DE3689756D1 - Halbleiterlaser mit verteilter Rückkopplung. - Google Patents

Halbleiterlaser mit verteilter Rückkopplung.

Info

Publication number
DE3689756D1
DE3689756D1 DE86300127T DE3689756T DE3689756D1 DE 3689756 D1 DE3689756 D1 DE 3689756D1 DE 86300127 T DE86300127 T DE 86300127T DE 3689756 T DE3689756 T DE 3689756T DE 3689756 D1 DE3689756 D1 DE 3689756D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
distributed feedback
feedback
distributed
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE86300127T
Other languages
English (en)
Other versions
DE3689756T2 (de
Inventor
Toshihiko Yoshida
Haruhisa Takiguchi
Shinji Kyobata Mansion Kaneiwa
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP309985A external-priority patent/JPH067624B2/ja
Priority claimed from JP2316985A external-priority patent/JPS61182295A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3689756D1 publication Critical patent/DE3689756D1/de
Publication of DE3689756T2 publication Critical patent/DE3689756T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE3689756T 1985-01-10 1986-01-09 Halbleiterlaser mit verteilter Rückkopplung. Expired - Lifetime DE3689756T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP309985A JPH067624B2 (ja) 1985-01-10 1985-01-10 半導体レ−ザ−装置
JP2316985A JPS61182295A (ja) 1985-02-07 1985-02-07 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
DE3689756D1 true DE3689756D1 (de) 1994-05-11
DE3689756T2 DE3689756T2 (de) 1994-07-21

Family

ID=26336608

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3689756T Expired - Lifetime DE3689756T2 (de) 1985-01-10 1986-01-09 Halbleiterlaser mit verteilter Rückkopplung.

Country Status (3)

Country Link
US (1) US4716570A (de)
EP (1) EP0187718B1 (de)
DE (1) DE3689756T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62144378A (ja) * 1985-12-18 1987-06-27 Sony Corp 分布帰還覆半導体レ−ザ−
JPH073909B2 (ja) * 1987-09-08 1995-01-18 三菱電機株式会社 半導体レーザの製造方法
US4904045A (en) * 1988-03-25 1990-02-27 American Telephone And Telegraph Company Grating coupler with monolithically integrated quantum well index modulator
JPH0642583B2 (ja) * 1988-08-17 1994-06-01 シャープ株式会社 半導体レーザ装置
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
KR940007605B1 (ko) * 1991-11-07 1994-08-20 주식회사 금성사 반도체 레이저 다이오드 제조방법
JP2705409B2 (ja) * 1991-11-21 1998-01-28 三菱電機株式会社 半導体分布帰還形レーザ装置
JP3714984B2 (ja) * 1995-03-06 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置
JP2001266389A (ja) * 2000-03-23 2001-09-28 Tdk Corp 近接場光を用いる光ヘッド

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178604A (en) * 1973-10-05 1979-12-11 Hitachi, Ltd. Semiconductor laser device
JPS51146196A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode laser
US4045749A (en) * 1975-11-24 1977-08-30 Xerox Corporation Corrugation coupled twin guide laser
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
JPS5861693A (ja) * 1981-10-09 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
DE3379442D1 (en) * 1982-10-12 1989-04-20 Nec Corp Double heterostructure semiconductor laser with periodic structure formed in guide layer
JPS59125685A (ja) * 1983-01-06 1984-07-20 Nec Corp 分布帰還型埋め込み構造半導体レ−ザ
JPS59127892A (ja) * 1983-01-11 1984-07-23 Nec Corp 半導体レ−ザとその製造方法
JPS59151483A (ja) * 1983-02-18 1984-08-29 Agency Of Ind Science & Technol 半導体レ−ザ装置

Also Published As

Publication number Publication date
EP0187718B1 (de) 1994-04-06
EP0187718A2 (de) 1986-07-16
DE3689756T2 (de) 1994-07-21
US4716570A (en) 1987-12-29
EP0187718A3 (en) 1988-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition