DE3875273T2 - Halbleiterlaser-vorrichtung. - Google Patents

Halbleiterlaser-vorrichtung.

Info

Publication number
DE3875273T2
DE3875273T2 DE8888303426T DE3875273T DE3875273T2 DE 3875273 T2 DE3875273 T2 DE 3875273T2 DE 8888303426 T DE8888303426 T DE 8888303426T DE 3875273 T DE3875273 T DE 3875273T DE 3875273 T2 DE3875273 T2 DE 3875273T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888303426T
Other languages
English (en)
Other versions
DE3875273D1 (de
Inventor
Shoji C O Patents Divis Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3875273D1 publication Critical patent/DE3875273D1/de
Application granted granted Critical
Publication of DE3875273T2 publication Critical patent/DE3875273T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8888303426T 1987-04-23 1988-04-15 Halbleiterlaser-vorrichtung. Expired - Fee Related DE3875273T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62100763A JPS63265485A (ja) 1987-04-23 1987-04-23 半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3875273D1 DE3875273D1 (de) 1992-11-19
DE3875273T2 true DE3875273T2 (de) 1993-04-08

Family

ID=14282545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888303426T Expired - Fee Related DE3875273T2 (de) 1987-04-23 1988-04-15 Halbleiterlaser-vorrichtung.

Country Status (6)

Country Link
US (1) US4888784A (de)
EP (1) EP0288224B1 (de)
JP (1) JPS63265485A (de)
KR (1) KR960009304B1 (de)
CA (1) CA1298641C (de)
DE (1) DE3875273T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2555197B2 (ja) * 1989-09-09 1996-11-20 三菱電機株式会社 半導体レーザ装置
US5329134A (en) * 1992-01-10 1994-07-12 International Business Machines Corporation Superluminescent diode having a quantum well and cavity length dependent threshold current
US5206877A (en) * 1992-02-18 1993-04-27 Eastman Kodak Company Distributed feedback laser diodes with selectively placed lossy sections
US5311539A (en) * 1992-11-25 1994-05-10 International Business Machines Corporation Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation
KR100345452B1 (ko) * 2000-12-14 2002-07-26 한국전자통신연구원 상부거울층 양단부에 확산영역을 구비하는 장파장표면방출 레이저 소자 및 그 제조 방법
US6600864B2 (en) * 2000-12-20 2003-07-29 Intel Corporation Method and apparatus for switching an optical beam using an optical rib waveguide
US7558307B2 (en) * 2004-02-16 2009-07-07 Sharp Kabushiki Kaisha Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system
JP4951267B2 (ja) * 2006-04-27 2012-06-13 日本オプネクスト株式会社 半導体レーザ素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980984A (ja) * 1982-11-01 1984-05-10 Hitachi Ltd 面発光分布帰還形半導体レ−ザ素子
JPS59129486A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体レーザ装置の製造方法
JPS60164383A (ja) * 1984-02-06 1985-08-27 Nec Corp 半導体レ−ザの製造方法
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser

Also Published As

Publication number Publication date
KR880013279A (ko) 1988-11-30
CA1298641C (en) 1992-04-07
EP0288224A3 (en) 1990-05-30
US4888784A (en) 1989-12-19
EP0288224B1 (de) 1992-10-14
DE3875273D1 (de) 1992-11-19
EP0288224A2 (de) 1988-10-26
JPS63265485A (ja) 1988-11-01
KR960009304B1 (en) 1996-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee