DE68919941D1 - Optischer Halbleiterverstärker mit verkürzter Gewinn-Erholungszeit. - Google Patents
Optischer Halbleiterverstärker mit verkürzter Gewinn-Erholungszeit.Info
- Publication number
- DE68919941D1 DE68919941D1 DE68919941T DE68919941T DE68919941D1 DE 68919941 D1 DE68919941 D1 DE 68919941D1 DE 68919941 T DE68919941 T DE 68919941T DE 68919941 T DE68919941 T DE 68919941T DE 68919941 D1 DE68919941 D1 DE 68919941D1
- Authority
- DE
- Germany
- Prior art keywords
- optical semiconductor
- recovery time
- semiconductor amplifier
- shortened recovery
- shortened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23725288A | 1988-08-26 | 1988-08-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68919941D1 true DE68919941D1 (de) | 1995-01-26 |
DE68919941T2 DE68919941T2 (de) | 1995-04-20 |
Family
ID=22892937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68919941T Expired - Fee Related DE68919941T2 (de) | 1988-08-26 | 1989-08-21 | Optischer Halbleiterverstärker mit verkürzter Gewinn-Erholungszeit. |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0356189B1 (de) |
JP (1) | JPH0648744B2 (de) |
KR (1) | KR0139544B1 (de) |
CA (1) | CA1292040C (de) |
DE (1) | DE68919941T2 (de) |
ES (1) | ES2064449T3 (de) |
HK (1) | HK193695A (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4530254B2 (ja) * | 2003-10-02 | 2010-08-25 | Fdk株式会社 | プラズモンモード光導波路 |
JP2006005167A (ja) | 2004-06-17 | 2006-01-05 | Sumitomo Electric Ind Ltd | 半導体光素子 |
JP4552549B2 (ja) | 2004-07-16 | 2010-09-29 | 住友電気工業株式会社 | 半導体光素子 |
JP2006066724A (ja) | 2004-08-27 | 2006-03-09 | Sumitomo Electric Ind Ltd | 半導体光素子 |
JP4461980B2 (ja) | 2004-09-22 | 2010-05-12 | 住友電気工業株式会社 | 半導体光素子 |
JP2006093350A (ja) | 2004-09-22 | 2006-04-06 | Sumitomo Electric Ind Ltd | 半導体光素子 |
WO2006114782A1 (en) * | 2005-04-26 | 2006-11-02 | University College Cork-National University Of Ireland, Cork. | An optical switch |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7707720A (nl) * | 1977-07-12 | 1979-01-16 | Philips Nv | Halfgeleiderlaser of -versterker. |
-
1989
- 1989-08-04 CA CA000607638A patent/CA1292040C/en not_active Expired - Lifetime
- 1989-08-21 ES ES89308470T patent/ES2064449T3/es not_active Expired - Lifetime
- 1989-08-21 DE DE68919941T patent/DE68919941T2/de not_active Expired - Fee Related
- 1989-08-21 EP EP89308470A patent/EP0356189B1/de not_active Expired - Lifetime
- 1989-08-23 JP JP1215166A patent/JPH0648744B2/ja not_active Expired - Lifetime
- 1989-08-25 KR KR1019890012122A patent/KR0139544B1/ko not_active IP Right Cessation
-
1995
- 1995-12-28 HK HK193695A patent/HK193695A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0356189B1 (de) | 1994-12-14 |
JPH0648744B2 (ja) | 1994-06-22 |
DE68919941T2 (de) | 1995-04-20 |
EP0356189A3 (en) | 1990-10-17 |
JPH0320724A (ja) | 1991-01-29 |
ES2064449T3 (es) | 1995-02-01 |
KR900003672A (ko) | 1990-03-26 |
EP0356189A2 (de) | 1990-02-28 |
HK193695A (en) | 1996-01-05 |
KR0139544B1 (ko) | 1998-07-01 |
CA1292040C (en) | 1991-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |