DE3887545D1 - Halbleiterlaser mit verteilter Rückkopplung und Überwachungseinrichtung. - Google Patents

Halbleiterlaser mit verteilter Rückkopplung und Überwachungseinrichtung.

Info

Publication number
DE3887545D1
DE3887545D1 DE88302152T DE3887545T DE3887545D1 DE 3887545 D1 DE3887545 D1 DE 3887545D1 DE 88302152 T DE88302152 T DE 88302152T DE 3887545 T DE3887545 T DE 3887545T DE 3887545 D1 DE3887545 D1 DE 3887545D1
Authority
DE
Germany
Prior art keywords
monitoring device
semiconductor laser
distributed feedback
feedback
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88302152T
Other languages
English (en)
Other versions
DE3887545T2 (de
Inventor
Masashi Usami
Shigeyuki Akiba
Katsuyuki Utaka
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Application granted granted Critical
Publication of DE3887545D1 publication Critical patent/DE3887545D1/de
Publication of DE3887545T2 publication Critical patent/DE3887545T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE88302152T 1987-03-12 1988-03-11 Halbleiterlaser mit verteilter Rückkopplung und Überwachungseinrichtung. Expired - Fee Related DE3887545T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62055286A JPS63222485A (ja) 1987-03-12 1987-03-12 モニタ付分布帰還形半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3887545D1 true DE3887545D1 (de) 1994-03-17
DE3887545T2 DE3887545T2 (de) 1994-05-11

Family

ID=12994339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88302152T Expired - Fee Related DE3887545T2 (de) 1987-03-12 1988-03-11 Halbleiterlaser mit verteilter Rückkopplung und Überwachungseinrichtung.

Country Status (4)

Country Link
US (1) US4815090A (de)
EP (1) EP0282331B1 (de)
JP (1) JPS63222485A (de)
DE (1) DE3887545T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63199480A (ja) * 1987-02-16 1988-08-17 Sharp Corp 半導体レ−ザ走査装置
DE3711617A1 (de) * 1987-04-07 1988-10-27 Siemens Ag Monolithisch integrierte wellenleiter-fotodioden-fet-kombination
US4961198A (en) * 1988-01-14 1990-10-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US5006906A (en) * 1988-08-29 1991-04-09 Bell Communications Research, Inc. Integrated semiconductor waveguide/photodetector
DE3836802A1 (de) * 1988-10-28 1990-05-03 Siemens Ag Halbleiterlaseranordnung fuer hohe ausgangsleistungen im lateralen grundmodus
FR2639773B1 (fr) * 1988-11-25 1994-05-13 Alcatel Nv Laser a semi-conducteur accordable
US5040033A (en) * 1989-06-26 1991-08-13 At&T Bell Laboratories Optical amplifier-photodetector assemblage
US5208878A (en) * 1990-11-28 1993-05-04 Siemens Aktiengesellschaft Monolithically integrated laser-diode-waveguide combination
CA2091302A1 (en) * 1992-03-11 1993-09-12 Ichiro Yoshida Semiconductor laser and process for fabricating the same
US5391896A (en) * 1992-09-02 1995-02-21 Midwest Research Institute Monolithic multi-color light emission/detection device
GB2387481B (en) * 2002-04-10 2005-08-31 Intense Photonics Ltd Integrated active photonic device and photodetector
US7076124B2 (en) * 2002-12-20 2006-07-11 Avago Technologies, Ltd. Integrated multichannel laser driver and photodetector receiver
JP2007005594A (ja) * 2005-06-24 2007-01-11 Opnext Japan Inc 半導体光素子及びそれを用いたモジュール
US9165591B2 (en) 2013-08-07 2015-10-20 Seagate Technology Llc Grating based laser and power monitor for a heat-assisted magnetic recording device
US8923101B1 (en) 2013-09-17 2014-12-30 Seagate Technology Llc Monolithically integrated laser diode and power monitor
CN113273043B (zh) 2019-01-09 2023-12-22 三菱电机株式会社 光半导体集成元件
JP7229377B2 (ja) * 2019-09-17 2023-02-27 三菱電機株式会社 半導体レーザ装置
US20220376464A1 (en) * 2020-01-16 2022-11-24 Mitsubishi Electric Corporation Semiconductor optical integrated device and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186986A (ja) * 1982-04-27 1983-11-01 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JPS6089990A (ja) * 1983-10-21 1985-05-20 Sumitomo Electric Ind Ltd 光集積回路
JPS60149183A (ja) * 1984-01-17 1985-08-06 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS6155981A (ja) * 1984-08-27 1986-03-20 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
JPS61267387A (ja) * 1985-05-21 1986-11-26 Nec Corp 半導体レ−ザの製造方法
JPH06105820B2 (ja) * 1985-12-25 1994-12-21 国際電信電話株式会社 モニタ付分布帰還形半導体レ−ザ

Also Published As

Publication number Publication date
EP0282331B1 (de) 1994-02-02
DE3887545T2 (de) 1994-05-11
JPS63222485A (ja) 1988-09-16
JPH0523517B2 (de) 1993-04-02
EP0282331A2 (de) 1988-09-14
EP0282331A3 (en) 1990-05-30
US4815090A (en) 1989-03-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee