GB8333998D0 - Ac solid state relay circuit - Google Patents
Ac solid state relay circuitInfo
- Publication number
- GB8333998D0 GB8333998D0 GB838333998A GB8333998A GB8333998D0 GB 8333998 D0 GB8333998 D0 GB 8333998D0 GB 838333998 A GB838333998 A GB 838333998A GB 8333998 A GB8333998 A GB 8333998A GB 8333998 D0 GB8333998 D0 GB 8333998D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- thyristor
- control circuit
- whenever
- chips
- solid state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000001052 transient effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Facsimile Heads (AREA)
- Thyristors (AREA)
- Facsimile Scanning Arrangements (AREA)
Abstract
The relay has two separate and identical power thyristors 210 and 211 connected in anti-parallel arrangement. The powerthyristors are each optically switched, lateral conduction devices and both are switched by illuminating their surface by reflected illumination from an LED 225. Each thyristor is provided with a respective control circuit which includes a MOSFET transistor 230-231, for clamping its respective thyristor gate whenever the voltage across the thyristor exceeds a given absolute value or whenever there is a high dV/dt transient across the thyristor. The control circuit for the control transistor includes a capacitance divider 236-239, one element of which is the distributed capacitance 238, 239 of the control transistor; a resistor 234, 235 and a zener diode 232, 233. The control circuit components may be integrated into the thyristor chips. Each of the two identical power chips and the LED chip are spaced from one another and mounted on an alumina substrate. <IMAGE>
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/451,792 US4535251A (en) | 1982-12-21 | 1982-12-21 | A.C. Solid state relay circuit and structure |
US55502583A | 1983-11-25 | 1983-11-25 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8333998D0 true GB8333998D0 (en) | 1984-02-01 |
GB2133641A GB2133641A (en) | 1984-07-25 |
GB2133641B GB2133641B (en) | 1986-10-22 |
Family
ID=27036523
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08333998A Expired GB2133641B (en) | 1982-12-21 | 1983-12-21 | Ac solid state relay circuit and thyristor structure |
GB08604263A Expired GB2174242B (en) | 1982-12-21 | 1986-02-20 | Optically fired lateral thyristor structure |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08604263A Expired GB2174242B (en) | 1982-12-21 | 1986-02-20 | Optically fired lateral thyristor structure |
Country Status (12)
Country | Link |
---|---|
KR (1) | KR900004197B1 (en) |
BR (1) | BR8307043A (en) |
CA (1) | CA1237170A (en) |
CH (1) | CH664861A5 (en) |
DE (1) | DE3345449A1 (en) |
FR (1) | FR2538170B1 (en) |
GB (2) | GB2133641B (en) |
IL (1) | IL70462A (en) |
IT (1) | IT1194526B (en) |
MX (2) | MX160049A (en) |
NL (1) | NL8304376A (en) |
SE (1) | SE8306952L (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107424992A (en) * | 2016-05-23 | 2017-12-01 | 恩智浦美国有限公司 | Quick dead circuit for two-way switching device is arranged |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2590750B1 (en) * | 1985-11-22 | 1991-05-10 | Telemecanique Electrique | SEMICONDUCTOR POWER SWITCHING DEVICE AND ITS USE FOR REALIZING A STATIC RELAY IN AC |
GB2234642A (en) * | 1989-07-19 | 1991-02-06 | Philips Nv | Protection for a switched bridge circuit |
GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
GB2254730B (en) * | 1991-04-08 | 1994-09-21 | Champion Spark Plug Europ | High current photosensitive electronic switch |
JP3495847B2 (en) * | 1995-09-11 | 2004-02-09 | シャープ株式会社 | Semiconductor integrated circuit with thyristor |
US6518604B1 (en) * | 2000-09-21 | 2003-02-11 | Conexant Systems, Inc. | Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5416839B2 (en) * | 1973-03-06 | 1979-06-25 | ||
US4001867A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Semiconductive devices with integrated circuit switches |
JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
DE2932969A1 (en) * | 1979-04-20 | 1980-10-30 | Ske | Semiconductor relay circuit on single chip - uses two LED's isolated from remainder of circuit and optically excited thyristors |
DE2922250A1 (en) * | 1979-05-31 | 1980-12-11 | Siemens Ag | LIGHT CONTROLLED TRANSISTOR |
US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
DE3019907A1 (en) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | LIGHT-CONTROLLED TWO-WAY THYRISTOR |
FR2488046A1 (en) * | 1980-07-31 | 1982-02-05 | Silicium Semiconducteur Ssc | DMOS controlled semiconductor power device - uses DMOS FET to drive thyristor with photodiodes deposited on insulating layer with power device using most of substrate area |
US4361798A (en) * | 1980-10-27 | 1982-11-30 | Pitney Bowes Inc. | System for extending the voltage range of a phase-fired triac controller |
-
1983
- 1983-12-15 SE SE8306952A patent/SE8306952L/en not_active Application Discontinuation
- 1983-12-15 IL IL70462A patent/IL70462A/en unknown
- 1983-12-15 DE DE19833345449 patent/DE3345449A1/en active Granted
- 1983-12-20 CH CH6781/83A patent/CH664861A5/en not_active IP Right Cessation
- 1983-12-20 CA CA000443824A patent/CA1237170A/en not_active Expired
- 1983-12-20 KR KR1019830006040A patent/KR900004197B1/en not_active IP Right Cessation
- 1983-12-20 NL NL8304376A patent/NL8304376A/en not_active Application Discontinuation
- 1983-12-20 IT IT24285/83A patent/IT1194526B/en active
- 1983-12-21 GB GB08333998A patent/GB2133641B/en not_active Expired
- 1983-12-21 BR BR8307043A patent/BR8307043A/en unknown
- 1983-12-21 MX MX4482A patent/MX160049A/en unknown
- 1983-12-21 FR FR8320500A patent/FR2538170B1/en not_active Expired
- 1983-12-21 MX MX199861A patent/MX155562A/en unknown
-
1986
- 1986-02-20 GB GB08604263A patent/GB2174242B/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107424992A (en) * | 2016-05-23 | 2017-12-01 | 恩智浦美国有限公司 | Quick dead circuit for two-way switching device is arranged |
CN107424992B (en) * | 2016-05-23 | 2023-08-18 | 恩智浦美国有限公司 | Quick disconnect circuit arrangement for a bi-directional switching device |
Also Published As
Publication number | Publication date |
---|---|
IT8324285A1 (en) | 1985-06-20 |
CH664861A5 (en) | 1988-03-31 |
FR2538170A1 (en) | 1984-06-22 |
SE8306952D0 (en) | 1983-12-15 |
GB2174242B (en) | 1987-06-10 |
IL70462A (en) | 1987-09-16 |
FR2538170B1 (en) | 1988-05-27 |
DE3345449A1 (en) | 1984-07-12 |
MX160049A (en) | 1989-11-13 |
CA1237170A (en) | 1988-05-24 |
IL70462A0 (en) | 1984-03-30 |
SE8306952L (en) | 1984-06-22 |
NL8304376A (en) | 1984-07-16 |
KR840007203A (en) | 1984-12-05 |
BR8307043A (en) | 1984-07-31 |
KR900004197B1 (en) | 1990-06-18 |
GB2133641A (en) | 1984-07-25 |
GB8604263D0 (en) | 1986-03-26 |
DE3345449C2 (en) | 1989-08-17 |
IT8324285A0 (en) | 1983-12-20 |
MX155562A (en) | 1988-03-25 |
GB2133641B (en) | 1986-10-22 |
GB2174242A (en) | 1986-10-29 |
IT1194526B (en) | 1988-09-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19971221 |