KR930014615A - High voltage switch circuit - Google Patents

High voltage switch circuit Download PDF

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Publication number
KR930014615A
KR930014615A KR1019910024801A KR910024801A KR930014615A KR 930014615 A KR930014615 A KR 930014615A KR 1019910024801 A KR1019910024801 A KR 1019910024801A KR 910024801 A KR910024801 A KR 910024801A KR 930014615 A KR930014615 A KR 930014615A
Authority
KR
South Korea
Prior art keywords
high voltage
buffer means
switch circuit
gate
voltage switch
Prior art date
Application number
KR1019910024801A
Other languages
Korean (ko)
Other versions
KR940008206B1 (en
Inventor
이웅무
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910024801A priority Critical patent/KR940008206B1/en
Priority to TW081108372A priority patent/TW209926B/zh
Priority to FR9213607A priority patent/FR2685807B1/en
Priority to DE4242801A priority patent/DE4242801C2/en
Priority to ITMI922927A priority patent/IT1256217B/en
Priority to GB9518262A priority patent/GB2291296B/en
Priority to GB9226862A priority patent/GB2262850B/en
Priority to JP34656292A priority patent/JP2677747B2/en
Publication of KR930014615A publication Critical patent/KR930014615A/en
Application granted granted Critical
Publication of KR940008206B1 publication Critical patent/KR940008206B1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • H01L27/0883—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • H01L27/0251—
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 반도체 메모리 장치에 있어서 고전압 스위치 회로에 관한 것으로, 입력신호를 버퍼링하는 버퍼수단과, 상기 버퍼수단의 출력을 감지하여 일정 전압을 출력하는 고전압 펌프 회로부와, 상기 버퍼수단과 고전압 펌프회로부의 출력전압이 각각 전원전압 및 고전압일 경우 상기 버퍼수단과 고전압 펌프회로부를 전기적으로 분리하는 디커플링 수단을 구비하는 고전압스위치 회로에 있어서 상기 디커플링 수단을 게이트가 전원전압단에 연결되고 채널이 직렬 연결된 인핸스먼트형 트랜지스터와 디플리션형 트랜지스터로 구성하여 고전압스위치 회로의 출력전압이 고전압으로 상승될때 상기 게이트에 인가된 전원전압에 의해 상기 게이트와드레인에 인가되는 전계가 완화되도록 함으로써 상기 트랜지스터의 브레이크 다운 진압을 상승시켜 원하는 정도의 고전압을 출력할 수 있는 고전압 스위친 회로를 제공한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high voltage switch circuit, comprising: a buffer means for buffering an input signal, a high voltage pump circuit portion for sensing a output of the buffer means and outputting a constant voltage, and the buffer means and high voltage pump circuit portion. In a high voltage switch circuit having a decoupling means for electrically separating the buffer means and the high voltage pump circuit part when the output voltage is a power supply voltage and a high voltage, respectively, the decoupling means includes an enhancement in which a gate is connected to a power supply voltage terminal and a channel is connected in series. The breakdown suppression of the transistor is increased by reducing the electric field applied to the gate and the drain by the power supply voltage applied to the gate when the output voltage of the high voltage switch circuit rises to a high voltage. I want you to Provides a high voltage switcher circuit capable of outputting high voltage.

Description

고전압 스위치 회로High voltage switch circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 회로도.2 is a circuit diagram according to the present invention.

제3도는 본 발명에 따른 레이아웃도.3 is a layout diagram according to the present invention.

Claims (6)

입력신호를 버퍼링하는 버퍼수단과, 상기 버퍼수단의 출력을 감지하여 일정전압을 출력하는 고전압 펌프회로부와, 상기 버퍼수단과 고전압 펌프회로부의 출력전압이 각각 전원전압 및 그 고전압일 경우 상기 버퍼수단과 고전압 펌프 회로부를 전기적으로 분리하는 디커플링 수단을 구비하는 고전압 스위치 회로에 있어서, 상기 디커플링 수단이 서로 직렬 접속되고 각각의 게이트에 전원 전압이 인가된 인핸스먼트형 트랜지스터와 디플리션형 트랜지스터로 이루어짐을 특징으로 하는 고전압 스위치 회로.A buffer means for buffering an input signal, a high voltage pump circuit portion for sensing a output of the buffer means and outputting a constant voltage, and the buffer means when the output voltages of the buffer means and the high voltage pump circuit portion are power voltages and high voltages, respectively; A high voltage switch circuit comprising decoupling means for electrically separating a high voltage pump circuit portion, wherein the decoupling means is composed of an enhancement transistor and a depletion transistor in which a power supply voltage is applied to each gate in series. High voltage switch circuit. 제1항에 있어서, 상기 버퍼수단이 인버터이거나 낸드게이트이거나 노아게이트임을 특징으로 하는 고전압스위치 회로.The high voltage switch circuit according to claim 1, wherein the buffer means is an inverter, a NAND gate, or a noble gate. 제1항에 있어서, 상기 인핸스먼트형 및 디플리션형 트랜지스터가 동일 게이트 하부에서 서로 인접하여 형성된 채녈 영역으로 이루어짐을 특징으로 하는 고전압 스위치 회로.2. The high voltage switch circuit according to claim 1, wherein the enhancement type and depletion type transistors comprise a channel region formed adjacent to each other under the same gate. 입력신호를 버퍼링하는 버퍼수단과, 상기 버퍼수단의 출력을 감지하여 일정전압을 출력하는 고전압 펌프회로부와, 상기 버퍼수단과 고전압 펌프회로부의 출력전압이 각각 전원전압 및 그 고전압일 경우 상기 버퍼수단과 고전압 펌프 회로부를 전기적으로 분리하는 디커플링 수단을 구비하는 고전압 스위치 회로에 있어서, 상기 디커플링 트랜지스터의 소오스에 인접한 채널영역과 드레인에 인접한 채널 영역이 서로 다른 도전형으로 도광되어 이루어짐을 특징으로 하는 고전압 스위치회로.A buffer means for buffering an input signal, a high voltage pump circuit portion for sensing a output of the buffer means and outputting a constant voltage, and the buffer means when the output voltages of the buffer means and the high voltage pump circuit portion are power voltages and high voltages, respectively; A high voltage switch circuit comprising decoupling means for electrically separating a high voltage pump circuit portion, wherein the channel region adjacent to the source of the decoupling transistor and the channel region adjacent to the drain are guided with different conductivity types. . 제4항에 있어서, 상기 디커플링 트랜지스터의 게이트와 드레인에 인접한 채널 영역에 의해 인핸스먼트형 트랜지스터가 형성되고, 상기 게이트와 소오스 인접한 채널 영역에 의해 디플리션형 트랜지스터가 형성됨을 특징으로 하는 고전압 스위치 회로.5. The high voltage switch circuit of claim 4, wherein an enhancement transistor is formed by a channel region adjacent to a gate and a drain of the decoupling transistor, and a depletion transistor is formed by a channel region adjacent to the gate. 제5항에 있어서, 상기 디커플링 트랜지스터의 게이트가 전원전압단에 연결됨을 특징으로 하는 고전압 스위치 회로.6. The high voltage switch circuit of claim 5, wherein the gate of the decoupling transistor is connected to a power supply voltage terminal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910024801A 1991-12-28 1991-12-28 High voltage switch circuit KR940008206B1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019910024801A KR940008206B1 (en) 1991-12-28 1991-12-28 High voltage switch circuit
TW081108372A TW209926B (en) 1991-12-28 1992-10-21
FR9213607A FR2685807B1 (en) 1991-12-28 1992-11-12 HIGH VOLTAGE SWITCHING CIRCUIT.
DE4242801A DE4242801C2 (en) 1991-12-28 1992-12-17 High voltage circuit
ITMI922927A IT1256217B (en) 1991-12-28 1992-12-22 HIGH VOLTAGE SWITCHING CIRCUIT IN PARTICULAR FOR SEMICONDUCTOR MEMORY DEVICES.
GB9518262A GB2291296B (en) 1991-12-28 1992-12-23 Switching circuit
GB9226862A GB2262850B (en) 1991-12-28 1992-12-23 Switching circuit
JP34656292A JP2677747B2 (en) 1991-12-28 1992-12-25 High voltage switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024801A KR940008206B1 (en) 1991-12-28 1991-12-28 High voltage switch circuit

Publications (2)

Publication Number Publication Date
KR930014615A true KR930014615A (en) 1993-07-23
KR940008206B1 KR940008206B1 (en) 1994-09-08

Family

ID=19326362

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910024801A KR940008206B1 (en) 1991-12-28 1991-12-28 High voltage switch circuit

Country Status (7)

Country Link
JP (1) JP2677747B2 (en)
KR (1) KR940008206B1 (en)
DE (1) DE4242801C2 (en)
FR (1) FR2685807B1 (en)
GB (1) GB2262850B (en)
IT (1) IT1256217B (en)
TW (1) TW209926B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4128763B2 (en) 2000-10-30 2008-07-30 株式会社東芝 Voltage switching circuit
KR100725993B1 (en) * 2005-12-28 2007-06-08 삼성전자주식회사 Row decoder for preventing leakage current and semiconductor memory device having the same
JP4909647B2 (en) 2006-06-02 2012-04-04 株式会社東芝 Nonvolatile semiconductor memory device
KR20150121288A (en) * 2014-04-17 2015-10-29 에스케이하이닉스 주식회사 High-voltage switch circuit and non-volatile memory including the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541030B2 (en) * 1972-02-09 1980-10-21
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
JPS58151124A (en) * 1982-03-04 1983-09-08 Ricoh Co Ltd Level converting circuit
US4672241A (en) * 1985-05-29 1987-06-09 Advanced Micro Devices, Inc. High voltage isolation circuit for CMOS networks
US4689495A (en) * 1985-06-17 1987-08-25 Advanced Micro Devices, Inc. CMOS high voltage switch
JPH0748310B2 (en) * 1987-04-24 1995-05-24 株式会社東芝 Semiconductor integrated circuit
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
US5039882A (en) * 1988-10-15 1991-08-13 Sony Corporation Address decoder circuit for non-volatile memory

Also Published As

Publication number Publication date
ITMI922927A1 (en) 1994-06-22
GB2262850A (en) 1993-06-30
DE4242801A1 (en) 1993-07-01
TW209926B (en) 1993-07-21
IT1256217B (en) 1995-11-29
GB2262850B (en) 1996-04-17
FR2685807B1 (en) 1995-11-03
KR940008206B1 (en) 1994-09-08
JP2677747B2 (en) 1997-11-17
FR2685807A1 (en) 1993-07-02
ITMI922927A0 (en) 1992-12-22
DE4242801C2 (en) 2000-02-10
GB9226862D0 (en) 1993-02-17
JPH05259473A (en) 1993-10-08

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