DE69303679D1 - Hochleistungshalbleiterlaser mit verteilter Rückkoppelung - Google Patents

Hochleistungshalbleiterlaser mit verteilter Rückkoppelung

Info

Publication number
DE69303679D1
DE69303679D1 DE69303679T DE69303679T DE69303679D1 DE 69303679 D1 DE69303679 D1 DE 69303679D1 DE 69303679 T DE69303679 T DE 69303679T DE 69303679 T DE69303679 T DE 69303679T DE 69303679 D1 DE69303679 D1 DE 69303679D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
high power
power semiconductor
distributed feedback
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69303679T
Other languages
English (en)
Other versions
DE69303679T2 (de
Inventor
Akio Makuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Publication of DE69303679D1 publication Critical patent/DE69303679D1/de
Application granted granted Critical
Publication of DE69303679T2 publication Critical patent/DE69303679T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1246—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts plurality of phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69303679T 1992-09-07 1993-09-06 Hochleistungshalbleiterlaser mit verteilter Rückkoppelung Expired - Fee Related DE69303679T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4238134A JP2772204B2 (ja) 1992-09-07 1992-09-07 光出力の線型性に優れた高出力分布帰還型半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE69303679D1 true DE69303679D1 (de) 1996-08-22
DE69303679T2 DE69303679T2 (de) 1996-12-19

Family

ID=17025698

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69303679T Expired - Fee Related DE69303679T2 (de) 1992-09-07 1993-09-06 Hochleistungshalbleiterlaser mit verteilter Rückkoppelung

Country Status (5)

Country Link
US (1) US5353298A (de)
EP (1) EP0588197B1 (de)
JP (1) JP2772204B2 (de)
KR (1) KR970005164B1 (de)
DE (1) DE69303679T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3331568B2 (ja) * 1993-08-10 2002-10-07 住友電気工業株式会社 埋込型半導体レーザ
EP0782226A1 (de) * 1995-12-28 1997-07-02 Lucent Technologies Inc. Herstellungsverfahren für einen Halbleiterlaser mit Verteilter Rüchkopplung und entlang des Resonators varierender Gitterkopplung
JPH1075011A (ja) * 1996-08-30 1998-03-17 Sony Corp 半導体レーザ
JP2001036192A (ja) * 1999-07-22 2001-02-09 Nec Corp 分布帰還型半導体レーザおよびその製造方法
US6768858B2 (en) * 2001-03-16 2004-07-27 Adc Telecommunications, Inc. Cable clip with segregator and method
JP2003051640A (ja) * 2001-08-07 2003-02-21 Mitsubishi Electric Corp 半導体レーザ装置
JP2005072445A (ja) * 2003-08-27 2005-03-17 Mitsubishi Electric Corp 分布帰還型半導体レーザ
US7330626B2 (en) * 2005-08-31 2008-02-12 Adc Telecommunications, Inc. Cabinet including optical bulkhead plate for blown fiber system
JP2018098419A (ja) 2016-12-15 2018-06-21 ルネサスエレクトロニクス株式会社 半導体レーザ、光源ユニット、通信システム及び波長多重光通信システム
US11633766B2 (en) 2019-07-18 2023-04-25 Groninger Cleaning Systems, Inc. Cleaning apparatus, system and method
CN117498148A (zh) * 2023-12-29 2024-02-02 江苏华兴激光科技有限公司 一种基于光栅结构相移的方法及dfb激光器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216383A (ja) * 1985-03-20 1986-09-26 Nec Corp 分布帰還型半導体レ−ザ
JPS61143609A (ja) * 1985-11-22 1986-07-01 Hitachi Ltd 燃焼装置
JPS63186A (ja) * 1986-06-19 1988-01-05 Fujitsu Ltd 半導体レ−ザ
JP2574806B2 (ja) * 1987-08-24 1997-01-22 株式会社日立製作所 半導体レ−ザ装置
JPH0219987A (ja) * 1988-07-08 1990-01-23 Nec Eng Ltd Ｉｃカード読取書込装置
JPH0225086A (ja) * 1988-07-13 1990-01-26 Hitachi Ltd 半導体レーザ装置
US5012484A (en) * 1990-01-02 1991-04-30 At&T Bell Laboratories Analog optical fiber communication system, and laser adapted for use in such a system
US5285468A (en) * 1992-07-17 1994-02-08 At&T Bell Laboratories Analog optical fiber communication system, and laser adapted for use in such a system

Also Published As

Publication number Publication date
JP2772204B2 (ja) 1998-07-02
KR970005164B1 (ko) 1997-04-12
EP0588197B1 (de) 1996-07-17
JPH0685398A (ja) 1994-03-25
DE69303679T2 (de) 1996-12-19
US5353298A (en) 1994-10-04
EP0588197A1 (de) 1994-03-23

Similar Documents

Publication Publication Date Title
DE3681052D1 (de) Halbleiterlaser mit verteilter rueckkopplung.
DE69318658D1 (de) Leistungs-Halbeiterbauelement
DE69308112D1 (de) Leistungshalbleiter mit Strombegrenzung
KR910003873A (ko) 분포귀환형 레이저 다이오드
DE3585741D1 (de) Halbleiterlaser mit verteilter rueckkopplung.
DE59306825D1 (de) Durchstimmbarer Halbeiterlaser
DE69317724D1 (de) Stromversorgung
DE69328834D1 (de) Halbleiter HF-Verstärker mit hoher Ausgangsleistung
DE69312836D1 (de) Vielfachhalbleiterlaser
DE69305928D1 (de) Halbleiterlaser
DE68908919D1 (de) Halbleiterlaser mit verteilter Rückkoppelung und Strominjektions-Verfahren dafür.
DE69302661D1 (de) Leistungsversorgung
DE69312058D1 (de) Plattenlaser mit erhöhter lebensdauer
DE69117488D1 (de) Halbleiterlaser mit verteilter rückkoppelung
DE69111197D1 (de) Abstimmbarer Halbleiterlaser mit verteilter Rückkopplung.
NL194219B (nl) Gedistribueerd teruggekoppelde halfgeleiderlaser.
DE69432345D1 (de) Halbleiterdiodenlaser
DE3686785D1 (de) Halbleiterlaservorrichtung mit verteilter rueckkopplung.
DE3873398D1 (de) Phasenverschobener halbleiterlaser mit verteilter rueckkopplung.
DE69209045D1 (de) Halbleiterlaser
DE69116743D1 (de) Phasenverschobener Halbleiterlaser mit verteilter Rückkoppelung
DE69303679D1 (de) Hochleistungshalbleiterlaser mit verteilter Rückkoppelung
DE69315308D1 (de) Halbleiterleistungsregler
DE69203784D1 (de) Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung.
DE69110605D1 (de) Halbleiterlaser mit verteilter Rückkoppelung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee