IL70462A0 - A.c.solid state relay circuit and thyristor structure - Google Patents

A.c.solid state relay circuit and thyristor structure

Info

Publication number
IL70462A0
IL70462A0 IL70462A IL7046283A IL70462A0 IL 70462 A0 IL70462 A0 IL 70462A0 IL 70462 A IL70462 A IL 70462A IL 7046283 A IL7046283 A IL 7046283A IL 70462 A0 IL70462 A0 IL 70462A0
Authority
IL
Israel
Prior art keywords
solid state
relay circuit
state relay
thyristor structure
thyristor
Prior art date
Application number
IL70462A
Other versions
IL70462A (en
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/451,792 external-priority patent/US4535251A/en
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of IL70462A0 publication Critical patent/IL70462A0/en
Publication of IL70462A publication Critical patent/IL70462A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Facsimile Heads (AREA)
  • Thyristors (AREA)
  • Facsimile Scanning Arrangements (AREA)
IL70462A 1982-12-21 1983-12-15 A.c.solid state relay circuit and thyristor structure IL70462A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/451,792 US4535251A (en) 1982-12-21 1982-12-21 A.C. Solid state relay circuit and structure
US55502583A 1983-11-25 1983-11-25

Publications (2)

Publication Number Publication Date
IL70462A0 true IL70462A0 (en) 1984-03-30
IL70462A IL70462A (en) 1987-09-16

Family

ID=27036523

Family Applications (1)

Application Number Title Priority Date Filing Date
IL70462A IL70462A (en) 1982-12-21 1983-12-15 A.c.solid state relay circuit and thyristor structure

Country Status (12)

Country Link
KR (1) KR900004197B1 (en)
BR (1) BR8307043A (en)
CA (1) CA1237170A (en)
CH (1) CH664861A5 (en)
DE (1) DE3345449A1 (en)
FR (1) FR2538170B1 (en)
GB (2) GB2133641B (en)
IL (1) IL70462A (en)
IT (1) IT1194526B (en)
MX (2) MX155562A (en)
NL (1) NL8304376A (en)
SE (1) SE8306952L (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2590750B1 (en) * 1985-11-22 1991-05-10 Telemecanique Electrique SEMICONDUCTOR POWER SWITCHING DEVICE AND ITS USE FOR REALIZING A STATIC RELAY IN AC
GB2234642A (en) * 1989-07-19 1991-02-06 Philips Nv Protection for a switched bridge circuit
GB2241827B (en) * 1990-02-23 1994-01-26 Matsushita Electric Works Ltd Method for manufacturing optically triggered lateral thyristor
GB2254730B (en) * 1991-04-08 1994-09-21 Champion Spark Plug Europ High current photosensitive electronic switch
JP3495847B2 (en) * 1995-09-11 2004-02-09 シャープ株式会社 Semiconductor integrated circuit with thyristor
US6518604B1 (en) * 2000-09-21 2003-02-11 Conexant Systems, Inc. Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure
EP3249815B1 (en) * 2016-05-23 2019-08-28 NXP USA, Inc. Circuit arrangement for fast turn-off of bi-directional switching device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416839B2 (en) * 1973-03-06 1979-06-25
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2932969A1 (en) * 1979-04-20 1980-10-30 Ske Semiconductor relay circuit on single chip - uses two LED's isolated from remainder of circuit and optically excited thyristors
DE2922250A1 (en) * 1979-05-31 1980-12-11 Siemens Ag LIGHT CONTROLLED TRANSISTOR
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
DE3019907A1 (en) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München LIGHT-CONTROLLED TWO-WAY THYRISTOR
FR2488046A1 (en) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc DMOS controlled semiconductor power device - uses DMOS FET to drive thyristor with photodiodes deposited on insulating layer with power device using most of substrate area
US4361798A (en) * 1980-10-27 1982-11-30 Pitney Bowes Inc. System for extending the voltage range of a phase-fired triac controller

Also Published As

Publication number Publication date
FR2538170B1 (en) 1988-05-27
GB8604263D0 (en) 1986-03-26
DE3345449C2 (en) 1989-08-17
MX160049A (en) 1989-11-13
CH664861A5 (en) 1988-03-31
KR840007203A (en) 1984-12-05
CA1237170A (en) 1988-05-24
GB2174242B (en) 1987-06-10
GB2133641B (en) 1986-10-22
IT8324285A1 (en) 1985-06-20
NL8304376A (en) 1984-07-16
DE3345449A1 (en) 1984-07-12
BR8307043A (en) 1984-07-31
IL70462A (en) 1987-09-16
GB8333998D0 (en) 1984-02-01
SE8306952D0 (en) 1983-12-15
SE8306952L (en) 1984-06-22
GB2133641A (en) 1984-07-25
GB2174242A (en) 1986-10-29
IT8324285A0 (en) 1983-12-20
IT1194526B (en) 1988-09-22
FR2538170A1 (en) 1984-06-22
MX155562A (en) 1988-03-25
KR900004197B1 (en) 1990-06-18

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