DE68908604D1 - Optischer Halbleiterverstärker. - Google Patents
Optischer Halbleiterverstärker.Info
- Publication number
- DE68908604D1 DE68908604D1 DE89304979T DE68908604T DE68908604D1 DE 68908604 D1 DE68908604 D1 DE 68908604D1 DE 89304979 T DE89304979 T DE 89304979T DE 68908604 T DE68908604 T DE 68908604T DE 68908604 D1 DE68908604 D1 DE 68908604D1
- Authority
- DE
- Germany
- Prior art keywords
- optical semiconductor
- semiconductor amplifier
- amplifier
- optical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63118298A JPH01289287A (ja) | 1988-05-17 | 1988-05-17 | 半導体光増幅素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68908604D1 true DE68908604D1 (de) | 1993-09-30 |
DE68908604T2 DE68908604T2 (de) | 1993-12-16 |
Family
ID=14733214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89304979T Expired - Fee Related DE68908604T2 (de) | 1988-05-17 | 1989-05-17 | Optischer Halbleiterverstärker. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4897845A (de) |
EP (1) | EP0342953B1 (de) |
JP (1) | JPH01289287A (de) |
DE (1) | DE68908604T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5131002A (en) * | 1991-02-12 | 1992-07-14 | Massachusetts Institute Of Technology | External cavity semiconductor laser system |
US5313324A (en) * | 1991-03-27 | 1994-05-17 | Massachusetts Institute Of Technology | Solid state optical converter |
RU2134007C1 (ru) * | 1998-03-12 | 1999-07-27 | Государственное предприятие Научно-исследовательский институт "Полюс" | Полупроводниковый оптический усилитель |
DE19954093A1 (de) * | 1999-11-10 | 2001-05-23 | Infineon Technologies Ag | Anordnung für Hochleistungslaser |
US20030012246A1 (en) * | 2001-07-12 | 2003-01-16 | Klimek Daniel E. | Semiconductor zigzag laser and optical amplifier |
US20050040410A1 (en) * | 2002-02-12 | 2005-02-24 | Nl-Nanosemiconductor Gmbh | Tilted cavity semiconductor optoelectronic device and method of making same |
US7031360B2 (en) | 2002-02-12 | 2006-04-18 | Nl Nanosemiconductor Gmbh | Tilted cavity semiconductor laser (TCSL) and method of making same |
TW200603401A (en) | 2004-04-07 | 2006-01-16 | Nl Nanosemiconductor Gmbh | Optoelectronic device based on an antiwaveguiding cavity |
WO2005122349A1 (en) | 2004-06-07 | 2005-12-22 | Nl Nanosemiconductor Gmbh | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer |
WO2007100341A2 (en) * | 2005-04-29 | 2007-09-07 | Massachusetts Institute Of Technology | Grazing incidence slab semiconductor laser system and method |
US7433376B1 (en) | 2006-08-07 | 2008-10-07 | Textron Systems Corporation | Zig-zag laser with improved liquid cooling |
JP2014007335A (ja) * | 2012-06-26 | 2014-01-16 | Hamamatsu Photonics Kk | 半導体発光素子 |
US9923634B2 (en) * | 2015-09-23 | 2018-03-20 | Fujitsu Limited | Harmonic generation and phase sensitive amplification using a bragg reflection waveguide |
JP7408924B2 (ja) * | 2018-06-19 | 2024-01-09 | 富士フイルムビジネスイノベーション株式会社 | 半導体光増幅器、光出力装置、および距離計測装置 |
JP7239920B2 (ja) * | 2019-03-01 | 2023-03-15 | 富士フイルムビジネスイノベーション株式会社 | 半導体光増幅素子、半導体光増幅器、光出力装置、および距離計測装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE789175A (fr) * | 1971-09-24 | 1973-01-15 | Siemens Ag | Amplificateur intermediaire pour un systeme de transmission d'informations |
DE2248371C2 (de) * | 1972-10-03 | 1985-12-05 | Siemens AG, 1000 Berlin und 8000 München | In einen optischen Wellenleiter für ein optisches Nachrichtenübertragungssystem integrierter Zwischenverstärker |
GB1539028A (en) * | 1975-12-18 | 1979-01-24 | Tokyo Inst Tech | Optical systems |
JPS53124457A (en) * | 1977-04-06 | 1978-10-30 | Toshiba Corp | Light amprification circuit |
CA1267716C (en) * | 1984-02-23 | 1990-04-10 | LATERAL EMITTING LIGHT EMITTING DIODE | |
FR2575870B1 (fr) * | 1985-01-10 | 1987-01-30 | Sermage Bernard | Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active |
-
1988
- 1988-05-17 JP JP63118298A patent/JPH01289287A/ja active Pending
-
1989
- 1989-05-10 US US07/350,088 patent/US4897845A/en not_active Expired - Fee Related
- 1989-05-17 DE DE89304979T patent/DE68908604T2/de not_active Expired - Fee Related
- 1989-05-17 EP EP89304979A patent/EP0342953B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH01289287A (ja) | 1989-11-21 |
EP0342953A3 (en) | 1990-04-25 |
DE68908604T2 (de) | 1993-12-16 |
EP0342953A2 (de) | 1989-11-23 |
US4897845A (en) | 1990-01-30 |
EP0342953B1 (de) | 1993-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |