DE3687102T2 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE3687102T2
DE3687102T2 DE8686111185T DE3687102T DE3687102T2 DE 3687102 T2 DE3687102 T2 DE 3687102T2 DE 8686111185 T DE8686111185 T DE 8686111185T DE 3687102 T DE3687102 T DE 3687102T DE 3687102 T2 DE3687102 T2 DE 3687102T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686111185T
Other languages
English (en)
Other versions
DE3687102D1 (de
Inventor
Tadashi Fukuzawa
Naoki Chinone
Kazuhisa Uomi
Takashi Kajimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3687102D1 publication Critical patent/DE3687102D1/de
Application granted granted Critical
Publication of DE3687102T2 publication Critical patent/DE3687102T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0208—Semi-insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
DE8686111185T 1985-09-20 1986-08-12 Halbleiterlaser. Expired - Fee Related DE3687102T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60206444A JPS6267890A (ja) 1985-09-20 1985-09-20 半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3687102D1 DE3687102D1 (de) 1992-12-17
DE3687102T2 true DE3687102T2 (de) 1993-03-25

Family

ID=16523474

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686111185T Expired - Fee Related DE3687102T2 (de) 1985-09-20 1986-08-12 Halbleiterlaser.

Country Status (5)

Country Link
US (1) US4752934A (de)
EP (1) EP0215298B1 (de)
JP (1) JPS6267890A (de)
KR (1) KR900000022B1 (de)
DE (1) DE3687102T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
EP0264225B1 (de) * 1986-10-07 1994-01-19 Sharp Kabushiki Kaisha Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben
JPS63144589A (ja) * 1986-12-09 1988-06-16 Sharp Corp 半導体レ−ザ素子
JPS63150986A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63150985A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63177495A (ja) * 1987-01-16 1988-07-21 Sharp Corp 半導体レ−ザ素子
JPS63208296A (ja) * 1987-02-24 1988-08-29 Sharp Corp 半導体装置
JPS63271992A (ja) * 1987-04-28 1988-11-09 Sharp Corp 半導体レ−ザ素子
JPS63287082A (ja) * 1987-05-19 1988-11-24 Sharp Corp 半導体レ−ザ素子
JPS63299186A (ja) * 1987-05-29 1988-12-06 Hitachi Ltd 発光素子
JPH0775265B2 (ja) * 1988-02-02 1995-08-09 三菱電機株式会社 半導体レーザおよびその製造方法
US5164797A (en) * 1988-06-17 1992-11-17 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
US4987468A (en) * 1988-06-17 1991-01-22 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
JPH0777278B2 (ja) * 1988-12-09 1995-08-16 三菱電機株式会社 半導体レーザおよびその製造方法
JPH02196486A (ja) * 1989-01-24 1990-08-03 Mitsubishi Electric Corp 半導体レーザの製造方法
US5063569A (en) * 1990-12-19 1991-11-05 At&T Bell Laboratories Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces
JPH04291304A (ja) * 1991-03-20 1992-10-15 Fujitsu Ltd 光導波路および光信号の制御方法
US5406574A (en) * 1991-10-23 1995-04-11 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2677232B2 (ja) * 1995-02-23 1997-11-17 日本電気株式会社 長波長半導体レーザおよびその製造方法
US5661740A (en) * 1996-04-16 1997-08-26 The United States Of America As Represented By The Secretary Of The Army TEM mode quantum wire or well structure
US6369403B1 (en) * 1999-05-27 2002-04-09 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511371A (en) * 1978-07-10 1980-01-26 Mitsubishi Electric Corp Semiconductor laser system
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4594603A (en) * 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
JPS58225680A (ja) * 1982-06-23 1983-12-27 Nec Corp 半導体レ−ザ
JPS5944797B2 (ja) * 1982-07-28 1984-11-01 工業技術院長 半導体レ−ザ装置の製造方法
JPS5923584A (ja) * 1982-07-29 1984-02-07 Nec Corp 半導体レ−ザ
JPS607789A (ja) * 1983-06-28 1985-01-16 Agency Of Ind Science & Technol プレ−ナ型半導体発光装置
NL8304008A (nl) * 1983-11-22 1985-06-17 Philips Nv Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling.

Also Published As

Publication number Publication date
DE3687102D1 (de) 1992-12-17
EP0215298A3 (en) 1990-01-24
EP0215298B1 (de) 1992-11-11
US4752934A (en) 1988-06-21
KR870003593A (ko) 1987-04-18
JPS6267890A (ja) 1987-03-27
EP0215298A2 (de) 1987-03-25
KR900000022B1 (ko) 1990-01-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee