DE3786339T2 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3786339T2
DE3786339T2 DE87311420T DE3786339T DE3786339T2 DE 3786339 T2 DE3786339 T2 DE 3786339T2 DE 87311420 T DE87311420 T DE 87311420T DE 3786339 T DE3786339 T DE 3786339T DE 3786339 T2 DE3786339 T2 DE 3786339T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE87311420T
Other languages
English (en)
Other versions
DE3786339D1 (de
Inventor
Toshiro Hayakawa
Takahiro Suyama
Kosei Takahashi
Masafumi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3786339D1 publication Critical patent/DE3786339D1/de
Publication of DE3786339T2 publication Critical patent/DE3786339T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE87311420T 1986-12-26 1987-12-23 Halbleiterlaservorrichtung. Expired - Lifetime DE3786339T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61314275A JPS63164484A (ja) 1986-12-26 1986-12-26 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3786339D1 DE3786339D1 (de) 1993-07-29
DE3786339T2 true DE3786339T2 (de) 1994-01-20

Family

ID=18051398

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87311420T Expired - Lifetime DE3786339T2 (de) 1986-12-26 1987-12-23 Halbleiterlaservorrichtung.

Country Status (4)

Country Link
US (1) US4845724A (de)
EP (1) EP0273726B1 (de)
JP (1) JPS63164484A (de)
DE (1) DE3786339T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728672B2 (ja) * 1988-02-22 1998-03-18 株式会社東芝 半導体レーザ装置、ダブルヘテロウエハおよびその製造方法
JPH01293690A (ja) * 1988-05-23 1989-11-27 Mitsubishi Electric Corp 半導体レーザ
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JP2721185B2 (ja) * 1988-07-25 1998-03-04 株式会社東芝 リブ導波路型発光半導体装置
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device
JPH0279486A (ja) * 1988-09-14 1990-03-20 Sharp Corp 半導体レーザ素子
US5022036A (en) * 1988-12-29 1991-06-04 Sharp Kabushiki Kaisha Semiconductor laser device
JP2807250B2 (ja) * 1989-02-22 1998-10-08 株式会社東芝 半導体レーザ装置
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
US5182228A (en) * 1989-06-29 1993-01-26 Omron Corporation Method of manufacturing a semiconductor light-emitting device
JPH0332080A (ja) * 1989-06-29 1991-02-12 Omron Corp 半導体発光素子およびその製造方法
DE69010485T2 (de) * 1990-04-06 1995-01-26 Ibm Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers.
JPH04243216A (ja) * 1991-01-17 1992-08-31 Nec Corp 光導波路の製造方法ならびに光集積素子及びその製造方法
US5625637A (en) * 1991-03-28 1997-04-29 Seiko Epson Corporation Surface emitting semiconductor laser and its manufacturing process
US5329134A (en) * 1992-01-10 1994-07-12 International Business Machines Corporation Superluminescent diode having a quantum well and cavity length dependent threshold current
JP3238783B2 (ja) * 1992-07-30 2001-12-17 シャープ株式会社 半導体レーザ素子
US5789772A (en) * 1994-07-15 1998-08-04 The Whitaker Corporation Semi-insulating surface light emitting devices
US5629232A (en) * 1994-11-14 1997-05-13 The Whitaker Corporation Method of fabricating semiconductor light emitting devices
US5608234A (en) * 1994-11-14 1997-03-04 The Whitaker Corporation Semi-insulating edge emitting light emitting diode
US6973109B2 (en) * 2000-02-28 2005-12-06 Fuji Photo Film Co., Ltd. Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
DE10147791A1 (de) * 2001-09-27 2003-04-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf der Basis eines Nitrid-Verbindungshalbleiters
US20080089376A1 (en) * 2004-09-21 2008-04-17 Takayoshi Anan Current Confining Structure and Semiconductor Laser
CN101151776B (zh) * 2005-03-30 2010-07-21 奥普拓能量株式会社 半导体激光器件
JP2006286870A (ja) * 2005-03-31 2006-10-19 Fuji Photo Film Co Ltd 半導体レーザおよびそれを用いた光通信システム
JP4780993B2 (ja) * 2005-03-31 2011-09-28 三洋電機株式会社 半導体レーザ素子およびその製造方法
DE102006011284A1 (de) * 2006-02-28 2007-08-30 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7782920B2 (en) * 2008-12-08 2010-08-24 Coherent, Inc. Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
US4481631A (en) * 1981-06-12 1984-11-06 At&T Bell Laboratories Loss stabilized buried heterostructure laser
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser
JPS6187385A (ja) * 1984-10-05 1986-05-02 Nec Corp 埋め込み構造半導体レ−ザ
JPS6273687A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 半導体レ−ザ装置

Also Published As

Publication number Publication date
EP0273726A3 (en) 1988-10-05
US4845724A (en) 1989-07-04
EP0273726A2 (de) 1988-07-06
DE3786339D1 (de) 1993-07-29
JPH0531837B2 (de) 1993-05-13
JPS63164484A (ja) 1988-07-07
EP0273726B1 (de) 1993-06-23

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Legal Events

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