DE3689756D1 - Halbleiterlaser mit verteilter Rückkopplung. - Google Patents
Halbleiterlaser mit verteilter Rückkopplung.Info
- Publication number
- DE3689756D1 DE3689756D1 DE86300127T DE3689756T DE3689756D1 DE 3689756 D1 DE3689756 D1 DE 3689756D1 DE 86300127 T DE86300127 T DE 86300127T DE 3689756 T DE3689756 T DE 3689756T DE 3689756 D1 DE3689756 D1 DE 3689756D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- distributed feedback
- feedback
- distributed
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP309985A JPH067624B2 (ja) | 1985-01-10 | 1985-01-10 | 半導体レ−ザ−装置 |
JP2316985A JPS61182295A (ja) | 1985-02-07 | 1985-02-07 | 半導体レ−ザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3689756D1 true DE3689756D1 (de) | 1994-05-11 |
DE3689756T2 DE3689756T2 (de) | 1994-07-21 |
Family
ID=26336608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3689756T Expired - Lifetime DE3689756T2 (de) | 1985-01-10 | 1986-01-09 | Halbleiterlaser mit verteilter Rückkopplung. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4716570A (de) |
EP (1) | EP0187718B1 (de) |
DE (1) | DE3689756T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62144378A (ja) * | 1985-12-18 | 1987-06-27 | Sony Corp | 分布帰還覆半導体レ−ザ− |
JPH073909B2 (ja) * | 1987-09-08 | 1995-01-18 | 三菱電機株式会社 | 半導体レーザの製造方法 |
US4904045A (en) * | 1988-03-25 | 1990-02-27 | American Telephone And Telegraph Company | Grating coupler with monolithically integrated quantum well index modulator |
JPH0642583B2 (ja) * | 1988-08-17 | 1994-06-01 | シャープ株式会社 | 半導体レーザ装置 |
JP2619057B2 (ja) * | 1989-05-22 | 1997-06-11 | 三菱電機株式会社 | 半導体レーザの製造方法 |
KR940007605B1 (ko) * | 1991-11-07 | 1994-08-20 | 주식회사 금성사 | 반도체 레이저 다이오드 제조방법 |
JP2705409B2 (ja) * | 1991-11-21 | 1998-01-28 | 三菱電機株式会社 | 半導体分布帰還形レーザ装置 |
JP3714984B2 (ja) * | 1995-03-06 | 2005-11-09 | シャープ株式会社 | 分布帰還型半導体レーザ装置 |
JP2001266389A (ja) * | 2000-03-23 | 2001-09-28 | Tdk Corp | 近接場光を用いる光ヘッド |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4178604A (en) * | 1973-10-05 | 1979-12-11 | Hitachi, Ltd. | Semiconductor laser device |
JPS51146196A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Diode laser |
US4045749A (en) * | 1975-11-24 | 1977-08-30 | Xerox Corporation | Corrugation coupled twin guide laser |
US4233090A (en) * | 1979-06-28 | 1980-11-11 | Rca Corporation | Method of making a laser diode |
JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
JPS5861693A (ja) * | 1981-10-09 | 1983-04-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分布帰還形半導体レ−ザ |
JPS58140177A (ja) * | 1982-02-16 | 1983-08-19 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分布帰還形半導体レ−ザ |
DE3379442D1 (en) * | 1982-10-12 | 1989-04-20 | Nec Corp | Double heterostructure semiconductor laser with periodic structure formed in guide layer |
JPS59125685A (ja) * | 1983-01-06 | 1984-07-20 | Nec Corp | 分布帰還型埋め込み構造半導体レ−ザ |
JPS59127892A (ja) * | 1983-01-11 | 1984-07-23 | Nec Corp | 半導体レ−ザとその製造方法 |
JPS59151483A (ja) * | 1983-02-18 | 1984-08-29 | Agency Of Ind Science & Technol | 半導体レ−ザ装置 |
-
1986
- 1986-01-06 US US06/816,259 patent/US4716570A/en not_active Expired - Lifetime
- 1986-01-09 EP EP86300127A patent/EP0187718B1/de not_active Expired - Lifetime
- 1986-01-09 DE DE3689756T patent/DE3689756T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0187718A3 (en) | 1988-06-01 |
DE3689756T2 (de) | 1994-07-21 |
EP0187718A2 (de) | 1986-07-16 |
US4716570A (en) | 1987-12-29 |
EP0187718B1 (de) | 1994-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3681052D1 (de) | Halbleiterlaser mit verteilter rueckkopplung. | |
DE3585741D1 (de) | Halbleiterlaser mit verteilter rueckkopplung. | |
DE3676867D1 (de) | Halbleiterlaser. | |
DE3689180D1 (de) | Phasengesteuerter Halbleiterlaser. | |
DE3888435D1 (de) | Halbleiterlaser mit Oberflächenausstrahlung. | |
DE3674959D1 (de) | Halbleiterlaser. | |
DE3685466D1 (de) | Halbleiterlaser-vorrichtung. | |
NL194219B (nl) | Gedistribueerd teruggekoppelde halfgeleiderlaser. | |
DE3575501D1 (de) | Halbleiterlaser. | |
DE3686785D1 (de) | Halbleiterlaservorrichtung mit verteilter rueckkopplung. | |
DE3687102D1 (de) | Halbleiterlaser. | |
DE3688002D1 (de) | Halbleiter-laser. | |
DE3579991D1 (de) | Halbleiterlaser. | |
DE3873398D1 (de) | Phasenverschobener halbleiterlaser mit verteilter rueckkopplung. | |
DE69117488D1 (de) | Halbleiterlaser mit verteilter rückkoppelung | |
DE3586934D1 (de) | Halbleiterlaser. | |
DE3688853D1 (de) | Tripropylamin-dotierter laser. | |
DE3875768D1 (de) | Halbleiterlaser mit verteilter rueckkopplung. | |
DE3581557D1 (de) | Halbleiterlaser. | |
DE3782462D1 (de) | Laserdiode mit verteilter rueckkopplung. | |
DE69110605D1 (de) | Halbleiterlaser mit verteilter Rückkoppelung. | |
DE3689809D1 (de) | Eingebetteter Heterostrukturhalbleiterlaser. | |
DE3579826D1 (de) | Halbleiterlaser. | |
DE3668099D1 (de) | Laserhalbleiteranordnung. | |
DE3870996D1 (de) | Halbleiter-laser mit verteilter rueckkopplung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |