GB2262850B - Switching circuit - Google Patents

Switching circuit

Info

Publication number
GB2262850B
GB2262850B GB9226862A GB9226862A GB2262850B GB 2262850 B GB2262850 B GB 2262850B GB 9226862 A GB9226862 A GB 9226862A GB 9226862 A GB9226862 A GB 9226862A GB 2262850 B GB2262850 B GB 2262850B
Authority
GB
United Kingdom
Prior art keywords
switching circuit
switching
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9226862A
Other versions
GB2262850A (en
GB9226862D0 (en
Inventor
Woung-Moo Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR91024801A priority Critical patent/KR940008206B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB9518262A external-priority patent/GB2291296B/en
Publication of GB9226862D0 publication Critical patent/GB9226862D0/en
Publication of GB2262850A publication Critical patent/GB2262850A/en
Application granted granted Critical
Publication of GB2262850B publication Critical patent/GB2262850B/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883Combination of depletion and enhancement field effect transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/12Programming voltage switching circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by G11C11/00
    • G11C5/14Power supply arrangements, e.g. Power down/chip (de)selection, layout of wiring/power grids, multiple supply levels
    • G11C5/143Detection of memory cassette insertion/removal; Continuity checks of supply and ground lines ; Detection of supply variations/interruptions/levels ; Switching between alternative supplies
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • H03K17/102Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
GB9226862A 1991-12-28 1992-12-23 Switching circuit Expired - Fee Related GB2262850B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR91024801A KR940008206B1 (en) 1991-12-28 1991-12-28 High voltage switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9518262A GB2291296B (en) 1991-12-28 1992-12-23 Switching circuit

Publications (3)

Publication Number Publication Date
GB9226862D0 GB9226862D0 (en) 1993-02-17
GB2262850A GB2262850A (en) 1993-06-30
GB2262850B true GB2262850B (en) 1996-04-17

Family

ID=19326362

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9226862A Expired - Fee Related GB2262850B (en) 1991-12-28 1992-12-23 Switching circuit

Country Status (7)

Country Link
JP (1) JP2677747B2 (en)
KR (1) KR940008206B1 (en)
DE (1) DE4242801C2 (en)
FR (1) FR2685807B1 (en)
GB (1) GB2262850B (en)
IT (1) IT1256217B (en)
TW (1) TW209926B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4128763B2 (en) 2000-10-30 2008-07-30 株式会社東芝 Voltage switching circuit
KR100725993B1 (en) * 2005-12-28 2007-05-31 삼성전자주식회사 Row decoder for preventing leakage current and semiconductor memory device having the same
JP4909647B2 (en) 2006-06-02 2012-04-04 株式会社東芝 Nonvolatile semiconductor memory device
KR20150121288A (en) * 2014-04-17 2015-10-29 에스케이하이닉스 주식회사 High-voltage switch circuit and non-volatile memory including the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0204499A2 (en) * 1985-05-29 1986-12-10 Advanced Micro Devices, Inc. High voltage isolation circuit for CMOS networks
US4689495A (en) * 1985-06-17 1987-08-25 Advanced Micro Devices, Inc. CMOS high voltage switch
GB2220811A (en) * 1988-06-29 1990-01-17 Seeq Technology Inc Current-regulated, voltage-regulated erase circuit for eeprom-memory cells
US5099143A (en) * 1988-10-15 1992-03-24 Sony Corporation Dual voltage supply circuit with multiplier-controlled transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541030B2 (en) * 1972-02-09 1980-10-21
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
JPS58151124A (en) * 1982-03-04 1983-09-08 Ricoh Co Ltd Level converting circuit
JPH0748310B2 (en) * 1987-04-24 1995-05-24 東芝マイクロエレクトロニクス株式会社 The semiconductor integrated circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0204499A2 (en) * 1985-05-29 1986-12-10 Advanced Micro Devices, Inc. High voltage isolation circuit for CMOS networks
US4689495A (en) * 1985-06-17 1987-08-25 Advanced Micro Devices, Inc. CMOS high voltage switch
GB2220811A (en) * 1988-06-29 1990-01-17 Seeq Technology Inc Current-regulated, voltage-regulated erase circuit for eeprom-memory cells
US5099143A (en) * 1988-10-15 1992-03-24 Sony Corporation Dual voltage supply circuit with multiplier-controlled transistor

Also Published As

Publication number Publication date
JP2677747B2 (en) 1997-11-17
KR930014615A (en) 1993-07-23
KR940008206B1 (en) 1994-09-08
GB9226862D0 (en) 1993-02-17
IT1256217B (en) 1995-11-29
ITMI922927A1 (en) 1993-06-29
GB2262850A (en) 1993-06-30
FR2685807B1 (en) 1995-11-03
TW209926B (en) 1993-07-21
JPH05259473A (en) 1993-10-08
FR2685807A1 (en) 1993-07-02
ITMI922927D0 (en) 1992-12-22
DE4242801C2 (en) 2000-02-10
DE4242801A1 (en) 1993-07-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20111223