JP6355888B2 - 半導体レーザ素子、及び光半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 164
- 230000003287 optical effect Effects 0.000 title claims description 71
- 230000008878 coupling Effects 0.000 claims description 27
- 238000010168 coupling process Methods 0.000 claims description 27
- 238000005859 coupling reaction Methods 0.000 claims description 27
- 230000000737 periodic effect Effects 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 100
- 230000010363 phase shift Effects 0.000 description 35
- 230000005540 biological transmission Effects 0.000 description 26
- 230000004044 response Effects 0.000 description 13
- 230000007423 decrease Effects 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 101100406674 Arabidopsis thaliana OTU4 gene Proteins 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 238000009532 heart rate measurement Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
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- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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Description
以上と大きい場合には差異が明確になることを、発明者らは実験より明らかにした。
本発明に係る第1の実施形態に係る半導体レーザ素子は、CPM回折格子構造を有するDFBレーザ素子であり、1.3μm帯で発振するリッジ型レーザ素子である。すなわち、レーザ素子の共振器構造がDFB型(分布帰還型)であり、レーザ素子の光閉じ込め構造及び電流狭窄構造がリッジ型構造である。当該実施形態に係る半導体レーザ素子は、光ファイバ通信用送信光源として用いることが出来る。図1は、当該実施形態に係る半導体レーザ素子主要部の全体斜視図であり、図2は、当該実施形態に係る半導体レーザ素子の断面図である。図2には、レーザ素子内部の光の光軸を含み積層方向に広がる断面が示されている。
本発明の第2の実施形態に係る半導体レーザ素子は、本発明をBHレーザ素子に適用した場合であるが、レーザ素子の両端面に形成される誘電膜の構成は第1の実施形態と同じである。回折格子層の構造が第1の実施形態と異なっているが、これについては、後述する。なお、BHレーザ素子とは、BH構造(Buried Hetero-structure)を有する半導体レーザ素子であり、BH構造とは、活性層を含む半導体多層のうち光導波路の両側となる領域が除去されて形成されるメサストライプ構造の両側が半絶縁性半導体層で埋め込まれている構造をいう。すなわち、レーザ素子の光閉じ込め構造及び電流狭窄構造が埋込型である。図5は、当該実施形態に係る半導体レーザ素子主要部の全体斜視図であり、図6は、当該実施形態に係る半導体レーザ素子の断面図である。図6には、レーザ素子内部の光の光軸を含み積層方向に広がる断面が示されている。図5及び図6には、説明を簡単にするために、p型電極12、及びn型電極13が省略されているが、実際には、第1の実施形態に係る半導体レーザ素子同様に、p型電極12がp型InGaAsコンタクト層9と接して形成されており、n型電極13がn型InP基板1の下表面(裏面)に形成されている。
本発明に係る第3の実施形態に係る半導体レーザ素子は、1.3μm帯で発振するリッジ型のDFBレーザ素子であり、InGaAsP導波路層14が形成されていないことに加えて、以下に説明すること以外については、第1の実施形態に係る半導体レーザ素子と同じ構造をしている。図7は、当該実施形態に係る半導体レーザ素子の断面図であり、図2と同様に、図7には、レーザ素子内部の光の光軸を含み積層方向に広がる断面が示されており、図2に導波路層長LWとして示される部分(InGaAsP導波路層14を含む)が示されていない以外は、図7は図2と同じである。
Claims (6)
- 第1のピッチの周期的形状を有する第1の回折格子領域と、前記第1のピッチと異なる第2のピッチの周期的形状を有する第2の回折格子領域と、前記第1のピッチの周期的形状を有する第3の回折格子領域とが、光の出射側から光の進行方向に沿って順に接して並ぶ回折格子と、
光の出射側の端面に形成される反射抑制膜と、
前記光の出射側の端面とは反対側の端面に形成される反射膜と、
を備える半導体レーザ素子であって、
光の進行方向に沿う長さは、前記第1の回折格子領域が前記第3の回折格子領域より長く、
前記第1の回折格子領域の位相と前記第3の回折格子領域の位相が、0.6π以上0.9π以下の範囲でシフトするとともに、前記第1及び前記第2の回折格子領域の境界において前記第1及び前記第2の回折格子領域の位相が連続するよう、かつ前記第2及び前記第3の回折格子領域の境界において前記第2及び前記第3の回折格子領域の位相が連続するよう、前記第2の回折格子領域は、前記第2のピッチ及び前記第2の回折格子領域の光の進行方向に沿う長さを有し、
前記回折格子の光結合効率と前記回折格子の光の進行方向に沿う長さとの積が2.0以上2.5以下であり、共振器構造が分布帰還型である、
ことを特徴とする、半導体レーザ素子。 - 請求項1に記載の半導体レーザ素子であって、
リッジ型構造又は埋込型構造のいずれかの構造を有する、
ことを特徴とする、半導体レーザ素子。 - 請求項1又は2に記載の半導体レーザ素子であって、
InGaAlAs多重量子井戸を含む活性層をさらに備える、
ことを特徴とする、半導体レーザ素子。 - 請求項1乃至3のいずれかに記載の半導体レーザ素子であって、
前記回折格子の光結合効率が120cm−1以上である、
ことを特徴とする、半導体レーザ素子。 - 請求項1乃至4のいずれかに記載の半導体レーザ素子であって、
前記回折格子の光の進行方向に沿う長さが150μm以下である、
ことを特徴とする、半導体レーザ素子。 - 請求項1乃至5のいずれかに記載の半導体レーザ素子、を備える、光半導体装置。
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JP2013017543A JP6355888B2 (ja) | 2013-01-31 | 2013-01-31 | 半導体レーザ素子、及び光半導体装置 |
US14/167,102 US8958451B2 (en) | 2013-01-31 | 2014-01-29 | Semiconductor laser and optical semiconductor device |
US14/589,412 US9263852B2 (en) | 2013-01-31 | 2015-01-05 | Semiconductor laser and optical semiconductor device |
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JP6355888B2 (ja) * | 2013-01-31 | 2018-07-11 | 日本オクラロ株式会社 | 半導体レーザ素子、及び光半導体装置 |
JP7218082B2 (ja) | 2016-09-26 | 2023-02-06 | 日本ルメンタム株式会社 | 光半導体素子、光モジュール及び光半導体素子の製造方法 |
WO2018070432A1 (ja) | 2016-10-12 | 2018-04-19 | 古河電気工業株式会社 | 半導体レーザ素子 |
US10680409B2 (en) | 2018-03-07 | 2020-06-09 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Laser device |
US20220302678A1 (en) * | 2021-03-17 | 2022-09-22 | Macom Technology Solutions Holdings, Inc. | Semiconductor lasers |
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JPS6147685A (ja) | 1984-08-15 | 1986-03-08 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分布帰還形半導体レ−ザ |
JPS61216383A (ja) * | 1985-03-20 | 1986-09-26 | Nec Corp | 分布帰還型半導体レ−ザ |
JPS6295886A (ja) | 1985-10-23 | 1987-05-02 | Nippon Telegr & Teleph Corp <Ntt> | 分布帰還構造半導体レ−ザ |
JPH0724321B2 (ja) * | 1989-06-05 | 1995-03-15 | 日本電信電話株式会社 | 結合分布帰還型半導体レーザ |
JPH04326781A (ja) * | 1991-04-26 | 1992-11-16 | Hitachi Ltd | 半導体レーザ装置 |
US6501777B1 (en) * | 1999-01-29 | 2002-12-31 | Nec Corporation | Distributed feedback semiconductor laser emitting device having asymmetrical diffraction gratings |
JP3452131B2 (ja) | 1999-01-29 | 2003-09-29 | 日本電気株式会社 | 分布帰還型半導体レーザ |
JP2000277851A (ja) * | 1999-03-24 | 2000-10-06 | Nec Corp | 分布帰還型半導体レーザ |
JP4243506B2 (ja) * | 2003-04-03 | 2009-03-25 | 株式会社日立製作所 | 半導体レーザ及びそれを用いた光モジュール |
JP2006203100A (ja) * | 2005-01-24 | 2006-08-03 | Opnext Japan Inc | 半導体レーザおよび光送信器モジュール |
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JP2011119434A (ja) * | 2009-12-03 | 2011-06-16 | Renesas Electronics Corp | 半導体レーザ素子及びその製造方法 |
JP5310533B2 (ja) * | 2009-12-25 | 2013-10-09 | 富士通株式会社 | 光半導体装置 |
JP5646852B2 (ja) * | 2010-01-08 | 2014-12-24 | 日本オクラロ株式会社 | 半導体光素子及びその製造方法 |
JP6355888B2 (ja) * | 2013-01-31 | 2018-07-11 | 日本オクラロ株式会社 | 半導体レーザ素子、及び光半導体装置 |
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