DE69412693D1 - Laserdiode mit vertikalem Resonator - Google Patents

Laserdiode mit vertikalem Resonator

Info

Publication number
DE69412693D1
DE69412693D1 DE69412693T DE69412693T DE69412693D1 DE 69412693 D1 DE69412693 D1 DE 69412693D1 DE 69412693 T DE69412693 T DE 69412693T DE 69412693 T DE69412693 T DE 69412693T DE 69412693 D1 DE69412693 D1 DE 69412693D1
Authority
DE
Germany
Prior art keywords
laser diode
vertical resonator
resonator
vertical
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69412693T
Other languages
English (en)
Other versions
DE69412693T2 (de
Inventor
Koji Otsubo
Hajime Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69412693D1 publication Critical patent/DE69412693D1/de
Application granted granted Critical
Publication of DE69412693T2 publication Critical patent/DE69412693T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H01S5/18333—Position of the structure with more than one structure only above the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69412693T 1993-04-30 1994-04-28 Laserdiode mit vertikalem Resonator Expired - Fee Related DE69412693T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10340193A JPH06314854A (ja) 1993-04-30 1993-04-30 面型発光素子とその製造方法

Publications (2)

Publication Number Publication Date
DE69412693D1 true DE69412693D1 (de) 1998-10-01
DE69412693T2 DE69412693T2 (de) 1999-01-14

Family

ID=14353037

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412693T Expired - Fee Related DE69412693T2 (de) 1993-04-30 1994-04-28 Laserdiode mit vertikalem Resonator

Country Status (4)

Country Link
US (1) US5404370A (de)
EP (1) EP0622876B1 (de)
JP (1) JPH06314854A (de)
DE (1) DE69412693T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0714558B1 (de) * 1994-06-20 1999-01-20 Koninklijke Philips Electronics N.V. Indexgeführte lichtemittierende halbleiterdiode
JPH08116139A (ja) * 1994-08-22 1996-05-07 Mitsubishi Electric Corp 半導体レーザ装置
KR100363239B1 (ko) * 1995-05-15 2003-02-11 삼성전자 주식회사 레이저 다이오드 및 그 제조방법
DE19523267A1 (de) * 1995-06-27 1997-01-02 Bosch Gmbh Robert Lasermodul
JP2956553B2 (ja) * 1995-10-20 1999-10-04 日本電気株式会社 面発光レーザ及びその製造方法
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
JP2000022206A (ja) * 1998-07-01 2000-01-21 Oki Electric Ind Co Ltd 半導体発光装置
US6614059B1 (en) * 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
US6376269B1 (en) * 1999-02-02 2002-04-23 Agilent Technologies, Inc. Vertical cavity surface emitting laser (VCSEL) using buried Bragg reflectors and method for producing same
JP4076671B2 (ja) * 1999-04-14 2008-04-16 ローム株式会社 レーザビームプリンタ用光源装置
KR100475858B1 (ko) * 2002-04-01 2005-03-18 주식회사 테라스테이트 수직공진 표면 발광레이저
KR100590775B1 (ko) * 2004-12-08 2006-06-19 한국전자통신연구원 실리콘 발광 소자
KR100689501B1 (ko) * 2005-02-03 2007-03-02 삼성전자주식회사 광대역 반도체 광소자
KR101028206B1 (ko) * 2010-04-08 2011-04-11 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
JP6282094B2 (ja) 2013-11-27 2018-02-21 キヤノン株式会社 面発光レーザ、およびそれを用いた光干渉断層計
WO2018031582A1 (en) * 2016-08-08 2018-02-15 Finisar Corporation Etched planarized vcsel
JP2018186213A (ja) * 2017-04-27 2018-11-22 スタンレー電気株式会社 垂直共振器型発光素子
US11695093B2 (en) * 2018-11-21 2023-07-04 Analog Devices, Inc. Superlattice photodetector/light emitting diode
WO2021192672A1 (ja) * 2020-03-27 2021-09-30 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ、面発光レーザアレイ、電子機器及び面発光レーザの製造方法
WO2023233818A1 (ja) * 2022-05-30 2023-12-07 ソニーセミコンダクタソリューションズ株式会社 面発光素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
JPH02150079A (ja) * 1988-11-30 1990-06-08 Oki Electric Ind Co Ltd スーパールミネッセントダイオード
US5034958A (en) * 1990-04-19 1991-07-23 Bell Communications Research, Inc. Front-surface emitting diode laser
US5086430A (en) * 1990-12-14 1992-02-04 Bell Communications Research, Inc. Phase-locked array of reflectivity-modulated surface-emitting lasers
KR930009174A (ko) * 1991-10-05 1993-05-22 이헌조 반도체 레이저 스위칭 장치
US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5216686A (en) * 1992-02-03 1993-06-01 Motorola, Inc. Integrated HBT and VCSEL structure and method of fabrication
US5274655A (en) * 1992-03-26 1993-12-28 Motorola, Inc. Temperature insensitive vertical cavity surface emitting laser
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
US5295147A (en) * 1992-12-22 1994-03-15 Photonics Research Incorporated Vertical cavity, surface-emitting laser with expanded cavity

Also Published As

Publication number Publication date
EP0622876B1 (de) 1998-08-26
DE69412693T2 (de) 1999-01-14
EP0622876A1 (de) 1994-11-02
JPH06314854A (ja) 1994-11-08
US5404370A (en) 1995-04-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee