DE68908604T2 - Optischer Halbleiterverstärker. - Google Patents

Optischer Halbleiterverstärker.

Info

Publication number
DE68908604T2
DE68908604T2 DE89304979T DE68908604T DE68908604T2 DE 68908604 T2 DE68908604 T2 DE 68908604T2 DE 89304979 T DE89304979 T DE 89304979T DE 68908604 T DE68908604 T DE 68908604T DE 68908604 T2 DE68908604 T2 DE 68908604T2
Authority
DE
Germany
Prior art keywords
optical semiconductor
semiconductor amplifier
amplifier
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89304979T
Other languages
English (en)
Other versions
DE68908604D1 (de
Inventor
Katsuyuki Utaka
Yuichi Matsushima
Kazuo Sakai
Shigeyuki Akiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Application granted granted Critical
Publication of DE68908604D1 publication Critical patent/DE68908604D1/de
Publication of DE68908604T2 publication Critical patent/DE68908604T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE89304979T 1988-05-17 1989-05-17 Optischer Halbleiterverstärker. Expired - Fee Related DE68908604T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63118298A JPH01289287A (ja) 1988-05-17 1988-05-17 半導体光増幅素子

Publications (2)

Publication Number Publication Date
DE68908604D1 DE68908604D1 (de) 1993-09-30
DE68908604T2 true DE68908604T2 (de) 1993-12-16

Family

ID=14733214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89304979T Expired - Fee Related DE68908604T2 (de) 1988-05-17 1989-05-17 Optischer Halbleiterverstärker.

Country Status (4)

Country Link
US (1) US4897845A (de)
EP (1) EP0342953B1 (de)
JP (1) JPH01289287A (de)
DE (1) DE68908604T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131002A (en) * 1991-02-12 1992-07-14 Massachusetts Institute Of Technology External cavity semiconductor laser system
US5313324A (en) * 1991-03-27 1994-05-17 Massachusetts Institute Of Technology Solid state optical converter
RU2134007C1 (ru) * 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
DE19954093A1 (de) * 1999-11-10 2001-05-23 Infineon Technologies Ag Anordnung für Hochleistungslaser
EP1405379A1 (de) * 2001-07-12 2004-04-07 Textron Systems Corporation Halbleiter zick-zack laser und optischer verstärker
US20050040410A1 (en) * 2002-02-12 2005-02-24 Nl-Nanosemiconductor Gmbh Tilted cavity semiconductor optoelectronic device and method of making same
US7031360B2 (en) * 2002-02-12 2006-04-18 Nl Nanosemiconductor Gmbh Tilted cavity semiconductor laser (TCSL) and method of making same
TW200603401A (en) 2004-04-07 2006-01-16 Nl Nanosemiconductor Gmbh Optoelectronic device based on an antiwaveguiding cavity
US7369583B2 (en) 2004-06-07 2008-05-06 Innolume Gmbh Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer
WO2007100341A2 (en) * 2005-04-29 2007-09-07 Massachusetts Institute Of Technology Grazing incidence slab semiconductor laser system and method
US7433376B1 (en) 2006-08-07 2008-10-07 Textron Systems Corporation Zig-zag laser with improved liquid cooling
JP2014007335A (ja) * 2012-06-26 2014-01-16 Hamamatsu Photonics Kk 半導体発光素子
US9923634B2 (en) * 2015-09-23 2018-03-20 Fujitsu Limited Harmonic generation and phase sensitive amplification using a bragg reflection waveguide
JP7408924B2 (ja) * 2018-06-19 2024-01-09 富士フイルムビジネスイノベーション株式会社 半導体光増幅器、光出力装置、および距離計測装置
JP7239920B2 (ja) * 2019-03-01 2023-03-15 富士フイルムビジネスイノベーション株式会社 半導体光増幅素子、半導体光増幅器、光出力装置、および距離計測装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2248371C2 (de) * 1972-10-03 1985-12-05 Siemens AG, 1000 Berlin und 8000 München In einen optischen Wellenleiter für ein optisches Nachrichtenübertragungssystem integrierter Zwischenverstärker
BE789175A (fr) * 1971-09-24 1973-01-15 Siemens Ag Amplificateur intermediaire pour un systeme de transmission d'informations
GB1539028A (en) * 1975-12-18 1979-01-24 Tokyo Inst Tech Optical systems
JPS53124457A (en) * 1977-04-06 1978-10-30 Toshiba Corp Light amprification circuit
CA1267716C (en) * 1984-02-23 1990-04-10 LATERAL EMITTING LIGHT EMITTING DIODE
FR2575870B1 (fr) * 1985-01-10 1987-01-30 Sermage Bernard Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active

Also Published As

Publication number Publication date
EP0342953A2 (de) 1989-11-23
EP0342953B1 (de) 1993-08-25
JPH01289287A (ja) 1989-11-21
EP0342953A3 (en) 1990-04-25
DE68908604D1 (de) 1993-09-30
US4897845A (en) 1990-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee