FR2538170B1 - Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee - Google Patents

Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee

Info

Publication number
FR2538170B1
FR2538170B1 FR8320500A FR8320500A FR2538170B1 FR 2538170 B1 FR2538170 B1 FR 2538170B1 FR 8320500 A FR8320500 A FR 8320500A FR 8320500 A FR8320500 A FR 8320500A FR 2538170 B1 FR2538170 B1 FR 2538170B1
Authority
FR
France
Prior art keywords
alternating current
relay circuit
current relay
thyristor structure
associated thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8320500A
Other languages
English (en)
Other versions
FR2538170A1 (fr
Inventor
Thomas Herman
Oliver Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/451,792 external-priority patent/US4535251A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of FR2538170A1 publication Critical patent/FR2538170A1/fr
Application granted granted Critical
Publication of FR2538170B1 publication Critical patent/FR2538170B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Facsimile Heads (AREA)
  • Thyristors (AREA)
  • Facsimile Scanning Arrangements (AREA)
FR8320500A 1982-12-21 1983-12-21 Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee Expired FR2538170B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/451,792 US4535251A (en) 1982-12-21 1982-12-21 A.C. Solid state relay circuit and structure
US55502583A 1983-11-25 1983-11-25

Publications (2)

Publication Number Publication Date
FR2538170A1 FR2538170A1 (fr) 1984-06-22
FR2538170B1 true FR2538170B1 (fr) 1988-05-27

Family

ID=27036523

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8320500A Expired FR2538170B1 (fr) 1982-12-21 1983-12-21 Circuit de relais de courant alternatif a semi-conducteurs et structure de thyristor associee

Country Status (12)

Country Link
KR (1) KR900004197B1 (fr)
BR (1) BR8307043A (fr)
CA (1) CA1237170A (fr)
CH (1) CH664861A5 (fr)
DE (1) DE3345449A1 (fr)
FR (1) FR2538170B1 (fr)
GB (2) GB2133641B (fr)
IL (1) IL70462A (fr)
IT (1) IT1194526B (fr)
MX (2) MX160049A (fr)
NL (1) NL8304376A (fr)
SE (1) SE8306952L (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2590750B1 (fr) * 1985-11-22 1991-05-10 Telemecanique Electrique Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif
GB2234642A (en) * 1989-07-19 1991-02-06 Philips Nv Protection for a switched bridge circuit
GB2241827B (en) * 1990-02-23 1994-01-26 Matsushita Electric Works Ltd Method for manufacturing optically triggered lateral thyristor
GB2254730B (en) * 1991-04-08 1994-09-21 Champion Spark Plug Europ High current photosensitive electronic switch
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
US6518604B1 (en) * 2000-09-21 2003-02-11 Conexant Systems, Inc. Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure
EP3249815B1 (fr) * 2016-05-23 2019-08-28 NXP USA, Inc. Agencement de circuit de mise hors tension rapide de dispositif de commutation bidirectionnel

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416839B2 (fr) * 1973-03-06 1979-06-25
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2932969A1 (de) * 1979-04-20 1980-10-30 Ske Halbleiter-relaiskreis und verfahren zu seiner herstellung
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
DE3019907A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer zweirichtungsthyristor
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos
US4361798A (en) * 1980-10-27 1982-11-30 Pitney Bowes Inc. System for extending the voltage range of a phase-fired triac controller

Also Published As

Publication number Publication date
GB2174242A (en) 1986-10-29
CH664861A5 (de) 1988-03-31
CA1237170A (fr) 1988-05-24
BR8307043A (pt) 1984-07-31
IT8324285A1 (it) 1985-06-20
DE3345449A1 (de) 1984-07-12
DE3345449C2 (fr) 1989-08-17
KR900004197B1 (ko) 1990-06-18
GB2133641B (en) 1986-10-22
IT1194526B (it) 1988-09-22
NL8304376A (nl) 1984-07-16
GB8333998D0 (en) 1984-02-01
IL70462A0 (en) 1984-03-30
GB2174242B (en) 1987-06-10
MX160049A (es) 1989-11-13
KR840007203A (ko) 1984-12-05
MX155562A (es) 1988-03-25
SE8306952L (sv) 1984-06-22
IT8324285A0 (it) 1983-12-20
FR2538170A1 (fr) 1984-06-22
GB8604263D0 (en) 1986-03-26
IL70462A (en) 1987-09-16
SE8306952D0 (sv) 1983-12-15
GB2133641A (en) 1984-07-25

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Legal Events

Date Code Title Description
ST Notification of lapse