Expired - Lifetime DE3873398T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62104065A JPS63269592A (ja) 1987-04-27 1987-04-27 半導体レ−ザ
JP63058012A JP2563196B2 (ja) 1988-03-11 1988-03-11 結合分布帰還型半導体レーザ

Publications (2)

Publication Number Publication Date
DE3873398D1 true DE3873398D1 (de) 1992-09-10
DE3873398T2 DE3873398T2 (de) 1993-03-18

Family

ID=26399100

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888303709T Expired - Lifetime DE3873398T2 (de) 1987-04-27 1988-04-25 Phasenverschobener halbleiterlaser mit verteilter rueckkopplung.

Country Status (3)

Country Link
US (1) US4847856A (de)
EP (1) EP0289250B1 (de)
DE (1) DE3873398T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69033405T2 (de) * 1989-07-15 2000-07-20 Fujitsu Ltd., Kawasaki Abstimmbare Laserdiode mit verteilter Rückkoppelung
US5358898A (en) * 1989-07-15 1994-10-25 Fujitsu Limited Method of making a tunable laser diode having a distributed feedback structure
JP2553217B2 (ja) * 1990-04-19 1996-11-13 株式会社東芝 レーザ素子及びその製造方法
JP2689698B2 (ja) * 1990-07-19 1997-12-10 国際電信電話株式会社 αパラメータ符号を反転させた半導体素子
US5070509A (en) * 1990-08-09 1991-12-03 Eastman Kodak Company Surface emitting, low threshold (SELTH) laser diode
US5272714A (en) * 1991-12-12 1993-12-21 Wisconsin Alumni Research Foundation Distributed phase shift semiconductor laser
US5319659A (en) * 1992-05-14 1994-06-07 The United States Of America As Represented By The United States Department Of Energy Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching
DE4301830A1 (de) * 1993-01-23 1994-07-28 Ant Nachrichtentech 3-Sektions-DFB-Halbleiterlaser mit erweitertem Wellenlängen-Durchstimmungsbereich
JP2822988B2 (ja) * 1996-07-26 1998-11-11 日本電気株式会社 分布帰還型半導体レーザ
JP3180725B2 (ja) * 1997-08-05 2001-06-25 日本電気株式会社 分布帰還型半導体レーザ
US6415877B1 (en) 1998-07-15 2002-07-09 Deep Vision Llc Subsea wellbore drilling system for reducing bottom hole pressure
US6574261B2 (en) 1998-08-27 2003-06-03 Nec Corporation Distributed feedback semiconductor laser
JP3186705B2 (ja) * 1998-08-27 2001-07-11 日本電気株式会社 分布帰還型半導体レーザ
JP2002084033A (ja) * 2000-09-06 2002-03-22 Nec Corp 分布帰還型半導体レーザ
WO2002075867A2 (en) * 2001-03-19 2002-09-26 Bookham Technology Tuneable laser
GB2381123B (en) * 2001-10-17 2005-02-23 Marconi Optical Components Ltd Tuneable laser
US6638773B1 (en) 2002-05-31 2003-10-28 Applied Optoelectronics, Inc. Method for fabricating single-mode DBR laser with improved yield
US6608855B1 (en) 2002-05-31 2003-08-19 Applied Optoelectronics, Inc. Single-mode DBR laser with improved phase-shift section
CN107658694B (zh) * 2017-11-16 2020-01-03 太原理工大学 一种随机散射光反馈的InP基单片集成混沌半导体激光器芯片
CN112909525B (zh) * 2021-01-21 2022-10-11 中国电力科学研究院有限公司 无线电能传输系统无衍射微带线天线阵及其设计方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775980A (en) * 1983-12-14 1988-10-04 Hitachi, Ltd. Distributed-feedback semiconductor laser device
JPS6147685A (ja) * 1984-08-15 1986-03-08 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS61216383A (ja) * 1985-03-20 1986-09-26 Nec Corp 分布帰還型半導体レ−ザ
JPS61255086A (ja) * 1985-05-08 1986-11-12 Mitsubishi Electric Corp 半導体レ−ザ装置
EP0205139B1 (de) * 1985-06-10 1992-09-23 Nec Corporation Halbleiterlaservorrichtung mit verteilter Rückkopplung
JPS63185A (ja) * 1986-06-19 1988-01-05 Fujitsu Ltd 半導体レ−ザ

Also Published As

Publication number Publication date
DE3873398T2 (de) 1993-03-18
US4847856A (en) 1989-07-11
EP0289250A2 (de) 1988-11-02
EP0289250A3 (en) 1989-04-05
EP0289250B1 (de) 1992-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition