DE69109141T2 - Laserdiode mit stabilisiertem Transversal-Mode. - Google Patents

Laserdiode mit stabilisiertem Transversal-Mode.

Info

Publication number
DE69109141T2
DE69109141T2 DE69109141T DE69109141T DE69109141T2 DE 69109141 T2 DE69109141 T2 DE 69109141T2 DE 69109141 T DE69109141 T DE 69109141T DE 69109141 T DE69109141 T DE 69109141T DE 69109141 T2 DE69109141 T2 DE 69109141T2
Authority
DE
Germany
Prior art keywords
laser diode
transverse mode
stabilized transverse
stabilized
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69109141T
Other languages
English (en)
Other versions
DE69109141D1 (de
Inventor
Hideo Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Compound Semiconductor Devices Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69109141D1 publication Critical patent/DE69109141D1/de
Publication of DE69109141T2 publication Critical patent/DE69109141T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69109141T 1990-01-31 1991-01-31 Laserdiode mit stabilisiertem Transversal-Mode. Expired - Fee Related DE69109141T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023483A JP2778178B2 (ja) 1990-01-31 1990-01-31 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69109141D1 DE69109141D1 (de) 1995-06-01
DE69109141T2 true DE69109141T2 (de) 1995-08-31

Family

ID=12111775

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69109141T Expired - Fee Related DE69109141T2 (de) 1990-01-31 1991-01-31 Laserdiode mit stabilisiertem Transversal-Mode.

Country Status (4)

Country Link
US (1) US5065402A (de)
EP (1) EP0440471B1 (de)
JP (1) JP2778178B2 (de)
DE (1) DE69109141T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5383214A (en) * 1992-07-16 1995-01-17 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and a method for producing the same
JP2809978B2 (ja) * 1993-10-20 1998-10-15 株式会社東芝 半導体レ−ザ素子
JPH06268334A (ja) * 1993-03-16 1994-09-22 Mitsubishi Kasei Corp レーザーダイオード及びその製造方法
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JPH08125126A (ja) * 1994-10-19 1996-05-17 Mitsubishi Electric Corp 半導体装置
JPH0955558A (ja) * 1995-08-11 1997-02-25 Sharp Corp 半導体レーザ素子
JP3718548B2 (ja) * 1995-10-20 2005-11-24 ソニー株式会社 半導体発光装置の製造方法
SE506651C2 (sv) * 1996-02-27 1998-01-26 Ericsson Telefon Ab L M Begravd heterostruktur
JP3423203B2 (ja) * 1997-03-11 2003-07-07 シャープ株式会社 半導体レーザ素子の製造方法
TW336358B (en) 1997-10-14 1998-07-11 Ind Tech Res Inst Laser diode for digital versatile disk (DVD) and process for producing the same
WO2000052796A1 (fr) * 1999-03-04 2000-09-08 Nichia Corporation Element de laser semiconducteur au nitrure
JP4991025B2 (ja) * 1999-06-10 2012-08-01 日亜化学工業株式会社 窒化物半導体レーザ素子
EP1087480B1 (de) * 1999-09-27 2006-11-15 Sanyo Electric Co., Ltd. Halbleiterlaservorrichtung und Herstellungsverfahren
US6574260B2 (en) * 2001-03-15 2003-06-03 Corning Lasertron Incorporated Electroabsorption modulated laser
JP3797151B2 (ja) * 2001-07-05 2006-07-12 ソニー株式会社 レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置
JP4027126B2 (ja) * 2002-03-08 2007-12-26 シャープ株式会社 半導体レーザ素子およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766685A (en) * 1980-06-03 1982-04-22 Nec Corp Rib structure semiconductor laser
JP2555282B2 (ja) * 1986-08-08 1996-11-20 株式会社東芝 半導体レ−ザ装置及びその製造方法
JP2629678B2 (ja) * 1986-09-25 1997-07-09 三菱電機株式会社 半導体レーザ装置およびその製造方法
JPH01102982A (ja) * 1987-10-16 1989-04-20 Nec Corp 半導体レーザ装置
JP3015371B2 (ja) * 1988-01-20 2000-03-06 株式会社東芝 半導体レーザ
JPH01286479A (ja) * 1988-05-13 1989-11-17 Toshiba Corp 半導体レーザ装置
US4893313A (en) * 1988-03-14 1990-01-09 Kabushiki Kaisha Toshiba Semiconductor laser device which has a double-hetero structure having an optimal layer thickness
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置

Also Published As

Publication number Publication date
US5065402A (en) 1991-11-12
EP0440471B1 (de) 1995-04-26
EP0440471A3 (en) 1992-01-22
JP2778178B2 (ja) 1998-07-23
JPH03227088A (ja) 1991-10-08
EP0440471A2 (de) 1991-08-07
DE69109141D1 (de) 1995-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI

8339 Ceased/non-payment of the annual fee