GB2254730B - High current photosensitive electronic switch - Google Patents

High current photosensitive electronic switch

Info

Publication number
GB2254730B
GB2254730B GB9107376A GB9107376A GB2254730B GB 2254730 B GB2254730 B GB 2254730B GB 9107376 A GB9107376 A GB 9107376A GB 9107376 A GB9107376 A GB 9107376A GB 2254730 B GB2254730 B GB 2254730B
Authority
GB
United Kingdom
Prior art keywords
high current
electronic switch
photosensitive electronic
current photosensitive
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9107376A
Other versions
GB9107376D0 (en
GB2254730A (en
Inventor
Peter Howson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Champion Spark Plug Europe SA
Original Assignee
Champion Spark Plug Europe SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Champion Spark Plug Europe SA filed Critical Champion Spark Plug Europe SA
Priority to GB9107376A priority Critical patent/GB2254730B/en
Publication of GB9107376D0 publication Critical patent/GB9107376D0/en
Priority to DE4211865A priority patent/DE4211865A1/en
Publication of GB2254730A publication Critical patent/GB2254730A/en
Application granted granted Critical
Publication of GB2254730B publication Critical patent/GB2254730B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Glass Compositions (AREA)
GB9107376A 1991-04-08 1991-04-08 High current photosensitive electronic switch Expired - Fee Related GB2254730B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9107376A GB2254730B (en) 1991-04-08 1991-04-08 High current photosensitive electronic switch
DE4211865A DE4211865A1 (en) 1991-04-08 1992-04-08 LIGHT-SENSITIVE ELECTRONIC SWITCH FOR HIGH STROEME

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9107376A GB2254730B (en) 1991-04-08 1991-04-08 High current photosensitive electronic switch

Publications (3)

Publication Number Publication Date
GB9107376D0 GB9107376D0 (en) 1991-05-22
GB2254730A GB2254730A (en) 1992-10-14
GB2254730B true GB2254730B (en) 1994-09-21

Family

ID=10692846

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9107376A Expired - Fee Related GB2254730B (en) 1991-04-08 1991-04-08 High current photosensitive electronic switch

Country Status (2)

Country Link
DE (1) DE4211865A1 (en)
GB (1) GB2254730B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005043632A1 (en) * 2003-11-03 2005-05-12 Sustainable Technologies International Pty Ltd Multilayered photovoltaic device on envelope surface
GB2533541B (en) 2008-07-29 2017-08-30 Thales Holdings Uk Plc A photoconductive switch

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0063422A2 (en) * 1981-04-20 1982-10-27 Hughes Aircraft Company Heterostructure interdigital high speed photoconductive detector
GB2133641A (en) * 1982-12-21 1984-07-25 Int Rectifier Corp AC solid state relay circuit and thyristor structure
GB2170653A (en) * 1985-02-06 1986-08-06 Sharp Kk Production of photoelectric conversion film and contact type image sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0063422A2 (en) * 1981-04-20 1982-10-27 Hughes Aircraft Company Heterostructure interdigital high speed photoconductive detector
GB2133641A (en) * 1982-12-21 1984-07-25 Int Rectifier Corp AC solid state relay circuit and thyristor structure
GB2170653A (en) * 1985-02-06 1986-08-06 Sharp Kk Production of photoelectric conversion film and contact type image sensor

Also Published As

Publication number Publication date
DE4211865A1 (en) 1992-10-22
GB9107376D0 (en) 1991-05-22
GB2254730A (en) 1992-10-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020408