GB8333998D0 - Ac solid state relay circuit - Google Patents

Ac solid state relay circuit

Info

Publication number
GB8333998D0
GB8333998D0 GB838333998A GB8333998A GB8333998D0 GB 8333998 D0 GB8333998 D0 GB 8333998D0 GB 838333998 A GB838333998 A GB 838333998A GB 8333998 A GB8333998 A GB 8333998A GB 8333998 D0 GB8333998 D0 GB 8333998D0
Authority
GB
United Kingdom
Prior art keywords
thyristor
control circuit
whenever
chips
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB838333998A
Other versions
GB2133641A (en
GB2133641B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/451,792 external-priority patent/US4535251A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB8333998D0 publication Critical patent/GB8333998D0/en
Publication of GB2133641A publication Critical patent/GB2133641A/en
Application granted granted Critical
Publication of GB2133641B publication Critical patent/GB2133641B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

The relay has two separate and identical power thyristors 210 and 211 connected in anti-parallel arrangement. The powerthyristors are each optically switched, lateral conduction devices and both are switched by illuminating their surface by reflected illumination from an LED 225. Each thyristor is provided with a respective control circuit which includes a MOSFET transistor 230-231, for clamping its respective thyristor gate whenever the voltage across the thyristor exceeds a given absolute value or whenever there is a high dV/dt transient across the thyristor. The control circuit for the control transistor includes a capacitance divider 236-239, one element of which is the distributed capacitance 238, 239 of the control transistor; a resistor 234, 235 and a zener diode 232, 233. The control circuit components may be integrated into the thyristor chips. Each of the two identical power chips and the LED chip are spaced from one another and mounted on an alumina substrate. <IMAGE>
GB08333998A 1982-12-21 1983-12-21 Ac solid state relay circuit and thyristor structure Expired GB2133641B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/451,792 US4535251A (en) 1982-12-21 1982-12-21 A.C. Solid state relay circuit and structure
US55502583A 1983-11-25 1983-11-25

Publications (3)

Publication Number Publication Date
GB8333998D0 true GB8333998D0 (en) 1984-02-01
GB2133641A GB2133641A (en) 1984-07-25
GB2133641B GB2133641B (en) 1986-10-22

Family

ID=27036523

Family Applications (2)

Application Number Title Priority Date Filing Date
GB08333998A Expired GB2133641B (en) 1982-12-21 1983-12-21 Ac solid state relay circuit and thyristor structure
GB08604263A Expired GB2174242B (en) 1982-12-21 1986-02-20 Optically fired lateral thyristor structure

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08604263A Expired GB2174242B (en) 1982-12-21 1986-02-20 Optically fired lateral thyristor structure

Country Status (12)

Country Link
KR (1) KR900004197B1 (en)
BR (1) BR8307043A (en)
CA (1) CA1237170A (en)
CH (1) CH664861A5 (en)
DE (1) DE3345449A1 (en)
FR (1) FR2538170B1 (en)
GB (2) GB2133641B (en)
IL (1) IL70462A (en)
IT (1) IT1194526B (en)
MX (2) MX160049A (en)
NL (1) NL8304376A (en)
SE (1) SE8306952L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107424992A (en) * 2016-05-23 2017-12-01 恩智浦美国有限公司 Quick dead circuit for two-way switching device is arranged

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2590750B1 (en) * 1985-11-22 1991-05-10 Telemecanique Electrique SEMICONDUCTOR POWER SWITCHING DEVICE AND ITS USE FOR REALIZING A STATIC RELAY IN AC
GB2234642A (en) * 1989-07-19 1991-02-06 Philips Nv Protection for a switched bridge circuit
GB2241827B (en) * 1990-02-23 1994-01-26 Matsushita Electric Works Ltd Method for manufacturing optically triggered lateral thyristor
GB2254730B (en) * 1991-04-08 1994-09-21 Champion Spark Plug Europ High current photosensitive electronic switch
JP3495847B2 (en) * 1995-09-11 2004-02-09 シャープ株式会社 Semiconductor integrated circuit with thyristor
US6518604B1 (en) 2000-09-21 2003-02-11 Conexant Systems, Inc. Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416839B2 (en) * 1973-03-06 1979-06-25
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2932969A1 (en) * 1979-04-20 1980-10-30 Ske Semiconductor relay circuit on single chip - uses two LED's isolated from remainder of circuit and optically excited thyristors
DE2922250A1 (en) * 1979-05-31 1980-12-11 Siemens Ag LIGHT CONTROLLED TRANSISTOR
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
DE3019907A1 (en) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München LIGHT-CONTROLLED TWO-WAY THYRISTOR
FR2488046A1 (en) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc DMOS controlled semiconductor power device - uses DMOS FET to drive thyristor with photodiodes deposited on insulating layer with power device using most of substrate area
US4361798A (en) * 1980-10-27 1982-11-30 Pitney Bowes Inc. System for extending the voltage range of a phase-fired triac controller

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107424992A (en) * 2016-05-23 2017-12-01 恩智浦美国有限公司 Quick dead circuit for two-way switching device is arranged
CN107424992B (en) * 2016-05-23 2023-08-18 恩智浦美国有限公司 Quick disconnect circuit arrangement for a bi-directional switching device

Also Published As

Publication number Publication date
GB2133641A (en) 1984-07-25
SE8306952L (en) 1984-06-22
SE8306952D0 (en) 1983-12-15
GB2174242A (en) 1986-10-29
IT1194526B (en) 1988-09-22
GB2133641B (en) 1986-10-22
IL70462A (en) 1987-09-16
MX155562A (en) 1988-03-25
GB8604263D0 (en) 1986-03-26
CA1237170A (en) 1988-05-24
IT8324285A0 (en) 1983-12-20
NL8304376A (en) 1984-07-16
IT8324285A1 (en) 1985-06-20
DE3345449C2 (en) 1989-08-17
CH664861A5 (en) 1988-03-31
KR840007203A (en) 1984-12-05
FR2538170B1 (en) 1988-05-27
KR900004197B1 (en) 1990-06-18
IL70462A0 (en) 1984-03-30
GB2174242B (en) 1987-06-10
BR8307043A (en) 1984-07-31
FR2538170A1 (en) 1984-06-22
MX160049A (en) 1989-11-13
DE3345449A1 (en) 1984-07-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19971221