DE68924209D1 - Optisch gesteuerte Halbleiteranordnung. - Google Patents

Optisch gesteuerte Halbleiteranordnung.

Info

Publication number
DE68924209D1
DE68924209D1 DE68924209T DE68924209T DE68924209D1 DE 68924209 D1 DE68924209 D1 DE 68924209D1 DE 68924209 T DE68924209 T DE 68924209T DE 68924209 T DE68924209 T DE 68924209T DE 68924209 D1 DE68924209 D1 DE 68924209D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
controlled semiconductor
optically controlled
optically
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68924209T
Other languages
English (en)
Other versions
DE68924209T2 (de
Inventor
Toshiaki Miyajima
Kazumasa Kioi
Mituo Matunami
Tukasa Doi
Minoru Yoshioka
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP16643888A external-priority patent/JPH0744291B2/ja
Priority claimed from JP19634388A external-priority patent/JP2857397B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE68924209D1 publication Critical patent/DE68924209D1/de
Publication of DE68924209T2 publication Critical patent/DE68924209T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
DE68924209T 1988-07-04 1989-07-04 Optisch gesteuerte Halbleiteranordnung. Expired - Fee Related DE68924209T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16643888A JPH0744291B2 (ja) 1988-07-04 1988-07-04 光結合型半導体リレー装置
JP19634388A JP2857397B2 (ja) 1988-08-05 1988-08-05 光駆動型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE68924209D1 true DE68924209D1 (de) 1995-10-19
DE68924209T2 DE68924209T2 (de) 1996-04-04

Family

ID=26490812

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68924209T Expired - Fee Related DE68924209T2 (de) 1988-07-04 1989-07-04 Optisch gesteuerte Halbleiteranordnung.

Country Status (3)

Country Link
US (1) US5144395A (de)
EP (1) EP0350284B1 (de)
DE (1) DE68924209T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3186938B2 (ja) * 1994-12-12 2001-07-11 富士通株式会社 外部電源オン／オフ制御システム
US7067895B1 (en) * 2003-01-10 2006-06-27 Eastman Kodak Company Color imager cell with transistors formed under the photodiodes
US20070152290A1 (en) * 2005-12-30 2007-07-05 Lexmark International, Inc Thin film light-activated power switches, photovoltaic devices and methods for making micro-fluid ejected electronic devices
ITMI20111559A1 (it) 2011-08-30 2013-03-01 St Microelectronics Srl Strato tco di contatto frontale di un pannello solare a film sottile con strato barriera di metallo refrattario e processo di fabbricazione

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465293A (en) * 1966-03-11 1969-09-02 Fairchild Camera Instr Co Detector array controlling mos transistor matrix
US4268843A (en) * 1979-02-21 1981-05-19 General Electric Company Solid state relay
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
JPS5922360A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Works Ltd 光入力モス型トランジスタ
JPS61247078A (ja) * 1985-04-24 1986-11-04 Matsushita Electric Works Ltd 半導体リレ−
JPS61272967A (ja) * 1985-05-28 1986-12-03 Fuji Electric Co Ltd 半導体集積回路装置
JPS62106660A (ja) * 1985-11-01 1987-05-18 Agency Of Ind Science & Technol 半導体装置
JPS62122180A (ja) * 1985-11-21 1987-06-03 Sharp Corp 太陽電池の製造方法
FR2590750B1 (fr) * 1985-11-22 1991-05-10 Telemecanique Electrique Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
JPS6351681A (ja) * 1986-08-20 1988-03-04 Agency Of Ind Science & Technol 半導体装置
JPH0734482B2 (ja) * 1987-04-30 1995-04-12 シャープ株式会社 光結合型半導体リレ−装置
US4931656A (en) * 1988-03-07 1990-06-05 Dionics Inc. Means to dynamically discharge a capacitively charged electrical device
JPH0758803B2 (ja) * 1988-06-24 1995-06-21 日産自動車株式会社 光スイッチング装置
JPH0744291B2 (ja) * 1988-07-04 1995-05-15 シャープ株式会社 光結合型半導体リレー装置
JP2555887B2 (ja) * 1989-06-19 1996-11-20 日本電気株式会社 トランスファー型ソリッドステートリレー

Also Published As

Publication number Publication date
EP0350284B1 (de) 1995-09-13
EP0350284A3 (de) 1991-03-20
DE68924209T2 (de) 1996-04-04
EP0350284A2 (de) 1990-01-10
US5144395A (en) 1992-09-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee