FR2590750B1 - Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif - Google Patents

Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif

Info

Publication number
FR2590750B1
FR2590750B1 FR8517279A FR8517279A FR2590750B1 FR 2590750 B1 FR2590750 B1 FR 2590750B1 FR 8517279 A FR8517279 A FR 8517279A FR 8517279 A FR8517279 A FR 8517279A FR 2590750 B1 FR2590750 B1 FR 2590750B1
Authority
FR
France
Prior art keywords
realizing
switching device
power switching
semiconductor power
static relay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8517279A
Other languages
English (en)
Other versions
FR2590750A1 (fr
Inventor
Jacques Thire
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telemecanique SA
Original Assignee
Telemecanique Electrique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telemecanique Electrique SA filed Critical Telemecanique Electrique SA
Priority to FR8517279A priority Critical patent/FR2590750B1/fr
Publication of FR2590750A1 publication Critical patent/FR2590750A1/fr
Application granted granted Critical
Publication of FR2590750B1 publication Critical patent/FR2590750B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electronic Switches (AREA)
FR8517279A 1985-11-22 1985-11-22 Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif Expired - Lifetime FR2590750B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8517279A FR2590750B1 (fr) 1985-11-22 1985-11-22 Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8517279A FR2590750B1 (fr) 1985-11-22 1985-11-22 Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif

Publications (2)

Publication Number Publication Date
FR2590750A1 FR2590750A1 (fr) 1987-05-29
FR2590750B1 true FR2590750B1 (fr) 1991-05-10

Family

ID=9325069

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8517279A Expired - Lifetime FR2590750B1 (fr) 1985-11-22 1985-11-22 Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif

Country Status (1)

Country Link
FR (1) FR2590750B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989006439A1 (fr) * 1987-12-28 1989-07-13 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Reseau de cellules solaires pour la commande de portes mosfet
DE68924209T2 (de) * 1988-07-04 1996-04-04 Sharp Kk Optisch gesteuerte Halbleiteranordnung.
EP0416284B1 (fr) * 1989-09-07 1995-03-15 Siemens Aktiengesellschaft Coupleur optique
CN1191394A (zh) * 1997-02-20 1998-08-26 杨泰和 藉前置光－电转换元件驱动的绝缘栅双极晶体管

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268843A (en) * 1979-02-21 1981-05-19 General Electric Company Solid state relay
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4323799A (en) * 1979-08-09 1982-04-06 Bell Telephone Laboratories, Incorporated Impulse activated time delay self-restoring switch
US4307298A (en) * 1980-02-07 1981-12-22 Bell Telephone Laboratories, Incorporated Optically toggled bilateral switch having low leakage current
US4419586A (en) * 1981-08-27 1983-12-06 Motorola, Inc. Solid-state relay and regulator
DE3345449A1 (de) * 1982-12-21 1984-07-12 International Rectifier Corp., Los Angeles, Calif. Festkoerper-wechselspannungsrelais
GB2154820B (en) * 1984-01-23 1988-05-25 Int Rectifier Corp Photovoltaic relay

Also Published As

Publication number Publication date
FR2590750A1 (fr) 1987-05-29

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