GB9226862D0 - Switching circuit - Google Patents

Switching circuit

Info

Publication number
GB9226862D0
GB9226862D0 GB929226862A GB9226862A GB9226862D0 GB 9226862 D0 GB9226862 D0 GB 9226862D0 GB 929226862 A GB929226862 A GB 929226862A GB 9226862 A GB9226862 A GB 9226862A GB 9226862 D0 GB9226862 D0 GB 9226862D0
Authority
GB
United Kingdom
Prior art keywords
switching circuit
switching
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB929226862A
Other versions
GB2262850A (en
GB2262850B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to GB9518262A priority Critical patent/GB2291296B/en
Publication of GB9226862D0 publication Critical patent/GB9226862D0/en
Publication of GB2262850A publication Critical patent/GB2262850A/en
Application granted granted Critical
Publication of GB2262850B publication Critical patent/GB2262850B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Dc-Dc Converters (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
GB9226862A 1991-12-28 1992-12-23 Switching circuit Expired - Fee Related GB2262850B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9518262A GB2291296B (en) 1991-12-28 1992-12-23 Switching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024801A KR940008206B1 (en) 1991-12-28 1991-12-28 High voltage switch circuit

Publications (3)

Publication Number Publication Date
GB9226862D0 true GB9226862D0 (en) 1993-02-17
GB2262850A GB2262850A (en) 1993-06-30
GB2262850B GB2262850B (en) 1996-04-17

Family

ID=19326362

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9226862A Expired - Fee Related GB2262850B (en) 1991-12-28 1992-12-23 Switching circuit

Country Status (7)

Country Link
JP (1) JP2677747B2 (en)
KR (1) KR940008206B1 (en)
DE (1) DE4242801C2 (en)
FR (1) FR2685807B1 (en)
GB (1) GB2262850B (en)
IT (1) IT1256217B (en)
TW (1) TW209926B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4128763B2 (en) 2000-10-30 2008-07-30 株式会社東芝 Voltage switching circuit
KR100725993B1 (en) * 2005-12-28 2007-06-08 삼성전자주식회사 Row decoder for preventing leakage current and semiconductor memory device having the same
JP4909647B2 (en) 2006-06-02 2012-04-04 株式会社東芝 Nonvolatile semiconductor memory device
KR20150121288A (en) * 2014-04-17 2015-10-29 에스케이하이닉스 주식회사 High-voltage switch circuit and non-volatile memory including the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541030B2 (en) * 1972-02-09 1980-10-21
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
JPS58151124A (en) * 1982-03-04 1983-09-08 Ricoh Co Ltd Level converting circuit
US4672241A (en) * 1985-05-29 1987-06-09 Advanced Micro Devices, Inc. High voltage isolation circuit for CMOS networks
US4689495A (en) * 1985-06-17 1987-08-25 Advanced Micro Devices, Inc. CMOS high voltage switch
JPH0748310B2 (en) * 1987-04-24 1995-05-24 株式会社東芝 Semiconductor integrated circuit
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
GB2226727B (en) * 1988-10-15 1993-09-08 Sony Corp Address decoder circuits for non-volatile memories

Also Published As

Publication number Publication date
DE4242801C2 (en) 2000-02-10
GB2262850A (en) 1993-06-30
DE4242801A1 (en) 1993-07-01
GB2262850B (en) 1996-04-17
TW209926B (en) 1993-07-21
FR2685807A1 (en) 1993-07-02
JP2677747B2 (en) 1997-11-17
KR940008206B1 (en) 1994-09-08
FR2685807B1 (en) 1995-11-03
JPH05259473A (en) 1993-10-08
ITMI922927A1 (en) 1994-06-22
KR930014615A (en) 1993-07-23
IT1256217B (en) 1995-11-29
ITMI922927A0 (en) 1992-12-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20111223