CN1191394A - 藉前置光-电转换元件驱动的绝缘栅双极晶体管 - Google Patents

藉前置光-电转换元件驱动的绝缘栅双极晶体管 Download PDF

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CN1191394A
CN1191394A CN97102646A CN97102646A CN1191394A CN 1191394 A CN1191394 A CN 1191394A CN 97102646 A CN97102646 A CN 97102646A CN 97102646 A CN97102646 A CN 97102646A CN 1191394 A CN1191394 A CN 1191394A
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light
igbt
electric
low
voltage
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杨泰和
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Priority to CN97102646A priority Critical patent/CN1191394A/zh
Priority to US08/807,738 priority patent/US5844248A/en
Priority to EP97302345A priority patent/EP0869612A1/en
Priority to JP14629197A priority patent/JPH118380A/ja
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

Abstract

一种藉前置光-电转换元件驱动的绝缘栅双极晶体管为揭示藉由能匹配低压电能信号的电-光能发光元件如LED、灯泡等,及与其耦合的光-电转换元件如晶体或非晶光电池,以产生高电压微电流信号,供输往绝缘栅双极晶体管的栅极与发射极,以驱动绝缘栅双极晶体管,进而确保以低压信号源驱动的绝缘栅双极晶体管能正常动作。

Description

藉前置光-电转换元件驱动的 绝缘栅双极晶体管
本发明涉及一种绝缘栅双极晶体管,更具体地说,本发明涉及一种藉前置光-电转换元件驱动的绝缘栅双极晶体管,其工作电压较一般常规的同类晶体管低。
如所周知,绝缘栅双极晶体管(Insulated Gate Bipolar Transistor)为晚近发展的固态功率开关元件,由于开关功率容量大、使用方便而应用面甚广,但绝缘栅双极晶体管(IGBT)控制端为高阻抗型态,所匹配的驱动信号电流微小但电压则较高;以附图为例,通常为12V以上方能确保正常动作,若栅极与发射极间驱动信号电压太低则集电极及发射极间阻抗变大,而使开关热损耗急速增大而烧毁,使其在低压应用受限制,附图所示为传统绝缘栅双极晶体管的工作特性图,附图中绝缘栅双极晶体管的驱动信号不宜低于12V。
现有绝缘栅双极晶体管(IGBT)具有高输入阻抗特性,耗电流非常小,但须以8V以上直流电压之电能才能驱动,因此低压使用受限,如电源为6V时则无法工作;本发明藉内置高电压低电流以之光电池及发光管共同构成此项发明的驱动电路,而发光体可由灯泡或发光二极管的构成,其电压可自行选择,如发光二极管(LED)为1.2V-1.5V,灯泡则可更低,故此项设计可使绝缘栅双极晶体管的工作电压可进一步获得降低。
本发明与传统结构之不同点在于驱动双极晶体管电能由主动元件(光电池)所产生受控于光,而传统结构被动地受控于电压。
本发明的目的是要提供一种绝缘栅双极晶体管,它即使在低于12V的工作电压下也能正常工作。
这种藉前置光电转换元件驱动绝缘栅双极晶体管为揭示藉由能匹配低压电能信号的电-光发光元件如LED、灯泡等,及与其耦合的光-电转换元件如晶体或非光电池,以产生高电压微电流信号,供输往绝缘栅双极晶体管的栅极与发射极,以驱动绝缘栅双极晶体管,进而确保以低压信号源驱动的绝缘栅双极晶体管能正常动作。
图1为这种藉前置光-电转换元件驱动的绝缘栅双极晶体管的基本电路方块图,其中主要包括:
——绝缘栅双极晶体管Q101:为含单组单极性或双组逆性(twounits in contrary polarities)并接或各种桥式模组结构所构成,供依绝缘栅双极晶体管的数目匹配光-电转换元件PE101;
——光-电转换元件PE101:为由受光产生电能的晶体或非晶光电池,或其他型态的光-电元件所构成,供依正常受光状态能产生高于绝缘栅双极晶体管最低需求驱动电压;
——供匹配低压电-光发光行L101:为由发光二极管LED、灯泡等能由低压电-光元件所构成,上述低压之定义为低于绝缘栅双极晶体管最低所需的驱动电压,其与光-电转换元件PE101的匹配状态为依所需求为1对1或一组发光二极管LED同时驱动两组或两组以上的光-电转换元件PE101;
——负载LOAD101:含由电能产生机械能、光、热或电化学效应或其他电阻性、电容性、电感性等的各种负载。
藉由上述元件组合而在绝缘栅双极晶体管的栅极与发射极间并联设置能于正常受光状态产生高电压微电流的光-电转换元件,以及设置与光-电转换元件耦合的低压电-光发光元件如发光二极管LED、灯泡等,在低压电-光发光元件发光时供对光-电元件PE101激励,以产生相对的微电流高电压驱动电能信号以驱动绝缘栅双极晶体管。
上述低压电-光发光元件L101与光-电转换元件PE101可依结构需要而呈互相耦合的密封结构状态。
上述低压电-光发光元件L101与光-电转换元件PE101可依结构需要而呈与绝缘双极晶体管分离设置,或为一体模组包装的结构。
上述低压电源为交流或直流电流以驱动灯泡,或由直流电能发光二极管LED或其他电能激励的发光元件。
上述低压电源所驱动的灯泡或发光二极管或其他藉低压电能驱动的发光体可由自然光源所取代。
综合上述,这种藉前置光-电转换元件驱动的绝缘栅双极晶体管藉著低压电-光发光元件,及与于正常受光状态能产生高电压微流的光-电元件耦合,进而构成绝缘栅双极晶体管的前置驱动电路,使绝缘栅双极晶体管于输入低压驱动信号源亦能作良好操控及运作。

Claims (6)

1.一种藉前置光-电转换元件驱动的绝缘栅双极晶体管为揭示藉由能匹配低压电能信号的电-光转换发光元件如LED、灯泡等,及与其耦合的光-电转换元件如晶体或非晶电池,以产生高电压微电流信号,供输往绝缘以极晶体管的栅极与发射极,以驱动绝缘栅双极晶体管,进而确保以低压信号源驱动的绝缘栅双极晶体管能正常运作。
2.如权利要求1所述的绝缘栅双极晶体管,其特征在于,其基本电路主要包括:
——绝缘栅双极晶体管:为含单组单极性或双组逆极性并接成各种桥式模组结构所构成,供依绝缘栅双极晶体管数目匹配光-电转换元件(PE101);
——光-电转换元件(PE101):为由受光产生电能的晶体或非晶光电池,或其他型态的光-电元件所构成,供于正常受光状态能产生高于绝缘栅双极晶体管的最低所需驱动电压;
——供匹配低压电-光发光元件(L101):为由发光二极管、灯泡等能由低压电能转为光能件所构成,上述低压的定义为低于绝缘栅双极晶体管最低晶体管的所需求驱动电压。其与光-电转换元件(PE101)的匹配状态为依所需求1对1或一组发光二极管同时驱动两组或两组以上光-电转换元件(PE101);
——负载(LOAD101):含由电能产生机械能、光、热或电化学效应或其他电阻性、电容性、电感性等各种负载。
3.如权利要求1所述的绝缘栅双极晶体管,其特征在于电-光发光元件(L101)与光-电转换元件(PE101)可依结构需要而呈互相耦合的密封结构状态。
4.如权利要求1所述的绝缘栅双极晶体管,其特征在于其低压电-光发光元件(L101)与光-电转换元件(PE101)可依结构需要而呈与绝缘栅双极晶体管分离设置,或为一体模组包装的结构。
5.如权利要求1所述的绝缘栅双极晶体管,其特征在于其低压电源可为交流或直流电流以驱动灯泡,或由直流电能驱动发光二极管或其他电能激励发光元件。
6.如权利要求1所述的绝缘栅双极晶体管,其特征在于其低压电源所驱动的灯泡或发光二极管或其他藉低压电能驱动的发光管可由自然光源所取代。
CN97102646A 1997-02-20 1997-02-20 藉前置光-电转换元件驱动的绝缘栅双极晶体管 Pending CN1191394A (zh)

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Application Number Priority Date Filing Date Title
CN97102646A CN1191394A (zh) 1997-02-20 1997-02-20 藉前置光-电转换元件驱动的绝缘栅双极晶体管
US08/807,738 US5844248A (en) 1997-02-20 1997-03-04 Circuit arrangement including photoelectric transducers for supplying a high voltage driving signal to an insulated gate bipolar transistor
EP97302345A EP0869612A1 (en) 1997-02-20 1997-04-04 The pre-positioned photoelectric transducer driven insulated-gate bipolar transistor
JP14629197A JPH118380A (ja) 1997-02-20 1997-06-04 光電変換素子作動の絶縁ゲートバイポーラトランジスタ

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Application Number Priority Date Filing Date Title
CN97102646A CN1191394A (zh) 1997-02-20 1997-02-20 藉前置光-电转换元件驱动的绝缘栅双极晶体管
US08/807,738 US5844248A (en) 1997-02-20 1997-03-04 Circuit arrangement including photoelectric transducers for supplying a high voltage driving signal to an insulated gate bipolar transistor
EP97302345A EP0869612A1 (en) 1997-02-20 1997-04-04 The pre-positioned photoelectric transducer driven insulated-gate bipolar transistor
JP14629197A JPH118380A (ja) 1997-02-20 1997-06-04 光電変換素子作動の絶縁ゲートバイポーラトランジスタ

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WO2013159693A1 (en) * 2012-04-24 2013-10-31 Lei Guo Group iii-v semiconductor dc transformer and method for forming same
CN104868708A (zh) * 2015-06-05 2015-08-26 卢雪明 一种变频器上电缓冲及母线放电电路

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CN102163938A (zh) * 2010-01-29 2011-08-24 三垦电气株式会社 太阳光发电装置和太阳光发电系统
CN102163938B (zh) * 2010-01-29 2013-11-27 三垦电气株式会社 太阳光发电装置和太阳光发电系统
WO2013159693A1 (en) * 2012-04-24 2013-10-31 Lei Guo Group iii-v semiconductor dc transformer and method for forming same
CN104868708A (zh) * 2015-06-05 2015-08-26 卢雪明 一种变频器上电缓冲及母线放电电路

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US5844248A (en) 1998-12-01
EP0869612A1 (en) 1998-10-07

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