ITTO910352A1 - Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno , e procedimento per la sua fabbricazione - Google Patents
Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno , e procedimento per la sua fabbricazioneInfo
- Publication number
- ITTO910352A1 ITTO910352A1 IT000352A ITTO910352A ITTO910352A1 IT TO910352 A1 ITTO910352 A1 IT TO910352A1 IT 000352 A IT000352 A IT 000352A IT TO910352 A ITTO910352 A IT TO910352A IT TO910352 A1 ITTO910352 A1 IT TO910352A1
- Authority
- IT
- Italy
- Prior art keywords
- gain
- procedure
- manufacture
- pair
- semiconductor laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO910352A IT1245541B (it) | 1991-05-13 | 1991-05-13 | Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione |
JP4143732A JPH07118567B2 (ja) | 1991-05-13 | 1992-05-11 | 利得結合分布帰還型半導体レーザ及びその製造方法 |
EP92108011A EP0513745B1 (en) | 1991-05-13 | 1992-05-12 | A gain-coupled distributed-feed-back semiconductor laser |
DE69203784T DE69203784T2 (de) | 1991-05-13 | 1992-05-12 | Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung. |
CA002068443A CA2068443C (en) | 1991-05-13 | 1992-05-12 | Gain-coupled distributed-feedback semiconductor laser |
DE199292108011T DE513745T1 (de) | 1991-05-13 | 1992-05-12 | Gewinngekoppelter halbleiterlaser mit verteilter rueckkoppelung. |
US07/882,294 US5276702A (en) | 1991-05-13 | 1992-05-13 | Gain-coupled distributed-feedback semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO910352A IT1245541B (it) | 1991-05-13 | 1991-05-13 | Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione |
Publications (3)
Publication Number | Publication Date |
---|---|
ITTO910352A0 ITTO910352A0 (it) | 1991-05-13 |
ITTO910352A1 true ITTO910352A1 (it) | 1992-11-13 |
IT1245541B IT1245541B (it) | 1994-09-29 |
Family
ID=11409344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITTO910352A IT1245541B (it) | 1991-05-13 | 1991-05-13 | Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione |
Country Status (6)
Country | Link |
---|---|
US (1) | US5276702A (it) |
EP (1) | EP0513745B1 (it) |
JP (1) | JPH07118567B2 (it) |
CA (1) | CA2068443C (it) |
DE (2) | DE513745T1 (it) |
IT (1) | IT1245541B (it) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0738204A (ja) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | 半導体光デバイス及びその製造方法 |
US5539766A (en) * | 1993-08-19 | 1996-07-23 | Matsushita Electric Industrial Co., Ltd. | Distributed feedback semiconductor laser |
FR2713350B1 (fr) * | 1993-12-06 | 1995-12-29 | Franck Delorme | Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant. |
EP1130716A2 (en) * | 1994-09-28 | 2001-09-05 | Matsushita Electric Industrial Co., Ltd. | Distributed feedback semiconductor laser and method for producing the same |
DE69525128T2 (de) * | 1994-10-26 | 2002-09-05 | Mitsubishi Chem Corp | Lichtemittierende Halbleiteranordnung und Herstellungsverfahren |
TW304310B (it) * | 1995-05-31 | 1997-05-01 | Siemens Ag | |
US6122299A (en) * | 1997-12-31 | 2000-09-19 | Sdl, Inc. | Angled distributed reflector optical device with enhanced light confinement |
JP4375834B2 (ja) | 1998-03-19 | 2009-12-02 | シャープ株式会社 | 利得結合型分布帰還半導体レーザ装置及びその製造方法 |
US6285698B1 (en) | 1998-09-25 | 2001-09-04 | Xerox Corporation | MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer |
JP2000261104A (ja) * | 1999-03-08 | 2000-09-22 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置及びその製造方法 |
US6574256B1 (en) | 2000-01-18 | 2003-06-03 | Xerox Corporation | Distributed feedback laser fabricated by lateral overgrowth of an active region |
US7016391B2 (en) | 2000-03-13 | 2006-03-21 | Sharp Kabushiki Kaisha | Gain-coupled distributed feedback semiconductor laser device and production method therefor |
US6881983B2 (en) * | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
US6649439B1 (en) * | 2002-08-01 | 2003-11-18 | Northrop Grumman Corporation | Semiconductor-air gap grating fabrication using a sacrificial layer process |
DE102005005635A1 (de) * | 2004-08-31 | 2006-03-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optoelektronisches Bauelement mit einer Quantentopfstruktur und Verfahren zu dessen Herstellung |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4633476A (en) * | 1984-11-16 | 1986-12-30 | Spectra Diode Laboratories, Inc. | Semiconductor laser with internal reflectors and vertical output |
JPH0716079B2 (ja) * | 1987-07-10 | 1995-02-22 | 松下電器産業株式会社 | 半導体レ−ザ装置 |
JPS6421986A (en) * | 1987-07-17 | 1989-01-25 | Nippon Telegraph & Telephone | Manufacture of quantum fine line laser diode of current-injection type having buried structure |
JPH01106489A (ja) * | 1987-10-20 | 1989-04-24 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPH01248586A (ja) * | 1988-03-29 | 1989-10-04 | Nec Corp | 光半導体装置の製造方法 |
JP2713445B2 (ja) * | 1988-11-25 | 1998-02-16 | 古河電気工業株式会社 | 半導体レーザ素子 |
JPH02163928A (ja) * | 1988-12-16 | 1990-06-25 | Fujitsu Ltd | 量子細線または量子箱の形成方法 |
JPH02254778A (ja) * | 1989-03-29 | 1990-10-15 | Olympus Optical Co Ltd | 分布帰還形半導体レーザ及びその製造方法 |
-
1991
- 1991-05-13 IT ITTO910352A patent/IT1245541B/it active IP Right Grant
-
1992
- 1992-05-11 JP JP4143732A patent/JPH07118567B2/ja not_active Expired - Fee Related
- 1992-05-12 DE DE199292108011T patent/DE513745T1/de active Pending
- 1992-05-12 EP EP92108011A patent/EP0513745B1/en not_active Expired - Lifetime
- 1992-05-12 DE DE69203784T patent/DE69203784T2/de not_active Expired - Fee Related
- 1992-05-12 CA CA002068443A patent/CA2068443C/en not_active Expired - Fee Related
- 1992-05-13 US US07/882,294 patent/US5276702A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0513745B1 (en) | 1995-08-02 |
IT1245541B (it) | 1994-09-29 |
DE69203784D1 (de) | 1995-09-07 |
JPH07118567B2 (ja) | 1995-12-18 |
DE513745T1 (de) | 1993-09-23 |
CA2068443A1 (en) | 1992-11-14 |
DE69203784T2 (de) | 1995-12-21 |
EP0513745A3 (en) | 1992-12-02 |
JPH05183236A (ja) | 1993-07-23 |
EP0513745A2 (en) | 1992-11-19 |
US5276702A (en) | 1994-01-04 |
CA2068443C (en) | 1996-05-21 |
ITTO910352A0 (it) | 1991-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19950419 |