WO2018221042A1 - 発光素子および発光素子の製造方法 - Google Patents
発光素子および発光素子の製造方法 Download PDFInfo
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- WO2018221042A1 WO2018221042A1 PCT/JP2018/015716 JP2018015716W WO2018221042A1 WO 2018221042 A1 WO2018221042 A1 WO 2018221042A1 JP 2018015716 W JP2018015716 W JP 2018015716W WO 2018221042 A1 WO2018221042 A1 WO 2018221042A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
Definitions
- the present disclosure relates to a light emitting element and a method for manufacturing the light emitting element.
- a technique for making a reflecting mirror of a surface emitting laser into a concave curved surface shape is disclosed.
- the reflecting mirror of the surface emitting laser has a concave curved surface shape
- the light emitting device includes a stacked body.
- the stacked body includes an active layer and a first semiconductor layer and a second semiconductor layer that sandwich the active layer.
- the light emitting device further includes a current confinement layer having an opening, a first reflecting mirror having a concave curved surface on the first semiconductor layer side, and a second reflecting mirror on the second semiconductor layer side sandwiching the stacked body and the opening. And a vertical resonator.
- the first reflecting mirror has a concave curved surface that is curved to the opposite side of the laminated body.
- the light emitting element further includes a light transmissive substrate between the first reflecting mirror and the laminated body.
- the light-transmitting substrate has a convex first curved convex surface in contact with the first reflecting mirror on the surface opposite to the laminated body, and one or a plurality of second convex provided around the first convex portion.
- the one or more second convex portions have a height equal to or higher than the height of the first convex portion, and the end on the first reflecting mirror side has a convex curved surface shape.
- An end of the second convex portion on the first convex portion side has a convex curved surface shape protruding toward the first convex portion side.
- a first convex portion having a convex curved surface in contact with the first reflecting mirror is provided on the surface of the light transmissive substrate on the side opposite to the stacked body.
- the light-transmitting substrate is further provided with one or a plurality of second protrusions having a height equal to or higher than the height of the first protrusions around the first protrusions.
- the edge part by the side of the 1st reflector is convex curved surface shape.
- the mounting position of the light emitting element is determined by the self-alignment function using the convex curved surface of the second convex portion or the convex curved surface of the layer formed following the convex curved surface of the second convex portion.
- the first convex portion is protected by the second convex portion in the manufacturing process and the mounting process of the light emitting element.
- the method for manufacturing a light emitting element includes a resist formation step, a reflow step, and a convex portion formation step.
- a resist formation step first, a current confinement layer having an active layer, a stacked body including a first semiconductor layer and a second semiconductor layer sandwiching the active layer, and an opening on the first main surface of the light transmissive substrate.
- a light emitting element substrate provided with is prepared.
- a first resist layer is formed on the second main surface opposite to the first main surface of the light transmissive substrate at a position facing the opening, and around the position facing the opening.
- One or a plurality of second resist layers are formed.
- the surface of the first resist layer is formed into a convex curved surface, and the one or more second resist layers are Of the surface, at least an end portion on the first resist layer side is formed in a convex curved surface shape.
- dry etching using a resist etch back method is performed on the second main surface of the substrate by using the first resist layer and one or more second resist layers after reflow as a mask.
- a first convex portion having a convex curved surface is formed at a location where the first resist layer is formed, and a second convex portion having a convex curved shape is formed at a location where one or a plurality of second resist layers are formed.
- the width of each of the first resist layer and the one or more second resist layers is such that the height of each second convex portion is greater than or equal to the height of the first convex portion by reflow and resist etchback.
- reflow is performed on the first resist layer and the one or more second resist layers provided on the second main surface of the substrate.
- the surface of the first resist layer has a convex curved surface shape
- at least the end portion on the first resist layer side of the surface of one or a plurality of second resist layers has a convex curved surface shape.
- dry etching using a resist etch back method is performed using the first resist layer and the one or more second resist layers after reflow as a mask.
- the first convex portion having a convex curved surface is formed at the location where the first resist layer was formed, and at the location where the one or plural second resist layers were formed,
- One or a plurality of second protrusions having at least a convex curved surface at the end on the first resist layer side are formed.
- the width of each of the first resist layer and the one or more second resist layers is such that the height of each second convex portion is greater than the height of the first convex portion by reflow and resist etchback.
- the mounting position of the light emitting element is determined by the self-alignment function using the convex curved surface of the second convex portion or the convex curved surface of the layer formed following the convex curved surface of the second convex portion.
- the first convex portion is protected by the second convex portion in the manufacturing process and the mounting process of the light emitting element.
- the self-alignment by the convex curved surface of the second convex portion or the convex curved surface of the layer formed following the convex curved surface of the second convex portion can be determined by the function, and the first convex portion can be protected by the second convex portion in the manufacturing process and mounting process of the light emitting element.
- Position alignment with respect to the substrate can be performed with high accuracy, and a concave curved reflecting mirror can be protected.
- the effect of this indication is not necessarily limited to the effect described here, Any effect described in this specification may be sufficient.
- FIG. 8 is a diagram illustrating an example of a manufacturing process subsequent to FIG. 7. It is a figure showing an example of the manufacturing process following FIG. FIG.
- FIG. 10 is a diagram illustrating an example of a manufacturing process subsequent to FIG. 9. It is a figure showing an example of the manufacturing process following FIG.
- FIG. 12 is a diagram illustrating an example of a manufacturing process subsequent to FIG. 11. It is a figure showing the example of mounting to the wiring board of the light emitting element of FIG. It is a figure showing the modification of the light emitting element of FIG. It is a figure showing an example of the manufacturing process of the light emitting element of FIG. It is a figure showing the modification of the light emitting element of FIG. It is a figure showing an example of the manufacturing process of the light emitting element of FIG. It is a figure showing the modification of the light emitting element of FIG. It is a figure showing the modification of the light emitting element of FIG. It is a figure showing the upper surface structural example of the light emitting element of FIG. It is a figure showing the modification of the light emitting element of FIG. It is a figure showing the modification of the light emitting element of FIG.
- FIG. 1 illustrates a cross-sectional configuration example of the light emitting element 1.
- FIG. 2 illustrates a configuration example of the top surface of the light emitting element 1.
- the light-emitting element 1 is a top emission semiconductor laser that can be suitably applied to a thin application requiring low power consumption, a thin application requiring a large area, and the like.
- the light emitting element 1 includes a vertical resonator.
- the vertical resonator is configured to oscillate at a predetermined oscillation wavelength ⁇ 0 by two DBRs (distributed Bragg reflectors) facing each other in the normal direction of the substrate 11.
- the vertical resonator is composed of two DBR layers that sandwich the substrate 11, the stacked body 12, and the opening 13 ⁇ / b> A of the current confinement layer 13. That is, the substrate 11 is a substrate provided inside the vertical resonator, and is a substrate provided between one DBR layer and the stacked body 12.
- the two DBR layers are composed of a DBR layer 18 (first reflecting mirror) on the semiconductor layer 12a side described later and a DBR layer 16 (second reflecting mirror) on the semiconductor layer 12c side described later.
- the DBR layer 18 is formed in contact with the back surface of the substrate 11.
- the stacked body 12 includes, for example, an active layer 12b and two semiconductor layers that sandwich the active layer 12b.
- the two semiconductor layers are composed of a semiconductor layer 12a near the substrate 11 and a semiconductor layer 12c separated from the substrate 11.
- the light emitting element 1 includes, for example, a semiconductor layer 12a, an active layer 12b, a semiconductor layer 12c, a current confinement layer 13, an electrode layer 14, electrode pads 15, 17 and a DBR layer 16 on a substrate 11 in this order from the substrate 11 side. I have.
- the light emitting element 1 further includes, for example, a DBR layer 18 and a metal layer 19 on the back surface side of the substrate 11 in this order from the substrate 11 side.
- the stacked body 12 may have, for example, a contact layer on the outermost surface on the semiconductor layer 12c side for bringing the semiconductor layer 12c and the electrode layer 14 into ohmic contact with each other.
- the contact layer may be a layer formed by doping a high-concentration impurity with respect to the outermost surface of the semiconductor layer 12c, or may be formed on the outermost surface of the semiconductor layer 12c formed separately from the semiconductor layer 12c. It may be a layer in contact.
- the substrate 11 is a crystal growth substrate used when epitaxially growing the stacked body 12.
- the substrate 11 and the laminate 12 are made of a gallium nitride based semiconductor.
- the substrate 11 is a light transmissive substrate, for example, a GaN substrate.
- the stacked body 12 is made of, for example, GaN, AlGaN, AlInN, GaInN, AlGaInN, or the like.
- the semiconductor layer 12a is made of, for example, GaN.
- the semiconductor layer 12a includes, for example, silicon (Si) as an n-type impurity. That is, the semiconductor layer 12a is an n-type semiconductor layer.
- the semiconductor layer 12c is made of, for example, GaN.
- the semiconductor layer 12c contains, for example, magnesium (Mg), zinc (Zn), etc. as p-type impurities. That is, the semiconductor layer 12c is a p-type semiconductor layer.
- the active layer 12b has, for example, a quantum well structure. As a kind of quantum well structure, a single quantum well structure (QW structure) or a multiple quantum well structure (MQW structure) is mentioned, for example.
- the quantum well structure has a structure in which well layers and barrier layers are alternately stacked.
- the well layer and the barrier layer for example, (In y Ga (1-y) N, GaN), (In y Ga (1-y) N, In z Ga (1-z) N) [where, y> z], (In y Ga (1-y) N, AlGaN), and the like.
- the current confinement layer 13 is a layer for constricting the current injected into the active layer 12b.
- the current confinement layer 13 is configured by, for example, an insulating layer having an opening 13A.
- the insulating layer is formed, for example, in contact with the outermost surface of the stacked body 12, and is made of an inorganic material such as SiO2.
- the insulating layer may be constituted by a high resistance region formed by injecting impurities into the stacked body 12 from the semiconductor layer 12c side of the stacked body 12.
- the light emitting element 1 may include a device having a function equivalent to that of the current confinement layer 13 instead of the current confinement layer 13.
- the light emitting element 1 may include, for example, a contact layer having the same size as the opening 13A between the semiconductor layer 12c and the electrode layer 14. Such a contact layer is formed, for example, by forming a contact layer over the entire surface of the semiconductor layer 12c, and then selectively etching by a RIE (Reactive Ion Etching) method or the like. By providing such a contact layer, current confinement can be performed.
- the light emitting element 1 is formed by, for example, forming a layered body 12 in a cylindrical shape by masking a portion of the layered body 12 that becomes the light emitting unit 10 and performing dry etching, and then forming the columnar layered body 12.
- the opening 13A has, for example, a circular shape.
- the diameter of the opening 13A is, for example, about 10 ⁇ m.
- the electrode layer 14 is in contact with the surface of the stacked body 12 exposed at the bottom surface of the opening 13A of the current confinement layer 13.
- the electrode layer 14 is made of, for example, a transparent conductive material. Examples of the transparent conductive material used for the electrode layer 14 include ITO (Indium Tin Oxide).
- the electrode pad 15 is electrically connected to an external electrode or circuit, and is electrically connected to the electrode layer 14. For example, the electrode pad 15 is in contact with a portion of the electrode layer 14 that is not opposed to the opening 13A.
- the electrode pad 15 is made of, for example, Pd / Ti / Pt / Au, Ti / Pd / Au, Ti / Ni / Au, Ni / Au, or the like.
- the electrode pad 17 is electrically connected to an external electrode or circuit, and is electrically connected to the semiconductor layer 12a.
- the current confinement layer 13 has an opening 13B in a region around the vertical resonator.
- the stacked body 12 has a groove at a position facing the opening 13B, and the semiconductor layer 12a is exposed on the bottom surface of the groove.
- the electrode pad 17 is in contact with the semiconductor layer 12 a through the opening 13 ⁇ / b> B of the current confinement layer 13 and the groove of the stacked body 12.
- the electrode pad 17 is in contact with a portion of the semiconductor layer 12c that is not opposed to the opening 13A.
- the electrode pad 17 is made of, for example, Pd / Ti / Pt / Au, Ti / Pd / Au, Ti / Ni / Au, or the like.
- the electrode pad 17 may be electrically connected to the semiconductor layer 12a via another member.
- the electrode pad 17 may be electrically connected to the semiconductor layer 12a via the substrate 11. In that case, the electrode pad 17 may be provided on the back surface (a flat surface 11S described later) of the substrate 11.
- the DBR layers 16 and 18 are each composed of, for example, a dielectric multilayer film.
- the dielectric multilayer film has a structure in which low refractive index layers and high refractive index layers are alternately stacked.
- the thickness of the low refractive index layer is preferably an odd multiple of ⁇ 0 / 4n 1 (n 1 is the refractive index of the low refractive index layer).
- the thickness of the high refractive index layer is preferably an odd multiple of ⁇ 0 / 4n 2 (n 2 is the refractive index of the high refractive index layer).
- Examples of the material for the dielectric multilayer film constituting the DBR layers 16 and 18 include SiO 2 , SiN, Al 2 O 3 , Nb 2 O 5 , Ta 2 O 5 , TiO 2 , AlN, MgO, and ZrO 2. It is done.
- combinations of the low refractive index layer and the high refractive index layer include, for example, SiO 2 / SiN, SiO 2 / Nb 2 O 5 , SiO 2 / ZrO 2 , SiO 2 2 / AlN, SiO 2 / Ta 2 O 5 and the like.
- the dielectric multilayer film constituting the DBR layers 16 and 18 is formed by a film forming method such as sputtering, CVD, or vapor deposition.
- the metal layer 19 is formed in contact with the surface of the DBR layer 18.
- the metal layer 19 is formed in contact with the entire surface of the DBR layer 18.
- the metal layer 19 is formed following the surface of the DBR layer 18.
- the metal layer 19 is made of, for example, Pd / Ti / Pt / Au, Ti / Pd / Au, Ti / Ni / Au, or the like.
- the metal layer 19 may be electrically connected to the semiconductor layer 12a through the substrate 11 exposed in the opening of the DBR layer 18. Good. In that case, the metal layer 19 can have the same function as the electrode pad 17.
- the substrate 11 has a convex portion 11A (first convex portion) protruding on the opposite side to the laminated body 12 on the back surface.
- the convex portion 11A is provided at a position facing the opening 13A.
- the entire surface of the convex portion 11 ⁇ / b> A has a convex curved surface that protrudes on the opposite side to the laminate 12.
- the curvature radius of the surface of the convex portion 11A is preferably larger than the resonator length in the vertical resonator. This is because when the curvature radius of the surface of the convex portion 11A is equal to or less than the resonator length in the vertical resonator, the optical field confinement becomes excessive and light loss is likely to occur.
- the substrate 11 further has a plurality of convex portions 11B (second convex portions) protruding on the opposite side to the laminated body 12 on the back surface.
- the plurality of convex portions 11B are provided so as to avoid a position facing the opening 13A, and specifically, are provided around the convex portion 11A.
- the plurality of convex portions 11B are arranged at point-symmetrical positions around the convex portion 11A.
- Each convex portion 11 ⁇ / b> B has an island shape, for example, a circular shape, an elliptical shape, or a polygonal shape when viewed from the normal direction of the substrate 11.
- the convex part 11B has a height equal to or higher than the height of the convex part 11A, and at least the surface of the end part on the convex part 11A side has a convex curved surface.
- the entire surface of the convex portion 11 ⁇ / b> B may be a convex curved surface that protrudes on the opposite side of the laminate 12.
- the end of the convex portion 11B on the convex portion 11A side has a convex curved surface protruding toward the convex portion 11A.
- the heights of the convex portions 11A and 11B indicate the height from the flat surface 11S corresponding to the base of the convex portions 11A and 11B on the back surface of the substrate 11.
- the metal layer 19 is formed following the surface of the DBR layer 18. Therefore, a portion of the metal layer 19 that faces the convex portion 11 ⁇ / b> A is curved along the surface of the DBR layer 18, and constitutes a convex portion 10 ⁇ / b> A that protrudes on the opposite side of the stacked body 12. Further, in the metal layer 19, the portion facing the convex portion 11 ⁇ / b> B is also curved following the surface of the DBR layer 18, and constitutes the convex portion 10 ⁇ / b> B protruding to the opposite side of the stacked body 12.
- the convex portion 10B has a height equal to or higher than the height of the convex portion 10A, and the surface of the end portion on the convex portion 10A side has a convex curved surface shape.
- the entire surface of the convex portion 10 ⁇ / b> B has, for example, a convex curved shape that protrudes to the opposite side of the laminate 12.
- the height of the convex portions 10A and 10B refers to the height from the flat surface 11S corresponding to the base of the convex portion 11A and the convex portion 11B on the back surface of the substrate 11.
- FIG. 3 shows an example of the relationship between the lens diameter, the lens height, and the radius of curvature.
- the lens diameter refers to the diameter of the convex portion 11A and the convex portion 11B.
- the lens height refers to the height of the convex portions 11A and the convex portions 11B.
- the curvature radius refers to the curvature radius of the surface of the convex portion 11A and the convex portion 11B.
- the convex portion 11B has a height equal to or higher than the height of the convex portion 11A.
- the heights of the protrusions 11A and the protrusions 11B are formed by etching the substrate 11 using a reflowed island-shaped resist layer as a mask, as will be described later.
- the diameter of the reflowed island-shaped resist layer corresponds to the lens diameter in FIG. That is, by changing the diameter of the reflowed island-shaped resist layer, the height and the radius of curvature of the convex portions 11A and the convex portions 11B can be adjusted.
- the diameter of the island-shaped resist layer used for forming the convex portions 11B is smaller than the diameter of the island-shaped resist layer used for forming the convex portions 11A.
- the diameter of the island-shaped resist layer used for forming the convex portion 11A is 80 ⁇ m
- the diameter of the island-shaped resist layer used for forming the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less.
- the convex part 11B can be formed higher than the convex part 11A.
- the diameter of the convex portion 11A is 80 ⁇ m
- the diameter of the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is smaller than the curvature radius of the convex portion 11A.
- the diameter of the island-shaped resist layer used for forming the convex portion 11B is larger than the diameter of the island-shaped resist layer used for forming the convex portion 11A.
- the diameter of the island-shaped resist layer used for forming the convex portion 11A is 30 ⁇ m
- the diameter of the island-shaped resist layer used for forming the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less.
- the convex part 11B can be formed higher than the convex part 11A.
- the diameter of the convex portion 11A is 30 ⁇ m
- the diameter of the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is larger than the curvature radius of the convex portion 11A.
- the DBR layer 18 is formed at least following the surface of the convex portion 11A, and functions as a concave curved reflector for the vertical resonator.
- the DBR layer 18 has a concave curved shape that is curved on the opposite side to the stacked body 12.
- the DBR layer 18 may be formed following the entire surface including the surfaces of the convex portions 11A and 11B.
- FIG. 1 illustrates the case where the DBR layer 18 is formed following the entire surface including the surfaces of the convex portions 11A and 11B.
- the DBR layer 16 is formed following the surface of the electrode layer 14 and is formed in contact with the surface of the electrode layer 14. In the DBR layer 16, a portion of the DBR layer 16 that faces the opening 13A is substantially flat.
- the active layer 12 b is preferably disposed closer to the DBR layer 16 and the current confinement layer 13 than the DBR layer 18. This is because the optical field confinement in the active layer 12b is strengthened and laser oscillation is facilitated. Also, from the area center of gravity of the current confinement layer 13, it is preferable that the shortest distance D CI to the inner edge of the opening portion 13A meets the following expression. As a result, the region where the light reflected by the DBR layer 18 is collected is included in the region where the active layer 12b has gain by current injection, and stimulated emission of light from the carrier is promoted, and laser oscillation This is because it becomes easy.
- the derivation of the following equation is disclosed in, for example, H. Kogelnik and T. Li, “Laser Beams and Resonators”, Applied Optics / Vol. 5, No. 10 / October 1966. ⁇ 0 is also called a beam waist radius.
- FIG. 4 shows an example of a manufacturing procedure of the light emitting element 1.
- 5 to 13 show an example of the manufacturing process of the light emitting element 1.
- the laminated body 12 is formed on the surface (first main surface) of the substrate 11 by an epitaxial crystal growth method such as a MOCVD (Metal Organic Chemical Vapor Deposition) method (FIG. 5).
- MOCVD Metal Organic Chemical Vapor Deposition
- the current confinement layer 13 having the opening 13A is formed on the surface of the laminate 12 by, for example, CVD (chemical vapor deposition), sputtering, vapor deposition, or ion implantation (FIG. 6).
- the DBR layer 16 is formed on the electrode layer 14 by, for example, CVD, sputtering, or vapor deposition. (FIG. 6).
- an etching method such as a wet etching method or a dry etching method, or a pattern formation method such as a lift-off method is used.
- the electrode pad 15 is formed so as to be in contact with the end portion of the electrode layer 14 by, for example, vapor deposition (FIG. 7).
- an opening 13B is formed in the current confinement layer 13 by wet etching or dry etching, and a groove is formed in the stacked body 12 until the semiconductor layer 12a is exposed (FIG. 7).
- the electrode pad 17 is formed by, for example, vapor deposition (FIG. 7). At this time, the electrode pad 17 is formed so as to be in contact with the semiconductor layer 12a through the opening 13B formed in the current confinement layer 13 and the groove formed in the stacked body 12.
- the support substrate 22 is bonded to the surface including the electrode pads 15 and 17 through the adhesive layer 21.
- the back surface (second main surface) of the substrate 11 opposite to the front surface (first main surface) is mirror-finished by polishing with, for example, etching such as CMP (Chemical-Mechanical-Polishing) or a grinder ( FIG. 8, step S101).
- the thickness of the substrate 11 is preferably 100 ⁇ m or less.
- a resist pattern is formed on the back surface of the polished substrate 11.
- the resist layer 23A (first resist layer) is formed in an island shape at a position facing the opening 13A, and two or more resist layers 23B (second second) are formed around the position facing the opening 13A.
- a resist layer is formed in an island shape (FIG. 9, step S102).
- the resist layers 23A and 23B have, for example, a circular shape, an elliptical shape, or a polygonal shape when viewed from the normal direction of the support substrate 22.
- the widths R1, R2 of the resist layers 23A, 23B are different from each other.
- the widths R1 and R2 of the resist layers 23A and 23B are set so that the height of each convex portion 11B is equal to or higher than the height of the convex portion 11A by reflow and resist etchback described later.
- the widths R1 and R2 of the resist layers 23A and 23B are set based on the relationship shown in FIG. 3 so that the height of the convex portion 11B is equal to or higher than the height of the convex portion 11A.
- a design is assumed in which the diameter of the island-shaped resist layer 23B used for forming the convex portions 11B is smaller than the diameter of the island-shaped resist layer 23A used for forming the convex portions 11A.
- the width R1 of the resist layer 23A is 80 ⁇ m and the width R2 of the resist layer 23B is 30 ⁇ m or more and 70 ⁇ m or less.
- the convex portion 11B formed by the island-shaped resist layer 23B can be formed higher than the convex portion 11A formed by the island-shaped resist layer 23A.
- the diameter of the convex portion 11A is 80 ⁇ m
- the diameter of the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is smaller than the curvature radius of the convex portion 11A.
- the diameter of the island-shaped resist layer 23B used for forming the convex portion 11B is larger than the diameter of the island-shaped resist layer 23A used for forming the convex portion 11A.
- the width R1 of the resist layer 23A is set to 30 ⁇ m
- the width R2 of the resist layer 23B is set to 40 ⁇ m or more and 60 ⁇ m or less.
- the convex portion 11B formed by the island-shaped resist layer 23B can be formed higher than the convex portion 11A formed by the island-shaped resist layer 23A.
- the diameter of the convex portion 11A is 30 ⁇ m
- the diameter of the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is larger than the curvature radius of the convex portion 11A.
- step S103 reflow is performed on the resist layer 23A and the plurality of resist layers 23B (FIG. 10, step S103).
- the surface of the resist layer 23A is formed into a convex curved surface, and at least the end on the resist layer 23A side is formed into a convex curved surface among the surfaces of the plurality of resist layers 23B.
- the entire surface of the resist layers 23A and 23B is formed into a convex curved surface.
- the height of the resist layer 23B is equal to or higher than the height of the resist layer 23A.
- the reflow conditions vary depending on the material and thickness of the resist layers 23A and 23B, but are set to, for example, a temperature of about 150 ° C. to 200 ° C. and a time of about 5 minutes to 15 minutes.
- step S104 dry etching is performed on the substrate 11 using the resist layers 23A and 23B having convex curved surfaces as a mask. That is, dry etching using a resist etch back method is performed on the substrate 11 using the resist layers 23A and 23B after reflow as a mask. At this time, it is preferable to make the etching rate of the substrate 11 and the etching rates of the resist layers 23A and 23B as equal as possible. By using such a resist etch-back method, convex-curved convex portions 11A and 11B that closely resemble the surface shapes of the resist layers 23A and 23B can be formed on the back surface of the substrate 11.
- the convex portion 11A having a convex curved surface can be formed at a location where the resist layer 23A is formed, and at least an end portion on the convex portion 11A side at a location where each resist layer 23B is formed.
- a convex portion 11B having a convex curved surface can be formed. As a result, the height of each convex part 11B becomes more than the height of the convex part 11A.
- the DBR layer 18 is formed on the entire surface including the surfaces of the convex portions 11A and 11B by, for example, the CVD method, the sputtering method, or the vapor deposition method (FIG. 12, step S105).
- a metal layer 19 is formed on the entire surface of the DBR layer 18 by, for example, sputtering or vapor deposition (FIG. 12, step S105).
- the height of the portion facing the convex portion 11B (the convex portion 10B) is equal to or higher than the height of the portion facing the convex portion 11A (the convex portion 10A).
- the surface of the edge part by the side of the convex part 10A of the convex part 10B is a convex curve shape.
- the whole surface of the convex part 10B is convex convex shape.
- the manufacturing method of the light emitting element 1 is not restricted to said method.
- the support substrate 22 may be peeled after the back surface of the substrate 11 is mirror-finished, and the protrusions 11A and 11B, the DBR layer 18, the metal layer 19 and the like may be formed without the support substrate 22.
- FIG. 13 illustrates an example of mounting the light emitting element 1 on the wiring board 30.
- the wiring board 30 includes a plurality of electrode pads 31 on the surface.
- the in-plane layout of the plurality of electrode pads 31 is, for example, the same as the in-plane layout of the plurality of convex portions 11B (or convex portions 10B).
- the light emitting element 1 is mounted on the wiring board 30 with the plurality of convex portions 10B facing the wiring board 30 side.
- the plurality of convex portions 10 ⁇ / b> B are fixed to the plurality of electrode pads 31 through solder bumps 32.
- the light emitting element 1 is positioned by a self-alignment function using a convex curved surface of each convex portion 10B that is in contact with the solder bump 32 in a molten state. Therefore, the optical axis AX of the light emitting element 1 can be accurately arranged at a predetermined position with respect to the wiring board 30. Moreover, since the height of each convex part 10B is more than the height of the convex part 10A, for example, in the process of mounting the light emitting element 1 on the wiring board 30, each convex part 11B protects the convex part 11A. Can play a role.
- the stacked body 12 is made of a nitride-based semiconductor material, for example, blue laser light is emitted from the DBR layer 16 to the outside.
- the metal layer 19 is electrically connected to the semiconductor layer 12a through the substrate 11 exposed in the opening of the DBR layer 18, The metal layer 19 can have the same function as the electrode pad 17.
- the reflecting mirror of the surface emitting laser has a concave curved surface shape
- an opening is formed by etching a portion of the substrate immediately below the light emitting element, and lens processing is performed on the bottom surface of the opening.
- the lens can be protected, but in order to form the opening in the substrate, it is necessary to dig the substrate to a depth of several tens to several hundreds of ⁇ m. Therefore, technical difficulty is high and it is not suitable for mass production.
- the bottom of the opening is not suitable for lens formation. Further, when mounting the light emitting element, it is not known whether or not a portion of the substrate corresponding to the edge of the opening can be used for positioning.
- the convex surface 11A having a convex curved surface that is in contact with the DBR layer 18 and faces the opening 13A is provided on the surface of the substrate 11 opposite to the stacked body 12.
- the substrate 11 is further provided with a plurality of convex portions 11B having a height equal to or higher than the height of the convex portions 11A around the convex portions 11A.
- the surface of the end part on the convex part 11A side is a convex curved surface.
- the mounting position of the light emitting element 1 is determined by the self-alignment function by the convex curved surface of the metal layer 19 (convex portion 10B) formed following the convex curved surface of the convex portion 11B. Further, the convex portion 11A is protected by the convex portion 11B during the manufacturing process and the mounting process of the light emitting element 1. As a result, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy, and the DBR layer 18 can be protected.
- the convex portion 11A and each convex portion 10B have an island shape.
- each convex portion 11B be higher than the convex portion 11A, but also the convex portion 11A and each convex portion 11B can be formed. It can be formed in a lump.
- the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy without increasing the number of manufacturing procedures, and the DBR layer 18 can be protected.
- the convex portions 11A and the respective convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- the substrate 11 is a GaN substrate.
- each convex portion 11B be higher than the convex portion 11A, but also the convex portion 11A and Each convex part 11B can be formed in a lump.
- the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy without increasing the number of manufacturing procedures, and the DBR layer 18 can be protected.
- the convex portions 11A and the respective convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- reflow is performed on the island-shaped resist layer 23A and the plurality of island-shaped resist layers 23B provided on the back surface of the substrate 11 in the manufacturing process.
- the surface of the resist layer 23A has a convex curved surface shape
- at least the end portion on the resist layer 23A side of the surface of the plurality of resist layers 23B has a convex curved surface shape.
- dry etching using a resist etch back method is performed using the resist layer 23A and the plurality of resist layers 23B after reflow as a mask.
- the convex-curved convex portion 11A is formed at the location where the resist layer 23A was formed, and at least the end on the resist layer 23A side at the location where the plurality of resist layers 23B were formed.
- a plurality of convex portions 11B having a convex curved surface are formed.
- the widths R1 and R2 of the resist layer 23A and the plurality of resist layers 23B are set so that the height of each convex portion 11B is equal to or higher than the height of the convex portion 11A by reflow and resist etchback.
- the mounting position of the light emitting element 1 is determined by the self-alignment function by the convex curved surface of the metal layer 19 formed following the convex curved surface of the convex portion 11B. Further, the convex portion 11A is protected by the convex portion 11B during the manufacturing process and the mounting process of the light emitting element 1. Therefore, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy without increasing the manufacturing procedure, and the DBR layer 18 can be protected. In addition, since the convex portions 11A and the respective convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- one resist layer 23A is formed, two or more resist layers 23B are formed, and the resist layer 23A and each resist layer 23B are formed in an island shape.
- the height of each convex part 11B can be made higher than the height of the convex part 11A only by setting the respective widths R1, R2 of the resist layer 23A and the plurality of resist layers 23B to desired values. Therefore, the alignment with respect to the light emitting element 1 wiring substrate 30 can be performed with high accuracy without increasing the manufacturing procedure, and the DBR layer 18 can be protected.
- the convex portions 11A and the respective convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- FIG. 14 illustrates a modification of the light emitting element 1.
- the convex portion 11B has a ring shape.
- the convex portion 11B has, for example, an annular shape, an elliptical ring shape, or a polygonal ring shape.
- the convex portion 11A is disposed in the opening of the convex portion 11B.
- the convex portion 11B is provided to avoid the position facing the opening 13A, and is provided around the convex portion 11A.
- the convex portion 11B is disposed at a point-symmetrical position with the convex portion 11A as the center.
- the convex portion 11B has a height equal to or higher than the height of the convex portion 11A, and at least the surface of the end portion on the convex portion 11A side (end portion on the inner peripheral side) has a convex curved surface shape.
- the entire surface of the convex portion 11B may have a convex curved shape that protrudes to the opposite side of the stacked body 12 in the width direction of the convex portion 11B.
- the height of the convex portion 11B is formed by etching the substrate 11 using a reflowed ring-shaped resist layer as a mask, as will be described later.
- the width of the reflowed ring-shaped resist layer corresponds to the lens diameter in FIG. That is, by changing the width of the reflowed ring-shaped resist layer, the height of the convex portion 11B and the radius of curvature in the width direction can be adjusted.
- the width of the ring-shaped resist layer used for forming the convex portion 11B is smaller than the diameter of the island-shaped resist layer used for forming the convex portion 11A.
- the diameter of the island-shaped resist layer used for forming the convex portion 11A is 80 ⁇ m
- the width of the ring-shaped resist layer used for forming the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less.
- the convex part 11B can be formed higher than the convex part 11A.
- the diameter of the convex portion 11A is 80 ⁇ m
- the width of the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is smaller than the curvature radius of the convex portion 11A.
- the width of the ring-shaped resist layer used for forming the convex portion 11B is larger than the diameter of the island-shaped resist layer used for forming the convex portion 11A.
- the diameter of the island-shaped resist layer used for forming the convex portion 11A is 30 ⁇ m
- the width of the ring-shaped resist layer used for forming the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less.
- the convex part 11B can be formed higher than the convex part 11A.
- the diameter of the convex portion 11A is 30 ⁇ m
- the width of the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is larger than the curvature radius of the convex portion 11A.
- the convex portions 11A and 11B are formed as follows, for example. First, as shown in FIG. 8, the back surface of the substrate 11 is mirror-finished. Next, a resist pattern is formed on the back surface of the polished substrate 11. As a result, a resist layer 23A (first resist layer) is formed in an island shape at a location facing the opening 13A, and a resist layer 23B (second resist layer) is formed around the location facing the opening 13A. It forms in a ring shape (FIG. 15).
- the widths R1 and R2 of the resist layers 23A and 23B are set by reflow and resist etch back so that the height of each convex portion 11B is equal to or higher than the height of the convex portion 11A. Specifically, the widths R1 and R2 of the resist layers 23A and 23B are set based on the relationship shown in FIG. 3 so that the height of the convex portion 11B is equal to or higher than the height of the convex portion 11A.
- the width of the ring-shaped resist layer 23B used for forming the convex portion 11B is smaller than the diameter of the island-shaped resist layer 23A used for forming the convex portion 11A.
- the width R1 of the resist layer 23A is 80 ⁇ m and the width R2 of the resist layer 23B is 30 ⁇ m or more and 70 ⁇ m or less.
- the convex portion 11B formed by the ring-shaped resist layer 23B can be formed higher than the convex portion 11A formed by the island-shaped resist layer 23A.
- the diameter of the convex portion 11A is 80 ⁇ m
- the width of the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is smaller than the curvature radius of the convex portion 11A.
- the width of the ring-shaped resist layer 23B used for forming the convex portion 11B is larger than the diameter of the island-shaped resist layer 23A used for forming the convex portion 11A.
- the width R1 of the resist layer 23A is set to 30 ⁇ m
- the width R2 of the resist layer 23B is set to 40 ⁇ m or more and 60 ⁇ m or less.
- the convex portion 11B formed by the island-shaped resist layer 23B can be formed higher than the convex portion 11A formed by the island-shaped resist layer 23A.
- the diameter of the convex portion 11A is 30 ⁇ m
- the width of the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is larger than the curvature radius of the convex portion 11A.
- the surface of the resist layer 23A has a convex curved surface
- at least the end portion on the resist layer 23A side of the surface of the resist layer 23B has a convex curved surface.
- the entire surface of the resist layer 23A has a convex curved surface shape
- the surface shape in the width direction of the resist layer 23B has a convex curved surface shape.
- the height of the resist layer 23B is equal to or higher than the height of the resist layer 23A.
- dry etching is performed on the substrate 11 using the resist layers 23A and 23B having a convex curved surface as a mask. That is, dry etching using a resist etch back method is performed on the substrate 11 using the resist layers 23A and 23B after reflow as a mask. At this time, it is preferable to make the etching rate of the substrate 11 and the etching rates of the resist layers 23A and 23B as equal as possible.
- convex-curved convex portions 11A and 11B that closely resemble the surface shapes of the resist layers 23A and 23B can be formed on the back surface of the substrate 11.
- the convex portion 11A having a convex curved surface is formed at a location where the resist layer 23A is formed, and at least the end portion (inner circumference) on the convex portion 11A side at the location where each resist layer 23B is formed. It is possible to form a convex portion 11B having a convex curved surface on the surface. As a result, the height of the convex portion 11B is equal to or higher than the height of the convex portion 11A.
- the convex surface 11A having a convex curved surface that is in contact with the DBR layer 18 and faces the opening 13A is provided on the surface of the substrate 11 opposite to the stacked body 12.
- the substrate 11 is further provided with an annular convex portion 11B having a height equal to or higher than the height of the convex portion 11A around the convex portion 11A.
- the surface of at least the end portion on the convex portion 11A side (end portion on the inner peripheral side) has a convex curved surface shape.
- the mounting position of the light emitting element 1 is determined by the self-alignment function by the convex curved surface of the metal layer 19 (convex portion 10B) formed following the convex curved surface of the convex portion 11B. Further, the convex portion 11A is protected by the convex portion 11B during the manufacturing process and the mounting process of the light emitting element 1. As a result, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy, and the DBR layer 18 can be protected.
- the convex portion 11A has an island shape
- the convex portion 10B has an annular shape.
- the surface of the resist layer 23A has a convex curved surface
- at least the surface of the resist layer 23A side end portion (the inner peripheral side end portion) of the resist layer 23B has a convex curved surface shape.
- dry etching using a resist etch back method is performed using the resist layer 23A and the resist layer 23B after reflow as a mask.
- a convex-shaped convex portion 11A is formed at a location where the resist layer 23A is formed, and at least an end portion (on the resist layer 23A side) at a location where the resist layer 23B is formed.
- a convex portion 11B having a convex curved surface is formed on the surface of the inner peripheral end portion.
- the widths R1 and R2 of the resist layer 23A and the resist layer 23B are set so that the height of each convex portion 11B is equal to or higher than the height of the convex portion 11A by reflow and resist etchback.
- the mounting position of the light emitting element 1 is determined by the self-alignment function by the convex curved surface of the metal layer 19 formed following the convex curved surface of the convex portion 11B.
- the convex portion 11A is protected by the convex portion 11B during the manufacturing process and the mounting process of the light emitting element 1. Therefore, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy without increasing the manufacturing procedure, and the DBR layer 18 can be protected.
- the convex portions 11A and the convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- one resist layer 23A is formed, one resist layer 23B is formed, and further, the resist layer 23A is formed in an island shape, and the resist layer 23B is formed in an annular shape. Formed.
- the height of the convex part 11B can be made higher than the height of the convex part 11A only by setting the respective widths R1, R2 of the resist layer 23A and the resist layer 23B to desired values. Therefore, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy without increasing the manufacturing procedure, and the DBR layer 18 can be protected.
- the convex portions 11A and the convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- FIG. 16 illustrates a modification of the light emitting element 1.
- two or more convex portions 11B are provided.
- the plurality of convex portions 11B have a shape and layout in which an annular convex portion is divided into a plurality of portions.
- Each convex portion 11B has a straight bar shape or a curved bar shape.
- the plurality of convex portions 11B are provided so as to avoid the position facing the opening 13A, and are provided around the convex portion 11A.
- the plurality of convex portions 11B are arranged at point-symmetrical positions around the convex portion 11A.
- Each convex portion 11B has a height equal to or higher than the height of the convex portion 11A, and at least the surface of the end portion on the convex portion 11A side has a convex curved surface shape.
- the entire surface of each convex portion 11B may have a convex curved shape that protrudes to the opposite side of the laminate 12 in the width direction of the convex portion 11B.
- the height of the convex portion 11B is formed by etching the substrate 11 using a reflowed rod-shaped resist layer as a mask, as will be described later.
- the width of the reflowed rod-shaped resist layer corresponds to the lens diameter in FIG. That is, by changing the width of the reflowed rod-shaped resist layer, the height of the protrusion 11B and the radius of curvature in the width direction can be adjusted.
- the width of the rod-shaped resist layer used for forming the convex portions 11B is made smaller than the diameter of the island-shaped resist layer used for forming the convex portions 11A.
- the diameter of the island-shaped resist layer used for forming the convex portion 11A is 80 ⁇ m
- the width of the rod-shaped resist layer used for forming the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less.
- the convex part 11B can be formed higher than the convex part 11A.
- the diameter of the convex portion 11A is 80 ⁇ m
- the width of the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is smaller than the curvature radius of the convex portion 11A.
- the width of the rod-shaped resist layer used for forming the convex portion 11B is larger than the diameter of the island-shaped resist layer used for forming the convex portion 11A.
- the diameter of the island-shaped resist layer used for forming the convex portion 11A is 30 ⁇ m
- the width of the rod-shaped resist layer used for forming the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less.
- the convex part 11B can be formed higher than the convex part 11A.
- the diameter of the convex portion 11A is 30 ⁇ m
- the width of the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is larger than the curvature radius of the convex portion 11A.
- the convex portions 11A and 11B are formed as follows, for example. First, as shown in FIG. 8, the back surface of the substrate 11 is mirror-finished. Next, a resist pattern is formed on the back surface of the polished substrate 11. As a result, the resist layer 23A (first resist layer) is formed in an island shape at a location facing the opening 13A, and each resist layer 23B (second resist layer) is formed around the location facing the opening 13A. Is formed so as to have a shape and layout in which the annular convex portion is divided into a plurality of portions (FIG. 17).
- the widths R1 and R2 of the resist layers 23A and 23B are set by reflow and resist etch back so that the height of each convex portion 11B is equal to or higher than the height of the convex portion 11A. Specifically, the widths R1 and R2 of the resist layers 23A and 23B are set based on the relationship shown in FIG. 3 so that the height of the convex portion 11B is equal to or higher than the height of the convex portion 11A.
- the width of the rod-shaped resist layer 23B used for forming the convex portion 11B is smaller than the diameter of the island-shaped resist layer 23A used for forming the convex portion 11A.
- the width R1 of the resist layer 23A is 80 ⁇ m and the width R2 of the resist layer 23B is 30 ⁇ m or more and 70 ⁇ m or less.
- the convex portion 11B formed by the rod-shaped resist layer 23B can be formed higher than the convex portion 11A formed by the island-shaped resist layer 23A.
- the diameter of the convex portion 11A is 80 ⁇ m
- the width of the convex portion 11B is 30 ⁇ m or more and 70 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is smaller than the curvature radius of the convex portion 11A.
- the width of the rod-shaped resist layer 23B used for forming the convex portion 11B is larger than the diameter of the island-shaped resist layer 23A used for forming the convex portion 11A.
- the width R1 of the resist layer 23A is set to 30 ⁇ m
- the width R2 of the resist layer 23B is set to 40 ⁇ m or more and 60 ⁇ m or less.
- the convex portion 11B formed by the rod-shaped resist layer 23B can be formed higher than the convex portion 11A formed by the island-shaped resist layer 23A.
- the diameter of the convex portion 11A is 30 ⁇ m
- the width of the convex portion 11B is 40 ⁇ m or more and 60 ⁇ m or less
- the curvature radius of the surface of the convex portion 11B is larger than the curvature radius of the convex portion 11A.
- the surface of the resist layer 23A has a convex curved surface
- at least the end portion on the resist layer 23A side of the surface of the resist layer 23B has a convex curved surface.
- the entire surface of the resist layer 23A has a convex curved surface shape
- the surface shape in the width direction of the resist layer 23B has a convex curved surface shape.
- the height of the resist layer 23B is equal to or higher than the height of the resist layer 23A.
- dry etching is performed on the substrate 11 using the resist layers 23A and 23B having a convex curved surface as a mask. That is, dry etching using a resist etch back method is performed on the substrate 11 using the resist layers 23A and 23B after reflow as a mask. At this time, it is preferable to make the etching rate of the substrate 11 and the etching rates of the resist layers 23A and 23B as equal as possible.
- convex-curved convex portions 11A and 11B that closely resemble the surface shapes of the resist layers 23A and 23B can be formed on the back surface of the substrate 11.
- the convex portion 11A having a convex curved surface is formed at a location where the resist layer 23A is formed, and at least the end portion (inner circumference) on the convex portion 11A side at the location where each resist layer 23B is formed. It is possible to form a convex portion 11B having a convex curved surface on the surface. As a result, the height of the convex portion 11B is equal to or higher than the height of the convex portion 11A.
- the convex surface 11A having a convex curved surface that is in contact with the DBR layer 18 and faces the opening 13A is provided on the surface of the substrate 11 opposite to the stacked body 12.
- the substrate 11 is further provided with a plurality of rod-shaped convex portions 11B having a height equal to or higher than the height of the convex portion 11A around the convex portion 11A.
- at least the surface of the end portion on the convex portion 11A side is a convex curved surface.
- the mounting position of the light emitting element 1 is determined by the self-alignment function by the convex curved surface of the metal layer 19 (convex portion 10B) formed following the convex curved surface of the convex portion 11B. Further, the convex portion 11A is protected by the convex portion 11B during the manufacturing process and the mounting process of the light emitting element 1. As a result, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy, and the DBR layer 18 can be protected.
- the convex portion 11A has an island shape
- the convex portion 10B has a bar shape.
- the convex portion 11B can be brought together. Can be formed.
- there is a gap between the two convex portions 10B adjacent to each other for example, when the convex portion 11A is polished by CMP or the like, the position where the polishing liquid is poured can be controlled using the gap. .
- the DBR layer 18 can be protected by the convex portions 11A and the convex portions 11B. Further, since the convex portions 11A and the convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- reflow is performed on the island-shaped resist layer 23A and the rod-shaped resist layer 23B provided on the back surface of the substrate 11 in the manufacturing process.
- the surface of the resist layer 23A has a convex curved surface shape
- at least the surface of the end portion on the resist layer 23A side of the resist layer 23B has a convex curved surface shape.
- dry etching using a resist etch back method is performed using the resist layer 23A and the resist layer 23B after reflow as a mask.
- a convex-curved convex portion 11A is formed at a location where the resist layer 23A is formed, and at least the end portion on the resist layer 23A side is formed at a location where the resist layer 23B is formed.
- a convex portion 11B having a convex curved surface is formed.
- the widths R1 and R2 of the resist layer 23A and the resist layer 23B are set so that the height of each convex portion 11B is equal to or higher than the height of the convex portion 11A by reflow and resist etchback.
- the mounting position of the light emitting element 1 is determined by the self-alignment function by the convex curved surface of the metal layer 19 formed following the convex curved surface of the convex portion 11B.
- the convex portion 11A is protected by the convex portion 11B during the manufacturing process and the mounting process of the light emitting element 1. Therefore, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy without increasing the manufacturing procedure, and the DBR layer 18 can be protected.
- the convex portions 11A and the convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- one resist layer 23A is formed, two or more resist layers 23B are formed, and further, the resist layer 23A is formed in an island shape, and the resist layer 23B is a rod. It is formed into a shape.
- the height of the convex part 11B can be made higher than the height of the convex part 11A only by setting the respective widths R1, R2 of the resist layer 23A and the resist layer 23B to desired values. Therefore, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy without increasing the manufacturing procedure, and the DBR layer 18 can be protected.
- the convex portions 11A and the convex portions 10B can be formed at the same time, roughness deterioration due to damage caused by unnecessary etching can be avoided. Thereby, diffraction loss due to roughness deterioration can be suppressed, and cracks due to stress concentration can be suppressed.
- FIG. 18 shows a modification of the light emitting element 1 of FIG.
- FIG. 19 illustrates an example of a top surface configuration of the light-emitting element 1 of FIG.
- FIG. 20 shows a modification of the light emitting element 1 of FIG.
- FIG. 21 shows a modification of the light emitting element 1 of FIG.
- the light-emitting element 1 of this modification corresponds to the light-emitting element 1 of the above-described embodiment in which bumps 20 (bump metal) are further provided at positions facing the convex portions 11B and 11C.
- the bump 20 is provided, for example, in a through hole that penetrates the DBR layer 18 and the metal layer 19.
- the height of the bump 20 is higher than the height of the convex portion 10A.
- the height of the bump 20 refers to the height from the flat surface 11 ⁇ / b> S corresponding to the base of the convex portion 11 ⁇ / b> A on the back surface of the substrate 11.
- the bump 20 exhibits the function similar to the convex parts 10B and 10C of the said embodiment. As a result, the alignment of the light emitting element 1 with respect to the wiring substrate 30 can be performed with high accuracy, and the DBR layer 18 can be protected.
- this indication can take the following composition.
- a stacked body including an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer; A current confinement layer having an opening; A first reflecting mirror on the first semiconductor layer side and a second reflecting mirror on the second semiconductor layer side, sandwiching the laminate and the opening; A light transmissive substrate provided between the first reflecting mirror and the laminate, The light-transmitting substrate is on the surface opposite to the laminate, A convex first convex portion in contact with the first reflecting mirror; One or a plurality of second portions provided around the first convex portion, having a height equal to or higher than the height of the first convex portion, and having an end on the first convex portion side having a convex curved surface shape.
- a light emitting element having a convex portion (2) The light emitting element according to (1), wherein the second reflecting mirror is formed following a surface including surfaces of the first convex portion and the second convex portion. (3) The light-emitting element according to (2), further including a metal layer formed following the surface of the second reflecting mirror. (4) The light transmissive substrate has a plurality of the second convex portions, Each said 2nd convex part has an island-like shape. (1) thru
- the light transmissive substrate has a plurality of the second convex portions, The light emitting element according to any one of (1) to (3), wherein the plurality of second protrusions have a shape and a layout in which an annular protrusion is divided into a plurality of parts. (7) The light emitting device according to any one of (1) to (6), further comprising a bump metal formed at a position facing the second convex portion. (8) The light-emitting element according to any one of (1) to (7), wherein the light transmissive substrate is a GaN substrate.
- a light emitting device comprising an active layer, a stacked body including a first semiconductor layer and a second semiconductor layer sandwiching the active layer, and a current confinement layer having an opening on a first main surface of a light transmissive substrate
- a first resist layer is formed on the second main surface opposite to the first main surface of the light transmissive substrate at a position facing the opening, and is opposed to the opening.
- a reflow step of forming a convex curved surface at least on the first resist layer side of the surface By performing dry etching using a resist etchback method using the first resist layer and the one or more second resist layers after the reflow as a mask, the second main surface of the substrate is subjected to A convex first convex portion is formed at a location where the first resist layer is formed, and at least an end on the first resist layer side at a location where one or a plurality of the second resist layers are formed.
- a convex portion forming step in which the portion forms a convex second curved convex portion In the resist forming step, the width of each of the first resist layer and the one or more second resist layers is set such that the height of each second convex portion is the first convex by the reflow and the resist etch back.
- the manufacturing method of the light emitting element set so that it may become more than the height of a part.
- one first resist layer is formed, two or more second resist layers are formed, and the first resist layer and each second resist layer are formed in an island shape.
- the manufacturing method of the light emitting element as described in (9).
- one first resist layer is formed, one second resist layer is formed, the first resist layer is formed in an island shape, and the second resist layer is formed
- one first resist layer is formed, two or more second resist layers are formed, and further, the first resist layer is formed in an island shape, and each of the second resist layers is formed.
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Abstract
Description
1.実施の形態
島状の凸部が垂直共振器の周囲に形成されている例
2.変形例
変形例A:環状の凸部の中心位置に垂直共振器が形成されている例
変形例B:環状の凸部を複数に分断したものが垂直共振器の周囲に形成されている例
変形例C:バンプが垂直共振器の周囲に形成されている例
[構成]
本開示の一実施の形態に係る発光素子1について説明する。図1は、発光素子1の断面構成例を表したものである。図2は、発光素子1の上面構成例を表したものである。
但し、
ω0 2≡(λ0/π){LOR(RDBR-LOR)}1/2
ここで、
λ0:発振波長
LOR:共振器長
RDBR:DBR層18の曲率半径(=凸部11Aの表面の曲率半径)
次に、本実施の形態に係る発光素子1の製造方法について説明する。図4は、発光素子1の製造手順の一例を表したものである。図5~図13は、発光素子1の製造過程の一例を表したものである。まず、基板11の表面(第1主面)上に、例えばMOCVD(Metal Organic Chemical Vapor Deposition :有機金属気相成長)法などのエピタキシャル結晶成長法により積層体12を形成する(図5)。次に、積層体12の表面に、例えば、CVD(chemical vapor deposition)法、スパッタ法、蒸着法またはイオンインプランテーションなどにより、開口13Aを有する電流狭窄層13を形成する(図6)。さらに、例えば、スパッタ法または蒸着法などにより、開口13Aを覆うように電極層14を形成したのち、例えば、CVD法、スパッタ法または蒸着法などにより、電極層14上にDBR層16を形成する(図6)。電極層14やDBR層16の成形には、例えば、ウエットエッチング法またはドライエッチング法などのエッチング法や、リフトオフ法などのパターン形成法を用いる。
図13は、発光素子1の、配線基板30への実装例を表したものである。配線基板30は、表面に複数の電極パッド31を備えている。複数の電極パッド31の面内レイアウトは、例えば、複数の凸部11B(または凸部10B)の面内レイアウトと共通している。発光素子1が、複数の凸部10Bを配線基板30側に向けて、配線基板30上に実装されている。複数の凸部10Bは、半田バンプ32を介して、複数の電極パッド31に固定されている。発光素子1は、実装時に、溶融状態の半田バンプ32に接する各凸部10Bの凸曲面によるセルフアライメント機能により、位置決めされる。そのため、発光素子1の光軸AXを配線基板30に対して所定の位置に精度よく配置することができる。また、各凸部10Bの高さが凸部10Aの高さ以上となっているので、例えば、発光素子1を配線基板30に実装する過程で、各凸部11Bが、凸部11Aを保護する役割を担うことができる。
このような構成の発光素子1では、半導体層12cと電気的に接続された電極パッド15と、半導体層12aと電気的に接続された電極パッド17との間に所定の電圧が印加されると、開口部13Aを通して活性層12bに電流が注入され、これにより電子と正孔の再結合による発光が生じる。この光は、一対のDBR層16およびDBR層18により反射され、所定の発振波長λ0でレーザ発振が生じる。そして、DBR層16から漏れ出た光がビーム状のレーザ光となって外部に出力される。このとき、積層体12が窒化物系の半導体材料によって構成されている場合には、例えば、青色系のレーザ光がDBR層16から外部に出射される。なお、DBR層18に部分的に開口が設けられている場合には、金属層19を、DBR層18の開口内に露出する基板11を介して半導体層12aと電気的に接続することにより、金属層19に対して、電極パッド17と同様の機能を持たせることができる。
次に、本実施の形態に係る発光素子1での効果について説明する。
次に、上記実施の形態の発光素子1の変形例について説明する。
図14は、発光素子1の一変形例を表したものである。本変形例では、凸部11Bが1つだけ設けられている。本変形例において、凸部11Bは、環形状となっている。凸部11Bは、例えば、円環形状、楕円環形状、多角環形状となっている。凸部11Aは、凸部11Bの開口内に配置されている。凸部11Bは、開口13Aと対向する位置を避けて設けられており、凸部11Aの周囲に設けられている。凸部11Bは、例えば、凸部11Aを中心として点対称の位置に配置されている。凸部11Bは、凸部11Aの高さ以上の高さを有し、少なくとも凸部11A側の端部(内周側の端部)の表面が凸曲面状となっている。凸部11Bの表面全体が、凸部11Bの幅方向において、積層体12とは反対側に突出した凸曲面状となっていてもよい。
図16は、発光素子1の一変形例を表したものである。本変形例では、凸部11Bが2つ以上設けられている。本変形例において、複数の凸部11Bは、環状の凸部が複数に分断された形状およびレイアウトとなっている。各凸部11Bは、真っ直ぐな棒形状、または、湾曲した棒形状となっている。複数の凸部11Bは、開口13Aと対向する位置を避けて設けられており、凸部11Aの周囲に設けられている。複数の凸部11Bは、例えば、凸部11Aを中心として点対称の位置に配置されている。各凸部11Bは、凸部11Aの高さ以上の高さを有し、少なくとも凸部11A側の端部の表面が凸曲面状となっている。各凸部11Bの表面全体が、凸部11Bの幅方向において、積層体12とは反対側に突出した凸曲面状となっていてもよい。
図18は、図1の発光素子1の一変形例を表したものである。図19は、図18の発光素子1の上面構成例を表したものである。図20は、図2の発光素子1の一変形例を表したものである。図21は、図2の発光素子1の一変形例を表したものである。
(1)
活性層と、前記活性層を挟み込む第1半導体層および第2半導体層とを含む積層体と、
開口部を有する電流狭窄層と、
前記積層体および前記開口部を挟み込む、前記第1半導体層側の凹曲面状の第1反射鏡および前記第2半導体層側の第2反射鏡と、
前記第1反射鏡と前記積層体との間に設けられた光透過性基板と
を備え、
前記光透過性基板は、前記積層体とは反対側の面に、
前記第1反射鏡に接する凸曲面状の第1凸部と、
前記第1凸部の周囲に設けられ、前記第1凸部の高さ以上の高さを有し、前記第1凸部側の端部が凸曲面状となっている1または複数の第2凸部と
を有する
発光素子。
(2)
前記第2反射鏡は、前記第1凸部および前記第2凸部の表面を含む面に倣って形成されている
(1)に記載の発光素子。
(3)
当該発光素子は、前記第2反射鏡の表面に倣って形成された金属層をさらに備えた
(2)に記載の発光素子。
(4)
前記光透過性基板は、複数の前記第2凸部を有し、
各前記第2凸部は、島状の形状となっている
(1)ないし(3)のいずれか一つに記載の発光素子。
(5)
前記光透過性基板は、1つの前記第2凸部を有し、
前記第2凸部は、円環形状となっている
(1)ないし(3)のいずれか一つに記載の発光素子。
(6)
前記光透過性基板は、複数の前記第2凸部を有し、
複数の前記第2凸部は、環状の凸部が複数に分断された形状およびレイアウトとなっている
(1)ないし(3)のいずれか一つに記載の発光素子。
(7)
前記第2凸部と対向する位置に形成されたバンプメタルをさらに備えた
(1)ないし(6)のいずれか一つに記載の発光素子。
(8)
前記光透過性基板は、GaN基板である
(1)ないし(7)のいずれか1つに記載の発光素子。
(9)
光透過性基板の第1主面上に、活性層と、前記活性層を挟み込む第1半導体層および第2半導体層とを含む積層体と、開口部を有する電流狭窄層とを備えた発光素子基板において、前記光透過性基板のうち、前記第1主面とは反対側の第2主面に、前記開口部と対向する箇所に第1レジスト層を形成するとともに、前記開口部と対向する箇所の周囲に1または複数の第2レジスト層を形成するレジスト形成ステップと、
前記第1レジスト層および1または複数の前記第2レジスト層に対して、リフローを行うことにより、前記第1レジスト層の表面を凸曲面状にするとともに、1または複数の前記第2レジスト層の表面のうち、少なくとも前記第1レジスト層側の端部を凸曲面状にするリフローステップと、
前記リフローを行った後の前記第1レジスト層および1または複数の前記第2レジスト層をマスクとして、レジストエッチバック法を用いたドライエッチングを行うことにより、前記基板の前記第2主面に、前記第1レジスト層が形成されていた箇所に凸曲面状の第1凸部を形成し、1または複数の前記第2レジスト層が形成されていた箇所に、少なくとも前記第1レジスト層側の端部が凸曲面状の第2凸部を形成する凸部形成ステップと
を含み、
前記レジスト形成ステップにおいて、前記第1レジスト層および1または複数の前記第2レジスト層のそれぞれの幅は、前記リフローおよび前記レジストエッチバックにより、各前記第2凸部の高さが前記第1凸部の高さ以上となるように設定される
発光素子の製造方法。
(10)
前記レジスト形成ステップにおいて、前記第1レジスト層を1つ形成するとともに、前記第2レジスト層を2つ以上形成し、さらに、前記第1レジスト層および各前記第2レジスト層を島状に形成する
(9)に記載の発光素子の製造方法。
(11)
前記レジスト形成ステップにおいて、前記第1レジスト層を1つ形成するとともに、前記第2レジスト層を1つ形成し、さらに、前記第1レジスト層を島状に形成するとともに、前記第2レジスト層を円環形状に形成する
(9)に記載の発光素子の製造方法。
(12)
前記レジスト形成ステップにおいて、前記第1レジスト層を1つ形成するとともに、前記第2レジスト層を2つ以上形成し、さらに、前記第1レジスト層を島状に形成するとともに、各前記第2レジスト層を、環状の凸部が複数に分断された形状およびレイアウトとなるように形成する
(9)に記載の発光素子の製造方法。
Claims (12)
- 活性層と、前記活性層を挟み込む第1半導体層および第2半導体層とを含む積層体と、
開口部を有する電流狭窄層と、
前記積層体および前記開口部を挟み込む、前記第1半導体層側の凹曲面状の第1反射鏡および前記第2半導体層側の第2反射鏡と、
前記第1反射鏡と前記積層体との間に設けられた光透過性基板と
を備え、
前記光透過性基板は、前記積層体とは反対側の面に、
前記第1反射鏡に接する凸曲面状の第1凸部と、
前記第1凸部の周囲に設けられ、前記第1凸部の高さ以上の高さを有し、前記第1凸部側の端部が凸曲面状となっている1または複数の第2凸部と
を有する
発光素子。 - 前記第2反射鏡は、前記第1凸部および前記第2凸部の表面を含む面に倣って形成されている
請求項1に記載の発光素子。 - 当該発光素子は、前記第2反射鏡の表面に倣って形成された金属層をさらに備えた
請求項2に記載の発光素子。 - 前記光透過性基板は、複数の前記第2凸部を有し、
各前記第2凸部は、島状の形状となっている
請求項1に記載の発光素子。 - 前記光透過性基板は、1つの前記第2凸部を有し、
前記第2凸部は、円環形状となっている
請求項1に記載の発光素子。 - 前記光透過性基板は、複数の前記第2凸部を有し、
複数の前記第2凸部は、環状の凸部が複数に分断された形状およびレイアウトとなっている
請求項1に記載の発光素子。 - 前記第2凸部と対向する位置に形成されたバンプメタルをさらに備えた
請求項2に記載の発光素子。 - 前記光透過性基板は、GaN基板である
請求項1に記載の発光素子。 - 光透過性基板の第1主面上に、活性層と、前記活性層を挟み込む第1半導体層および第2半導体層とを含む積層体と、開口部を有する電流狭窄層とを備えた発光素子基板において、前記光透過性基板のうち、前記第1主面とは反対側の第2主面に、前記開口部と対向する箇所に第1レジスト層を形成するとともに、前記開口部と対向する箇所の周囲に1または複数の第2レジスト層を形成するレジスト形成ステップと、
前記第1レジスト層および1または複数の前記第2レジスト層に対して、リフローを行うことにより、前記第1レジスト層の表面を凸曲面状にするとともに、1または複数の前記第2レジスト層の表面のうち、少なくとも前記第1レジスト層側の端部を凸曲面状にするリフローステップと、
前記リフローを行った後の前記第1レジスト層および1または複数の前記第2レジスト層をマスクとして、レジストエッチバック法を用いたドライエッチングを行うことにより、前記基板の前記第2主面に、前記第1レジスト層が形成されていた箇所に凸曲面状の第1凸部を形成し、1または複数の前記第2レジスト層が形成されていた箇所に、少なくとも前記第1レジスト層側の端部が凸曲面状の第2凸部を形成する凸部形成ステップと
を含み、
前記レジスト形成ステップにおいて、前記第1レジスト層および1または複数の前記第2レジスト層のそれぞれの幅は、前記リフローおよび前記レジストエッチバックにより、各前記第2凸部の高さが前記第1凸部の高さ以上となるように設定される
発光素子の製造方法。 - 前記レジスト形成ステップにおいて、前記第1レジスト層を1つ形成するとともに、前記第2レジスト層を2つ以上形成し、さらに、前記第1レジスト層および各前記第2レジスト層を島状に形成する
請求項9に記載の発光素子の製造方法。 - 前記レジスト形成ステップにおいて、前記第1レジスト層を1つ形成するとともに、前記第2レジスト層を1つ形成し、さらに、前記第1レジスト層を島状に形成するとともに、前記第2レジスト層を円環形状に形成する
請求項9に記載の発光素子の製造方法。 - 前記レジスト形成ステップにおいて、前記第1レジスト層を1つ形成するとともに、前記第2レジスト層を2つ以上形成し、さらに、前記第1レジスト層を島状に形成するとともに、各前記第2レジスト層を、環状の凸部が複数に分断された形状およびレイアウトとなるように形成する
請求項9に記載の発光素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US16/617,922 US11374384B2 (en) | 2017-05-31 | 2018-04-16 | Light-emitting device and method of manufacturing light-emitting device |
JP2019522015A JPWO2018221042A1 (ja) | 2017-05-31 | 2018-04-16 | 発光素子および発光素子の製造方法 |
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WO2023145271A1 (ja) * | 2022-01-27 | 2023-08-03 | ソニーグループ株式会社 | 面発光素子、光源装置及び面発光素子の製造方法 |
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