DE69201908T2 - Laserdiode mit zu den Epitaxieschichten im wesentlichen senkrecht verlaufendem Ausgangsstrahl. - Google Patents

Laserdiode mit zu den Epitaxieschichten im wesentlichen senkrecht verlaufendem Ausgangsstrahl.

Info

Publication number
DE69201908T2
DE69201908T2 DE69201908T DE69201908T DE69201908T2 DE 69201908 T2 DE69201908 T2 DE 69201908T2 DE 69201908 T DE69201908 T DE 69201908T DE 69201908 T DE69201908 T DE 69201908T DE 69201908 T2 DE69201908 T2 DE 69201908T2
Authority
DE
Germany
Prior art keywords
laser diode
output beam
epitaxial layers
essentially perpendicular
running essentially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201908T
Other languages
English (en)
Other versions
DE69201908D1 (de
Inventor
Masao Makiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69201908D1 publication Critical patent/DE69201908D1/de
Publication of DE69201908T2 publication Critical patent/DE69201908T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
DE69201908T 1991-05-15 1992-05-15 Laserdiode mit zu den Epitaxieschichten im wesentlichen senkrecht verlaufendem Ausgangsstrahl. Expired - Fee Related DE69201908T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10995291 1991-05-15
JP4014689A JPH0555703A (ja) 1991-05-15 1992-01-30 面発光レーザ装置

Publications (2)

Publication Number Publication Date
DE69201908D1 DE69201908D1 (de) 1995-05-11
DE69201908T2 true DE69201908T2 (de) 1995-08-03

Family

ID=26350700

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201908T Expired - Fee Related DE69201908T2 (de) 1991-05-15 1992-05-15 Laserdiode mit zu den Epitaxieschichten im wesentlichen senkrecht verlaufendem Ausgangsstrahl.

Country Status (4)

Country Link
US (1) US5309468A (de)
EP (1) EP0514283B1 (de)
JP (1) JPH0555703A (de)
DE (1) DE69201908T2 (de)

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* Cited by examiner, † Cited by third party
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JPH0575207A (ja) * 1991-09-13 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> 共振器型半導体光装置及びその製法
JP3828179B2 (ja) * 1995-05-12 2006-10-04 富士通株式会社 半導体光検出装置およびその製造方法
JPH0927611A (ja) * 1995-07-11 1997-01-28 Seiko Epson Corp 光検出部を備えた面発光型半導体レーザ及びその製造方法並びにそれを用いたセンサ
US5848088A (en) * 1995-07-11 1998-12-08 Seiko Epson Corporation Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same
DE19527026C2 (de) * 1995-07-24 1997-12-18 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
WO1997040558A1 (en) * 1996-04-22 1997-10-30 W.L. Gore & Associates, Inc. Vertical cavity lasers with monolithically integrated refractive microlenses
US5925898A (en) * 1996-07-18 1999-07-20 Siemens Aktiengesellschaft Optoelectronic transducer and production methods
US5835517A (en) * 1996-10-04 1998-11-10 W. L. Gore & Associates, Inc. WDM multiplexer-demultiplexer using Fabry-Perot filter array
FR2768566B1 (fr) * 1997-09-12 2000-03-31 France Telecom Composants presentant une cavite optique definie par au moins un miroir courbe
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10042904C2 (de) * 2000-08-31 2003-03-13 Infineon Technologies Ag Halbleiterlaserchip mit integriertem Strahlformer und Verfahren zum Herstellen eines Halbleiterlaserchips mit integriertem Strahlformer
FR2824188B1 (fr) 2001-04-25 2003-12-12 Commissariat Energie Atomique Dispositif optique comportant une pluralite de cavites resonantes de longueurs differentes associees a differentes longueurs d'ondes
DE10208463B4 (de) * 2002-02-27 2012-04-05 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10262376B3 (de) * 2002-02-27 2015-10-01 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterlaservorrichtung und Halbleiterlaservorrichtung
US6658041B2 (en) * 2002-03-20 2003-12-02 Agilent Technologies, Inc. Wafer bonded vertical cavity surface emitting laser systems
GB2399942A (en) * 2003-03-24 2004-09-29 Univ Strathclyde Vertical cavity semiconductor optical devices
JP2005223111A (ja) * 2004-02-05 2005-08-18 Yokogawa Electric Corp 波長可変レーザー
JP4664725B2 (ja) * 2005-04-20 2011-04-06 日本オプネクスト株式会社 半導体レーザ素子
US20070002922A1 (en) * 2005-06-30 2007-01-04 Intel Corporation Retro-reflecting lens for external cavity optics
JP4861112B2 (ja) * 2006-09-27 2012-01-25 富士通株式会社 光半導体装置及びその製造方法
KR101382677B1 (ko) * 2007-04-16 2014-04-07 엘지이노텍 주식회사 웨이퍼 기판, 반도체 발광소자 및 웨이퍼 기판을 이용한 반도체 발광소자 제조방법
JP2010263085A (ja) * 2009-05-07 2010-11-18 Toshiba Corp 発光素子
CN109923742B (zh) * 2016-11-02 2021-10-22 索尼公司 发光元件及其制造方法
WO2018221042A1 (ja) * 2017-05-31 2018-12-06 ソニー株式会社 発光素子および発光素子の製造方法
WO2019017044A1 (ja) * 2017-07-18 2019-01-24 ソニー株式会社 発光素子及び発光素子アレイ
EP3731354B1 (de) * 2017-12-22 2023-01-25 Sony Group Corporation Lichtemittierendes element
JP2019165198A (ja) * 2018-03-19 2019-09-26 株式会社リコー 面発光レーザアレイ、検出装置およびレーザ装置
US11581698B2 (en) 2019-03-18 2023-02-14 Ricoh Company, Ltd. Optical device, lighting apparatus, measuring apparatus, part-inspecting apparatus, robot, electronic device, and movable object

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376390A (ja) * 1986-09-18 1988-04-06 Nec Corp 発光半導体素子
JPH01130578A (ja) * 1987-11-17 1989-05-23 Iwasaki Electric Co Ltd 発光ダイオード
JPH02113524A (ja) * 1988-10-24 1990-04-25 Hitachi Ltd 発光素子の製造方法
US4935939A (en) * 1989-05-24 1990-06-19 Liau Zong Long Surface emitting laser with monolithic integrated lens

Also Published As

Publication number Publication date
EP0514283A2 (de) 1992-11-19
EP0514283A3 (en) 1992-12-30
EP0514283B1 (de) 1995-04-05
DE69201908D1 (de) 1995-05-11
JPH0555703A (ja) 1993-03-05
US5309468A (en) 1994-05-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee