DE3681052D1 - Halbleiterlaser mit verteilter rueckkopplung. - Google Patents

Halbleiterlaser mit verteilter rueckkopplung.

Info

Publication number
DE3681052D1
DE3681052D1 DE8686103692T DE3681052T DE3681052D1 DE 3681052 D1 DE3681052 D1 DE 3681052D1 DE 8686103692 T DE8686103692 T DE 8686103692T DE 3681052 T DE3681052 T DE 3681052T DE 3681052 D1 DE3681052 D1 DE 3681052D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
distributed feedback
feedback
distributed
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686103692T
Other languages
English (en)
Inventor
Masayuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3681052D1 publication Critical patent/DE3681052D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686103692T 1985-03-20 1986-03-19 Halbleiterlaser mit verteilter rueckkopplung. Expired - Lifetime DE3681052D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60057334A JPS61216383A (ja) 1985-03-20 1985-03-20 分布帰還型半導体レ−ザ

Publications (1)

Publication Number Publication Date
DE3681052D1 true DE3681052D1 (de) 1991-10-02

Family

ID=13052668

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686103692T Expired - Lifetime DE3681052D1 (de) 1985-03-20 1986-03-19 Halbleiterlaser mit verteilter rueckkopplung.

Country Status (4)

Country Link
US (1) US4796273A (de)
EP (1) EP0195425B1 (de)
JP (1) JPS61216383A (de)
DE (1) DE3681052D1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62144378A (ja) * 1985-12-18 1987-06-27 Sony Corp 分布帰還覆半導体レ−ザ−
US4740987A (en) * 1986-06-30 1988-04-26 American Telephone And Telegraph Company, At&T Bell Laboratories Distributed-feedback laser having enhanced mode selectivity
JP2700312B2 (ja) * 1987-01-07 1998-01-21 シャープ株式会社 分布帰還型半導体レーザ装置
JPS63231403A (ja) * 1987-03-11 1988-09-27 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 光導波路を有する光学装置
JPS63244694A (ja) * 1987-03-30 1988-10-12 Sony Corp 分布帰還形半導体レ−ザ
EP0289250B1 (de) * 1987-04-27 1992-08-05 Nippon Telegraph And Telephone Corporation Phasenverschobener Halbleiterlaser mit verteilter Rückkopplung
JPS649682A (en) * 1987-07-01 1989-01-12 Nec Corp Distributed feedback semiconductor laser
JP2659199B2 (ja) * 1987-11-11 1997-09-30 日本電気株式会社 可変波長フィルタ
JP2819557B2 (ja) * 1988-03-18 1998-10-30 富士通株式会社 半導体発光装置
DE3817326A1 (de) * 1988-05-20 1989-11-30 Siemens Ag Verfahren zur herstellung von gitterstrukturen mit um eine halbe gitterperiode gegeneinander versetzten abschnitten
US4952019A (en) * 1988-10-27 1990-08-28 General Electric Company Grating-coupled surface-emitting superluminescent device
US5012484A (en) * 1990-01-02 1991-04-30 At&T Bell Laboratories Analog optical fiber communication system, and laser adapted for use in such a system
JP2553217B2 (ja) * 1990-04-19 1996-11-13 株式会社東芝 レーザ素子及びその製造方法
US5052015A (en) * 1990-09-13 1991-09-24 At&T Bell Laboratories Phase shifted distributed feedback laser
JP2772204B2 (ja) * 1992-09-07 1998-07-02 株式会社東芝 光出力の線型性に優れた高出力分布帰還型半導体レ−ザ
US5537432A (en) * 1993-01-07 1996-07-16 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser
US5499261A (en) * 1993-01-07 1996-03-12 Sdl, Inc. Light emitting optical device with on-chip external cavity reflector
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
EP0753914B1 (de) * 1993-01-08 2000-09-06 Nec Corporation Laserdiodenelement mit hervorragender Intermodulationsverzerrungscharakteristik
DE69407628T2 (de) * 1993-02-01 1998-08-27 Matsushita Electric Ind Co Ltd Wellenleiter-Bildübertragungsvorrichtung und Vorrichtung zur Identifikation von Fingerabdrücken
JP3195159B2 (ja) * 1993-11-25 2001-08-06 株式会社東芝 光半導体素子
JPH08172237A (ja) * 1994-12-17 1996-07-02 Canon Inc 半導体レーザ、その変調方式およびそれを用いた光通信システム
TW289175B (de) * 1995-04-07 1996-10-21 Mitsubishi Electric Corp
US5715271A (en) * 1996-08-01 1998-02-03 Northern Telecom Limited Polarization independent grating resonator filter
CA2249053A1 (en) 1997-09-30 1999-03-30 Mitsui Chemicals, Incorporated Semiconductor laser device
JPH11312846A (ja) * 1998-04-27 1999-11-09 Canon Inc 偏波依存性を持つ位相シフト領域を有する分布帰還型半導体レーザ、それを用いた光送信機及び光通信システム
US6501777B1 (en) 1999-01-29 2002-12-31 Nec Corporation Distributed feedback semiconductor laser emitting device having asymmetrical diffraction gratings
SE516784C2 (sv) * 1999-07-08 2002-03-05 Ericsson Telefon Ab L M Förfarande för effektivt urval av DFB-lasrar
US6477194B1 (en) * 1999-11-15 2002-11-05 Agere Systems Guardian Corp. Low temperature distributed feedback laser with loss grating and method
US20030063645A1 (en) * 2001-09-28 2003-04-03 The Furukawa Electric Co., Ltd. Semiconductor laser device and method for suppressing fabry perot oscillations
WO2003103107A1 (en) * 2002-05-31 2003-12-11 Applied Optoelectronics, Inc. Single-mode dbr laser with improved phase-shift section and method for fabricating same
US6638773B1 (en) * 2002-05-31 2003-10-28 Applied Optoelectronics, Inc. Method for fabricating single-mode DBR laser with improved yield
US6608855B1 (en) * 2002-05-31 2003-08-19 Applied Optoelectronics, Inc. Single-mode DBR laser with improved phase-shift section
US6826223B1 (en) 2003-05-28 2004-11-30 The United States Of America As Represented By The Secretary Of The Navy Surface-emitting photonic crystal distributed feedback laser systems and methods
US20070104242A1 (en) * 2003-11-28 2007-05-10 Nec Corporation Distributed-feedback semiconductor laser, distributed-feedback semiconductor laser array, and optical module
JP2007227560A (ja) * 2006-02-22 2007-09-06 Mitsubishi Electric Corp 利得結合型分布帰還型半導体レーザ
JP4884081B2 (ja) * 2006-05-30 2012-02-22 ルネサスエレクトロニクス株式会社 分布帰還型半導体レーザ
JP2008066620A (ja) * 2006-09-11 2008-03-21 Nec Electronics Corp 半導体レーザ及びその製造方法
JP2011119434A (ja) * 2009-12-03 2011-06-16 Renesas Electronics Corp 半導体レーザ素子及びその製造方法
JP5646852B2 (ja) * 2010-01-08 2014-12-24 日本オクラロ株式会社 半導体光素子及びその製造方法
JP6186864B2 (ja) * 2012-05-18 2017-08-30 住友電気工業株式会社 半導体レーザ
JP6355888B2 (ja) 2013-01-31 2018-07-11 日本オクラロ株式会社 半導体レーザ素子、及び光半導体装置
JP6183122B2 (ja) * 2013-10-02 2017-08-23 富士通株式会社 光半導体素子、光半導体素子アレイ、光送信モジュール及び光伝送システム
WO2018070432A1 (ja) 2016-10-12 2018-04-19 古河電気工業株式会社 半導体レーザ素子
JP2018098419A (ja) 2016-12-15 2018-06-21 ルネサスエレクトロニクス株式会社 半導体レーザ、光源ユニット、通信システム及び波長多重光通信システム
JP2017152724A (ja) * 2017-04-24 2017-08-31 日本オクラロ株式会社 半導体レーザ素子、及び光半導体装置
US10680409B2 (en) * 2018-03-07 2020-06-09 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Laser device
WO2021005700A1 (ja) * 2019-07-09 2021-01-14 日本電信電話株式会社 半導体光素子
US20210098970A1 (en) * 2019-10-01 2021-04-01 Ii-Vi Delaware, Inc. Isolator-free laser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970959A (en) * 1973-04-30 1976-07-20 The Regents Of The University Of California Two dimensional distributed feedback devices and lasers

Also Published As

Publication number Publication date
EP0195425A3 (en) 1987-12-09
US4796273A (en) 1989-01-03
EP0195425B1 (de) 1991-08-28
JPS61216383A (ja) 1986-09-26
EP0195425A2 (de) 1986-09-24
JPH0219987B2 (de) 1990-05-07

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