WO2011065517A1 - 表面出射型レーザ - Google Patents
表面出射型レーザ Download PDFInfo
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- WO2011065517A1 WO2011065517A1 PCT/JP2010/071207 JP2010071207W WO2011065517A1 WO 2011065517 A1 WO2011065517 A1 WO 2011065517A1 JP 2010071207 W JP2010071207 W JP 2010071207W WO 2011065517 A1 WO2011065517 A1 WO 2011065517A1
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
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- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
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- H01S5/4031—Edge-emitting structures
Definitions
- the present invention relates to a semiconductor laser element used for optical communication, an optical disk, a medical sensor, and the like, and an optical module using them.
- the semiconductor laser element which is this signal transmission light source is classified into three types according to the combination of the resonator direction (vertical resonance, horizontal resonance) and the surface from which the laser light is emitted (end surface emission, surface emission).
- the first type is a horizontal cavity surface emitting laser element
- the second type is a vertical cavity surface emitting laser element
- the third type is a horizontal cavity surface emitting laser element.
- the first horizontal resonator end-face emission laser has an optical waveguide formed in a horizontal direction within the substrate surface, and emits laser light from an end face obtained by cleaving the substrate.
- the cavity length can be increased to several hundreds of ⁇ m, a high output of several tens mW can be obtained even at a high temperature.
- the second vertical cavity surface emitting laser is a laser having a structure in which the resonator is formed in a direction perpendicular to the semiconductor substrate. Therefore, it is possible to arrange the light receiving member on the upper surface of the element, which is advantageous for increasing the density in the mounting substrate surface.
- the resonator length is determined by the crystal growth film thickness, there is a problem that it is very short and it is essentially difficult to obtain a high light output.
- the third horizontal cavity vertical surface emitting laser has a laser structure that combines the advantages of the above two lasers.
- This structure has a structure in which the resonator is formed in a horizontal direction in the substrate surface, and reflection mirrors inclined at 45 ° are integratedly formed in order to emit laser light from the front surface or the back surface of the substrate.
- Patent Document 1 discloses a horizontal cavity surface emitting laser having an active region of 10 to 100 ⁇ m, a distributed Bragg reflector, and an oblique mirror. Yes.
- Non-Patent Document 1 reports room temperature continuous oscillation characteristics of a horizontal cavity surface emitting laser including a circular lens formed at a position facing a reflecting mirror.
- Non-Patent Document 2 discloses a type of horizontal resonance in which both electrodes p and n and a light emitting surface are provided on the upper surface of a substrate. A surface emitting laser is disclosed. In this laser, the substrate surface side of the chip is bonded to the mounting substrate using AuSn or Ag epoxy, and then the p and n electrodes are connected to the p and n poles on the mounting substrate using gold wires.
- a gold wire is required for mounting.
- a wire length of about 1 mm is required.
- the signal strength of a high-frequency signal of 25 Gbps or more is significantly attenuated due to the influence of the inductance of the wire.
- these elements are disadvantageous for high-speed operation.
- it is necessary to stretch a gold wire to each element in multi-channel mounting, not only the mounting cost increases, but also there is a limit to high-density mounting in order to secure a region where the gold wire is stretched.
- the electrode area of the surface bonded to the laser submount is reduced as much as possible in order to reduce the parasitic capacitance accompanying the mounting. It needs to be small.
- the p-electrode portion needs to be large from the viewpoint of heat dissipation. Therefore, it has been difficult to achieve both capacity reduction and heat dissipation in an element having a conventional structure.
- the problem to be solved by the present invention is to provide a horizontal cavity surface emitting laser excellent in high speed and excellent in heat dissipation characteristics, and an optical module using the same.
- the horizontal cavity surface emitting laser of the present invention includes a laminated structure in which a first conductive type cladding layer, an active layer for generating light, and a second conductive type cladding layer are laminated in this order on a semiconductor substrate, and the light is faced.
- a resonator structure that reflects or resonates inward, a waveguide layer that guides light generated from the active layer in the resonator structure on the semiconductor substrate and in its extension region, and an optical waveguide layer A semiconductor provided along a side surface of the resonator structure portion and the reflection portion, the reflection portion being provided in a part and including a reflection portion that changes the optical path of the laser light emitted from the resonance structure portion and emits the laser light from the back surface of the semiconductor substrate
- the shape of the electrode (2) is characterized by having different widths in at least two places.
- the n-type electrode width of the side part of the resonator is widened to the optical resonator side than the n-type electrode width of the side part of the reflector, the distance between the p and n-type electrodes can be shortened. The resistance of the element is reduced. Accordingly, excellent high speed can be obtained.
- the flag-shaped dent is formed in the plane, the above-described simplicity of alignment and the effect of improving the alignment accuracy are obtained.
- the first electrode is directly formed on the first conductive layer laminated on the substrate, and does not include a pn junction immediately below the first conductive layer. For this reason, it is possible to keep the increase in the parasitic capacitance when the electrode area is enlarged extremely small. For this reason, it is possible to greatly improve the heat dissipation characteristics without increasing the parasitic capacitance by making a mounting structure in which a support member such as a metal member is brought into contact with the first electrode portion to form a heat dissipation path. is there. In addition, since the contact area between the electrode and the semiconductor can be increased, it is advantageous for reducing the contact resistance, and the resistance of the element can be reduced.
- the element can be flip-chip mounted on the optical element mounting board provided with the electric line, the high-frequency signal attenuation due to the inductance can be reduced as compared with the case where the gold wire is used.
- impedance matching can be designed by patterning the electric line, the degree of freedom in electrical design is greatly increased, which is advantageous for speeding up.
- FIG. 6 is a mounting plan view of a conventional horizontal cavity vertical emission laser.
- 1 is a bird's eye view of a surface of a horizontal resonator vertical emission laser according to a first embodiment of the present invention.
- FIG. 2 is a bird's eye view of the back surface of the horizontal resonator vertical emission laser according to the first embodiment of the present invention.
- 6 is a cross-sectional view showing a manufacturing process of the horizontal resonator vertical-emission laser device of Example 1.
- FIG. 6 is a cross-sectional view showing a manufacturing process of the horizontal resonator vertical-emission laser device of Example 1.
- FIG. 6 is a cross-sectional view showing a manufacturing process of the horizontal resonator vertical-emission laser device of Example 1.
- FIG. 6 is a cross-sectional view showing a manufacturing process of the horizontal resonator vertical-emission laser device of Example 1.
- FIG. 6 is a cross-sectional view showing a manufacturing process of the horizontal resonator vertical-emission laser device of Example 1.
- FIG. 6 is a cross-sectional view showing a manufacturing process of the horizontal resonator vertical-emission laser device of Example 1.
- FIG. 6 is a cross-sectional view showing a manufacturing process of the horizontal resonator vertical-emission laser device of Example 1.
- FIG. 1 is a detailed mounting diagram of a horizontal resonator vertical emission laser according to a first embodiment of the present invention.
- FIG. 1 is a detailed mounting diagram of a horizontal resonator vertical emission laser according to a first embodiment of the present invention.
- 1 is a bird's-eye view of mounting a horizontal resonator vertical-emission laser according to a first embodiment of the present invention.
- 1 is a cross-sectional view of a horizontal resonator vertical emission laser according to a first embodiment of the present invention mounted in a direction perpendicular to the optical axis. It is a bird's-eye view of the surface of the horizontal resonator vertical emission type laser which is the 2nd example of the present invention. It is a bird's-eye view of the back surface of the horizontal resonator vertical emission type laser which is the 2nd example of the present invention.
- FIG. 6 is a cross-sectional view of a horizontal resonator vertical emission type laser according to a second embodiment of the present invention mounted in a direction perpendicular to the optical axis.
- FIG. 10 is a mounting bird's-eye view of an array type vertical cavity vertical emitting laser according to a third embodiment of the present invention. It is a bird's-eye view of the horizontal resonator vertical emission type laser which is the 4th example of the present invention. It is a bird's-eye view of the horizontal resonator vertical emission type laser which is the 5th example of the present invention.
- FIGS. 1A and 1B A structural example of a conventional horizontal cavity vertical surface emitting laser will be described with reference to FIGS. 1A and 1B. The structure of this element will be described below.
- FIG. 1A is a cross section in the optical axis direction of the element.
- This element is formed on the n-type InP substrate 1.
- Light is generated by injecting current from the n-electrode 6 on the back surface of the substrate 1 and the p-electrode 5 on the surface of the substrate 1 to the InGaAsP active layer 2.
- the generated light propagates through the waveguide in which the diffraction grating 3 whose refractive index changes periodically is formed.
- Laser oscillation occurs when light is fed back by the diffraction grating.
- This laser is a so-called distributed feedback (DFB) laser.
- DFB distributed feedback
- the laser light thus generated is totally reflected by a 45 ° reflecting mirror 8 formed by etching one end of the waveguide, guided toward the back surface of the substrate, and emitted from the exit surface 9 on the back surface of the substrate.
- the device is die-bonded on the laser submount 11 with AuSn solder using the surface with the p-electrode 5 as an adhesive surface.
- the n-electrode is connected to the ground using a 50 ⁇ diameter gold wire 10 (not shown).
- FIG. 1B is a mounting plan view of the element.
- the element surface excluding the p electrode 13, the extraction pad 15, and the 45 ° reflecting mirror 14 is covered with a protective film of the SiO 2 insulating film 12.
- the cavity is formed in the substrate surface, so that the cavity length can be increased and high output is easy.
- the light receiving member can be disposed on the upper surface of the element, which is advantageous for high-density mounting.
- highly efficient optical coupling with the light receiving system is possible, which also saves power, reduces the number of parts in the module, and reduces the size. It can be said that it is an excellent element.
- FIGS. 2A, 2B, 3A-F, and 4A-C The structure of the horizontal resonator vertical emission laser of Example 1 will be described with reference to FIGS. 2A, 2B, 3A-F, and 4A-C.
- This embodiment is an example in which the present invention is applied to a horizontal resonator vertical emission laser having an element width of 250 ⁇ m.
- FIG. 2A is a bird's-eye view of the surface of the laser element
- FIG. 2B is a light emission surface of the laser element.
- an n-type semiconductor layer 21, an active layer 22, and a p-type semiconductor layer 23 are sequentially stacked on an Fe-doped semi-insulating semiconductor substrate 20 and are not shown.
- a diffraction grating layer is formed immediately above the active layer 22.
- the n-type semiconductor layer 21 uses n-doped InP
- the p-type semiconductor layer 23 uses p-doped InP
- the active layer 22 uses, for example, an InGaAlAs strained quantum well structure
- the diffraction grating layer uses GaInAsP. Etc. are used.
- it has the reflective mirror 29 which etched the semiconductor embedding layer.
- the semiconductor embedded layer may be made of the same semiconductor material as the semi-insulating Fe-doped InP or p-type cladding layer.
- a concave step is formed on the semi-insulating semiconductor substrate 20, and an integrated lens 30 formed by etching the semi-insulating semiconductor substrate 20 is integrated at the bottom of the step.
- the surface is provided with a non-reflective coating made of, for example, an alumina thin film.
- a p-type electrode 25 is formed on the resonator. Separately, the p-type semiconductor layer 23 and the active layer 22 were dug until reaching the n-type semiconductor layer 21, and an n-type electrode 27 was formed on the n-type semiconductor layer 21. At this time, as shown in FIG.
- the n-type electrode 27 is formed so as to surround the reflecting mirror 29 and the resonator portion, and the side portion of the reflecting mirror and the side portion of the resonator are separated.
- the electrodes are formed to have different widths.
- the distance between the p-type electrode 24 and the n-type electrode 27 can be reduced by changing the electrode width so that the resonator side portion of the n-type electrode 27 is recessed toward the resonator side. It is possible to reduce element resistance by shortening.
- FIGS. 3A to 3F are cross-sectional views illustrating manufacturing steps of the horizontal resonator vertical-emission laser device shown in the first embodiment. Note that the cross section is a cross section between AA shown in FIG. 2A.
- FIGS. 3A to 3F in the 1.3 ⁇ m wavelength InGaAlAs quantum well type horizontal cavity surface emitting laser element of this example, a semiconductor heterostructure processed in a stripe shape is embedded with a semi-insulating layer. It has a buried hetero structure (BH: Buried Hetero).
- BH Buried Hetero
- the periphery of the stripe-shaped optical waveguide portion in the buried hetero structure is buried with a high-resistance semi-insulating layer 87 in which Fe (iron) is doped with InP.
- the n-type semiconductor is doped with sulfur (Sulfur: element symbol S), and the p-type semiconductor is doped with zinc (Zinc: element symbol Zn).
- FIG. 3A shows a cross-sectional view of the laminated structure in this example.
- the semi-insulating semiconductor substrate 80 an Fe-doped InP semiconductor substrate is used.
- an n-type semiconductor layer 81 and an active layer 82 are used on the semi-insulating semiconductor substrate.
- this active layer 82 is composed of undoped InGaAlAs between the n-side optical confinement layer composed of n-type InGaAlAs and the p-type optical confinement layer composed of p-type InGaAlAs, and has a thickness of 7 nm. It has a multiple quantum well structure in which a well layer WL and a barrier layer BL having a thickness of 8 nm are stacked for five periods.
- Such a multiple quantum well structure is designed so as to realize sufficient characteristics as a laser.
- a diffraction grating layer 83 made of an InGaAsP-based material is embedded in a p-type semiconductor layer 84 made of p-type InP functioning as a cladding layer. Further, a contact layer 85 made of p-type InP is disposed thereon.
- the structures of the active layer 82 and the diffraction grating layer 83 were formed so that the oscillation wavelength of the DFB laser at room temperature was 1310 nm.
- the optical waveguide function is generated by sandwiching the active layer 82 with a clad layer having a lower refractive index, and the optical waveguide function is realized by a laminated structure of clad layer / active layer / cladding layer.
- a light confinement layer is provided with a quantum well layer interposed therebetween.
- the refractive index of the cladding layer is lower than the refractive index of the optical confinement layer.
- the n-type semiconductor layer 81 provided on the semi-insulating semiconductor substrate 80 plays this role as the first semiconductor layer functioning as the cladding layer.
- the polarity of the diffraction grating layer 83 was p-type. Such a structure is called a refractive index coupled DFB laser because only the refractive index periodically changes in the light propagation direction.
- the diffraction grating 83 is uniformly formed in the entire region of the DFB laser. However, a so-called phase in which the phase of the diffraction grating is shifted to a part of the region as necessary is described.
- a shift structure may be provided. In this embodiment, the DFB laser is used, but a DBR laser may be used.
- an n-type semiconductor substrate 81 (cladding layer) composed of an n-type InP substrate is grown on a semi-insulating substrate 80 in order to form a laser part structure, and then n-type.
- An active layer 82 composed of InGaAlAs is formed, which includes an optical confinement layer composed of InGaAlAs, a strained multiple quantum well layer composed of InGaAlAs, and an optical confinement layer composed of p-type InGaAlAs.
- a semiconductor multilayer body including a diffraction grating layer 83 made of InGaAsP is formed thereon. Further, a p-type semiconductor layer 84 (cladding layer) made of p-type InP is formed thereon, and then a contact layer 85 made of p-type InGaAs is formed.
- the carrier concentration by doping was set to 10 18 cm ⁇ 3 for both n-type and p-type.
- a silicon dioxide film is coated on the InP wafer having this multilayer structure to form a protective mask.
- the contact layer, the p-type cladding layer 84, the diffraction grating layer 83, the active layer 82, and a part of the n-type semiconductor layer 81 are etched to form an optical waveguide.
- etching for example, dry etching such as reactive ion etching (RIE) using chlorine-based gas, wet etching using bromine-based solution, or the like, or a combination of both methods may be used.
- RIE reactive ion etching
- a patterning mask was formed using a silicon oxide film 86 in a region where burying growth is performed.
- the semiconductor is not grown during the burying growth. Therefore, by using this patterning mask, it is possible to arbitrarily create a portion where the buried layer is not grown and a portion where the buried layer is not grown. This time, this patterning film was formed into a shape for forming an n-electrode, and a buried layer was grown so that an n-type semiconductor layer 81 was exposed in a region where an n-electrode was formed later.
- this sample was loaded into a crystal growth furnace, and a semi-insulating layer 87 composed of InP doped with Fe was grown at 600 ° C. using the MOVPE method.
- a buried heterostructure was formed by this etching step and a process of regrowing the buried layer.
- the buried heterostructure is a structure in which both sides of the optical waveguide in the light traveling direction are buried with a material capable of confining light.
- the material used for confinement is typically a high resistance material.
- a semi-insulating layer 87 made of high resistance InP doped with Fe is used.
- both the left and right sides with respect to the light traveling direction of the optical waveguide are embedded, and at the same time, the light emitting end of the optical waveguide is also embedded with the semi-insulating layer 87.
- the reason why the tip of the optical waveguide is embedded with InP is that the portion where the 45 ° tilt mirror is etched can be made of only InP material (Fe-InP) and is formed by etching. This is because it becomes easy to process the mirror completely smoothly.
- the silicon dioxide film 86 used as a selective growth mask for buried growth is removed to form a silicon nitride film (not shown) for an etching mask, and an inclination angle of 45 °.
- the reflective mirror 100 was formed by etching the semi-insulating layer 87 made of InP doped with Fe.
- CAIBE chemical assisted ion beam etching
- 45 ° etching is realized by etching the wafer at an angle of 45 °. did.
- etching method using CAIBE reactive ion beam etching (RIBE: Reactive ⁇ Ion ⁇ Beam Etching) of chlorine-based gas or wet etching may be used.
- the cross-sectional shape of the reflecting mirror 100 in the optical axis direction is a kale “re” shape, but it can also be a V shape or a structure consisting only of a slope.
- a groove for electrically separating elements from each other is formed on the wafer.
- the n-type electrode 102 was deposited on the digging portion 89 of the n-type semiconductor layer 81, and an alloy process was performed at 370 ° C. Thereafter, a p-electrode 101 (p-type electrode) was deposited on the p-type InGaAs contact layer 85. Furthermore, after the back surface of the substrate was polished to a thickness of 130 ⁇ m, a silicon nitride mask 90 was formed on the back surface of the substrate.
- etching was performed into a circular shape having a diameter of 125 ⁇ m and a depth of 20 ⁇ m by reactive ion etching using a mixed gas of methane and hydrogen.
- the silicon nitride mask 90 is placed so that the center position of the circular circle on the cylindrical shape intersects with the perpendicular ( ⁇ ) drawn immediately below from the intersection of the extension line ( ⁇ ) of the active layer 82 and the 45 ° tilt mirror. Forming. Note that the shape of the circle may be elliptical depending on the application.
- the silicon nitride mask 90 was removed, the silicon nitride mask above the columnar portion 91 surrounded by the portion dug into a donut shape was removed, and wet etching was performed. As a result, a corner was formed by etching from the surface of the columnar part, and the back surface InP lens 93 was formed. Note that the surface of the lens is covered with an antireflective film 92 in a later step. Since the convex lens is formed on the beam exit surface, it is possible to obtain a highly parallel beam with a narrow radiation angle.
- the horizontal cavity surface emitting laser element of this example had a beam divergence angle of 2 °, and obtained a narrow emission beam that became a circular beam spot with a diameter of 120 ⁇ m at a position of 100 ⁇ m from the laser back surface.
- FIGS. 4A to 4C show an example of an optical module package to which the present invention is applied.
- FIG. 4A is a detailed mounting diagram of the horizontal cavity vertical emitting laser according to the first embodiment of the present invention.
- FIG. 4B is a mounting bird's-eye view of the horizontal resonator vertical emission laser.
- FIG. 4C is a cross-sectional view of the horizontal resonator vertical emission type laser mounted in the vertical direction of the optical axis.
- an optical element mounting substrate 1008 and a photodiode 1004 on which a laser diode 1003 is junction-down mounted are mounted on a stem 1001.
- the diode 1003 is a horizontal resonator vertical emission laser.
- the laser diode 1003 is flip-chip mounted on the optical element mounting substrate.
- the submount was mounted on the stem 1001 by junction down mounting, and the laser submount on which the horizontal cavity surface emitting laser element LD was mounted was mounted on the stem 1001 with Ag epoxy.
- a quartz single mode optical fiber corresponding to 1.3 ⁇ m band light was used as the optical fiber 1009 to complete the alignment.
- the optical fiber support part 1006 and the cap 1007 were mounted, and the optical fiber was fixed.
- FIGS. 4B and 4C Details of the mounting are shown in FIGS. 4B and 4C.
- Electric lines 2001 and 2002 are formed on the optical element so as to satisfy desired impedance matching. This time, the 50 ⁇ system was used.
- a support portion 2004 formed in the laser diode 1003 is provided so as to fit into the shape of the digging groove 2006 on which the n-electrode is deposited. At the time of mounting, this support portion is fitted into the digging groove 2006 so that the positioning can be performed easily.
- FIG. 4C shows a cross-sectional view in the direction perpendicular to the optical axis of the mounted element. As shown in the figure, the fitting support portion is made of solder 2014 and is designed to contact the n-type electrode.
- the fitting support portion may be formed of a metal material having good thermal conductivity such as copper or an alloy of copper and tungsten.
- the portion where the support portion contacts does not include a pn junction.
- the parasitic capacitance does not increase even if the area of the n electrode in contact with the support portion is enlarged. Therefore, by adopting such a structure, it is possible to improve heat dissipation without increasing the parasitic capacitance.
- the distance between the p and n electrodes can be shortened by increasing the width of the n electrode on the side of the resonator to the optical resonator side than the width of the n electrode on the side of the reflector. Reduction is realized.
- a flag-shaped dent region 27 in FIG.
- the short side length of one rectangle is the short side of the other rectangle.
- the shape is longer than the side length, this is hereinafter referred to as a flag shape.
- the present invention is applied to an InGaAlAs quantum well type laser having a wavelength band of 1.3 ⁇ m formed on an InP substrate, but the substrate material, active layer material, and oscillation wavelength are limited to this example. It is not a thing.
- the present invention can be similarly applied to other material systems such as a 1.55 ⁇ m band InGaAsP laser.
- the embodiment of the BH structure has been shown.
- the present invention can also be applied to a ridge wave guide (RWG) type structure.
- Example 2 is an example in which the present invention is applied to a horizontal cavity surface emitting laser having an RWG structure and an element width of 250 ⁇ m.
- FIG. 5A is a bird's-eye view of the surface of the laser element
- FIG. 5B is a light emission surface.
- FIG. 5C is a mounting cross-sectional view of the laser element in the direction perpendicular to the optical axis. The structure of the laser element will be described in detail with reference to FIGS. 5A and 5B.
- an n-type semiconductor layer 4001, an active layer 4002, and a p-type semiconductor layer 4003 are sequentially grown on a Fe-doped semi-insulating semiconductor substrate 4000, and are not shown, but are directly on the active layer 4002.
- the n-type semiconductor layer 4001 uses n-doped InP
- the p-type semiconductor layer 4003 uses p-doped InP
- the active layer 4002 uses, for example, a strained quantum well structure of InGaAlAs
- the diffraction grating layer uses GaInAsP. Etc. are used.
- a reflection mirror 4009 obtained by etching the semiconductor buried layer is provided.
- the p-type semiconductor layer 4003 immediately above the resonator has a ridge shape etched into a convex stripe shape.
- a p-type electrode 4004 is formed on the ridge shape.
- the p-type semiconductor layer 4003 and the active layer 4002 were dug until reaching the n-type semiconductor layer 4001, and an n-type electrode 4007 was formed on the n-type semiconductor layer 4001.
- the n-type electrode 4007 is formed so as to surround the reflecting mirror 4009 and the resonator, and the side portion of the reflecting mirror 4009 and the side portion of the resonator are electrodes. Are formed to have different widths.
- a lens having the same shape as in Example 1 was formed on the back surface of the semi-insulating semiconductor substrate 4000.
- an active layer, a diffraction grating, and a p-type semiconductor layer 4003 having the same specifications as those in Example 1 were sequentially grown on the semi-insulating semiconductor substrate 4000 by using the MOCVD method. Although not shown in FIG. 5, a contact layer having the same specifications as in Example 1 was also formed.
- the active layer, the diffraction grating layer, and the p-type semiconductor layer 4003 are partially etched using a normal photolithography process and wet etching, and then a semi-insulating semiconductor in which Fe is doped in a portion where a reflecting mirror is formed later The layer was grown as a waveguide layer.
- the waveguide portion may be a semi-insulating semiconductor doped with another heavy element or the same semiconductor as the p-type semiconductor layer 4003. Subsequently, a normal photolithography was combined with dry and wet etching to form a ridge portion. At this time, a portion for later forming an n-type electrode was also formed at the same time. Thereafter, in the same manner as in Example 1, a reflecting mirror 4009, an electrical separation groove 4008, an n-type electrode 4007, a p-type electrode 4004, and a lens 4010 were formed.
- 25 Gbit / s operation at 100 ° C. reflects the highly efficient current injection by the ridge structure and the effect of the present invention, which is an improvement in heat dissipation and a reduction in device capacity. Realized.
- FIG. 6 shows a third embodiment in which the present invention is applied to a horizontal cavity vertical emission laser.
- FIG. 6 is a bird's-eye view of the laser element.
- This embodiment is an array type laser in which a plurality of horizontal resonator vertical emission lasers are formed on the same substrate.
- a four-channel parallel structure is adopted.
- the RWG type and the BH type structure are possible, but in this embodiment, the RWG type is used.
- the laser elements 3003 forming the 4-channel array are electrically separated from each other by an electrical separation groove 4008 shown as a single laser element in FIG.
- the manufacturing method is the same as in Example 2.
- the substrate is a semi-insulating semiconductor substrate, but a laminated substrate having a semi-insulating semiconductor layer and a conductive semiconductor layer may be used.
- a multilayer structure substrate can reduce the etch pit density causing the lattice defect as compared with a normal semi-insulating substrate, and thus can improve manufacturing reliability and yield.
- the element width L1 in the direction perpendicular to the resonator of this element is 250 ⁇ m. That is, the interval between the lenses from which light is emitted is also 250 ⁇ m, and this pitch width is equal to the pitch interval of the ready-made ribbon fiber. That is, by using this element, an optical module having a plurality of channels can be easily produced.
- the cross-sectional view of the optical module is the same as that shown in FIG. 4A.
- the fiber is a four-channel ribbon fiber, and four channels are arranged in the direction perpendicular to the paper surface.
- the optical element mounting machine plate similarly to Example 2, has a support portion for fitting, so that the alignment of the elements can be easily performed.
- a multi-channel optical module capable of transmitting data at a total of 100 Gbps at 25 Gbps per channel and having an excellent production cost can be produced.
- FIG. 7 shows a fourth example in which the present invention is applied to a horizontal cavity vertical emission laser having an element width L2 of 500 ⁇ m.
- the details of the structure of this element are as follows.
- this laser is a DFB type laser in which a diffraction grating layer is provided inside the p-type semiconductor layer 63.
- the RWG type laser is used, but the BH type is also possible.
- the n-electrode pad 65 can be formed on the stud portion provided on the side of the region where the resonator and the mirror are formed. For this reason, the entire mirror front can be used as the n electrode formation region, and the area of the n electrode can be greatly increased. For this reason, by using this structure, a reduction in element resistance and an improvement in heat dissipation are achieved, and the optical output at 85 ° C. is improved by a factor of about 2 with respect to a conventional horizontal resonator vertical emission laser. I was able to.
- FIG. 8 shows a fourth embodiment in which the present invention is applied to a horizontal resonator vertical emission laser.
- This laser is a horizontal resonator vertical emission laser having an element width L3 of 500 ⁇ m, which is the same as the structure of the third embodiment.
- the n-electrode wrap around the side of the reflecting mirror and the optical resonator is formed only on one side of the reflecting mirror and the resonator, whereas in this structure, the reflecting mirror and the resonator are provided. It is formed on both sides of the side part.
- n-electrodes on the side portions of the reflector and the resonator that do not have the p-electrode pad are made to have a flag-shaped recess (in the area indicated by reference numeral 77 in the figure).
- flag shapes Two types of rectangular combined shapes are referred to as flag shapes as defined in the first embodiment.
- the n-electrode digging grooves are formed on both sides of the reflector and the resonator, it is necessary to reduce the pad area of the p electrode and there is a concern that the mounting strength on the p side may be reduced.
- the parasitic capacitance of the element can be reduced by reducing the area.
- the n electrode area can be enlarged, the heat dissipation characteristics can be further improved.
- the RWG type laser is used, but the BH type is also possible.
- a horizontal cavity surface emitting laser including a reflecting mirror provided at a part of the optical waveguide layer for emitting from the back surface of the first conductive layer;
- a first electrode is provided on the first conductivity type cladding layer on the bottom surface of the groove-shaped portion, and the first electrode is separated from the first electrode;
- a horizontal cavity surface emitting laser is fitted to at least a part of the groove-like portion where the first electrode is formed, wherein a second electrode is provided on the second conductive type cladding layer.
- Flip chip mounting on an optical element mounting board having a supporting member shaped to fit the supporting member and the groove-shaped portion, and so that at least a part of the supporting member and the first electrode are in contact with each other An optical module.
- the indicator member is made of the same material as a member for adhering an element on the optical element substrate.
- the indicating member is a conductive material that is a member that adheres an element onto the optical element substrate.
- the side portions of the reflecting mirror and the resonator structure of the first electrode are formed only on either the left or right side of the reflecting mirror and the resonator portion.
- (6) The optical module according to any one of (1) to (5), wherein the horizontal cavity surface emitting laser has the semiconductor substrate formed of a semi-insulating semiconductor substrate.
- the semiconductor substrate has a laminated structure of a semi-insulating semiconductor layer and a conductive semiconductor layer, and a laser portion is formed on the semi-insulating layer.
- the horizontal resonator surface-emitting laser is formed by arranging at least two horizontal resonator surface-emitting lasers according to (6) or (7) above on the same semiconductor substrate. 8.
- the horizontal resonator surface-emitting laser has an integrated lens formed by processing a substrate on a light-emitting surface on the back surface of the semiconductor substrate.
- the optical module according to crab. The optical module according to (8), wherein the horizontal cavity surface emitting laser has an element width of 250 ⁇ m.
- n-type electrode 1001 ... stem, 1002 ... Lead pin, 1003, 2005 ... Light emitting element, 1004 ... Light receiving element, 1005 ... Package lens, 1006 ... Ferrule, 1007 ... Cap, 1008, 2000, 3000, 4017 ... Optical element mounting substrate, 1009 ... Optical fiber, 2004 ... support member for fitting, 2001, 2002, 2007, 2008, 3001, 3002, 4015, 4016 ... electric lines, 2014, 4014 ... solder, 3003 ... Array type light emitting element, 25,4005 ... p-type electrode pad.
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Abstract
Description
このため、従来1チャンネルの信号を用いていた伝送を複数チャンネルで行う必要が生じる。例えば、先述した、ハイエンドルータ内ではチャンネル当り25Gbpsで40チャンネルを使用する構成などが想定されている。従って、高密度且つ簡易実装性に優れる高速半導体光素子は今後の大容量システムにおいてキーデバイスの一つとなる。
従って、従来構造の素子では容量低減と放熱性を両立することが困難であった。
本発明の水平共振器表面出射型レーザにおいて、半導体基板上に、第1導電型クラッド層と光を発生する活性層と第2導電型クラッド層の順に積層された積層構造を含み、光を面内方向に反射もしくは共振させる共振器構造部と、半導体基板上の共振器構造部内およびその延在領域に設けられた、活性層から発生した光を導波する導波路層と、光導波路層の一部に設けられ、共振構造部から放射されるレーザ光の光路を変えて半導体基板の裏面から該レーザ光を出射させる反射部とを備え、共振器構造部および反射部の側面に沿った半導体基板上に設けられた第1電極と、共振器構造部の主表面上に設けられた第2電極とを有し、第1電極は、導波路層を導波される光の進行方向と交わる方向に位置する反射部の一側面に沿って設けられた電極(1)と、導波路層を導波される光の進行方向に平行する方向に位置する共振器構造部の一側面および反射部の他側面に沿って設けられた電極(2)とを含み、電極(2)の形状は、少なくとも2箇所で異なる幅を有することを特徴とする。
また、電気線路のパターニングによりインピーダンスマッチングの設計が可能であるため、電気的な設計の自由度が大幅にあがるため高速化に有利である。
光は該基板1の裏面のn電極6と該基板1の表面のp電極5からInGaAsP活性層2に電流が注入されて発生する。発生した光は屈折率が周期的に変化する回折格子3が形成された導波路中を伝播する。光がこの回折格子で帰還されることでレーザ発振が起こる。本レーザは所謂分布帰還形(DFB:Distributed Feedback)レーザである。こうして発生したレーザ光は導波路の一端をエッチング加工することで形成された45°反射鏡8で全反射し、基板裏面方向に導かれ、基板裏面の出射面9から出射される。素子はチップ化された後、レーザサブマウント11上に、p電極5のある面を接着面としてAuSnはんだでダイボンドされる。一方、n電極は50μ径の金ワイヤ10を用いて、図示していないが、グランドと接続される。
図3A-Fに示すように、本実施例の波長1.3μm帯のInGaAlAs量子井戸型水平共振器面発光レーザ素子は、ストライプ状に加工された半導体のヘテロ構造が半絶縁層で埋め込まれた埋込みヘテロ型(BH:Buried Hetero)構造を有する。この例では、埋込みへテロ構造におけるストライプ状の光導波路部分の周囲は、Fe(鉄)をInPにドープした高抵抗の半絶縁層87で埋め込まれている。n型半導体は硫黄(Sulfur:元素記号S)をドープし、p型半導体は亜鉛(Zinc:元素記号Zn)をドープするものとする。
また、本実施例では、DFBレーザで構成したが、DBRレーザでも構わない。
まず、図3Aに示すように、レーザ部分の構造を形成するために、半絶縁基板80上にn型InP基板で構成されたn型半導体基板81(クラッド層)を成長し、次にn型InGaAlAsで構成された光閉じ込め層、InGaAlAsで構成された歪多重量子井戸層、およびp型InGaAlAsで構成された光閉じ込め層からなるInGaAlAsで構成された活性層82を形成する。
実装の際にはこの支持部が上記掘り込み溝2006に勘合させることで簡易に位置合わせが可能である。また、図4Cには実装された素子の光軸垂直方向断面図を示す。同図に示すように、上記勘合用の支持部は、はんだ2014で形成されており、n型電極に接触するように設計されている。このため、この支持部を通じて、素子から、光素子搭載基板への放熱パスが形成されるため、動作時の素子の放熱性が大幅に向上する。尚、上記勘合用の支持部は銅や銅とタングステンの合金などの熱伝導性のよい金属材料で形成しても良い。
続いて、通常のホトリソグラフィーとドライ及びウェットエッチングを組み合わせ、リッジ部分を形成した。この時、後にn型電極を形成する部分も同時に形成した。その後、実施例1と同様にして反射鏡4009、電気分離溝4008、n型電極4007、p型電極4004、及びレンズ4010を形成した。
半絶縁性基板60上に、n型半導体層61と活性層62とp型半導体層63が順に積層されている。尚、図示しないが、本レーザはp型半導体層63の内部に回折格子層が設けられDFB型レーザである。尚、本実施例ではRWG型のレーザとしたが、BH型でももちろん可能である。
実施例4では反射鏡及び光共振器の側方部へのn電極回りこみを反射鏡および、共振器の一方の側にのみ形成していたのに対して、本構造では反射鏡と共振器の側方部の両側に形成されている。この時、p電極パッドの実装領域を確保するために、反射鏡及び共振器のp電極パッドが無い方の側方部のn電極のみを、旗型の凹み(図中の符号77の領域における2種類の長方形の結合形状を、実施例1で定義したように、旗型と称する。)を有する形状としている。本構造では反射鏡と共振器の両側にn電極用の掘り込み溝を形成するため、p電極のパッド面積を縮小する必要があり、p側の実装強度が減少する懸念があるが、pパッドの面積を小さくする分、素子の寄生容量を低減することができる。尚且つ、n電極面積を拡大することが可能であるために放熱特性を更に向上させることが可能である。尚、本実施例ではRWG型のレーザとしたが、BH型でももちろん可能である。
(1)半導体基板上に設けられた、第1導電型クラッド層と光を発生する活性層と第2導電型クラッド層の順に積相された積層構造を含み、光を面内方向に反射もしくは共振させる共振器構造部と、前記半導体基板の少なくとも一部に設けられた、前記活性層から発生した光を導波する導波路層と、前記共振構造部から放射されるレーザ光を前記半導体基板の裏面から出射するための前記光導波路層の一部に設けられた反射鏡とを備える、水平共振器面出射型レーザにおいて、前記共振器構造および前記反射鏡の周辺部を、前記第1導電型クラッド層に到達する深さに溝状に掘り込み、前記溝状部の底面の前記第1導電型クラッド層上に第一電極を設け、前記第1電極とは別に、前記第1電極と同じ面側に前記共振器構造の上方に位置するように前記第2導電型クラッド層上に第2電極が設けられていることを特徴とする、水平共振器面出射型レーザを前記第1電極が形成されている溝状部の少なくとも一部に勘合するような形状の支持部材を備えた光素子搭載基盤上に、前記支持部材と前記溝状部を勘合させ、且つ前記支持部材と前記第1電極の少なくとも一部が接触するようにフリップチップ実装することを特徴とする光モジュール。
(2)前記指示部材が前記光素子基板上に素子を接着する部材と同一の材料であることを特徴とする前項(1)に記載の光モジュール。
(3)前記指示部材が前記光素子基板上に素子を接着する部材とことなる導電性の材料であることを特徴とする前項(1)に記載の光モジュール。
(4)前記水平共振器面出射型レーザが前記第1電極のうち前記反射鏡および前記共振器構造の側方部分が、前記反射鏡および前記共振器部分の左右いずれか一方の側のみ形成されていることを特徴とする前項(1)乃至(3)のいずれかに記載の光モジュール。
(5)前記水平共振器面出射型レーザが前記第1電極の前記反射鏡側方部と前記共振器側方部とでは電極の幅が異なっていることを特徴とする前項(1)乃至(3)のいずれかに記載の光モジュール。
(6)前記水平共振器面出射型レーザが、前記半導体基板が半絶縁性の半導体基板で形成されていることを特徴とする前項(1)乃至(5)のいずれかに記載の光モジュール。
(7)前記水平共振器面出射型レーザが、前記半導体基板が半絶縁性の半導体層と導電性の半導体層の積層構造であり、レーザ部分が前記半絶縁性層上に形成されていることを特徴とする前項(1)乃至(5)のいずれかに記載の光モジュール。
(8)前記水平共振器面出射形レーザが、前項(6)または(7)に記載の水平共振器面出射型レーザを少なくとも2素子以上、同一の半導体基板上に並べて形成されており、各素子の間には半絶縁半導体層に達する深さの電気分離溝が形成されていることを特徴とする前項(6)または(7)に記載の光モジュール。
(9)前記水平共振器面出射形レーザが、前記半導体基板裏面の光出射面に基板を加工して集積レンズが形成されていることを特徴とする、前項(1)乃至(8)のいずれかに記載の光モジュール。
(10)前記水平共振器面出射型レーザが、素子幅が250μmであることを特徴とする、前項(8)に記載の光モジュール。
2…InGaAsP活性層、
3、83…回折格子、
4…p型InPクラッド、
5,13,24,25,64,74,2009,4004,4011…p型電極、
6,27,66,67,76,77,2010,4007,4012…n型電極、
26,65,75,4006…n電極パッド、
68…ダミーパッド、
7…InP窓部、
8,14,29,69,78,100,4009…反射鏡、
9…光出射面、
10…金ワイヤ、
11…レーザサブマウント、
12…SiO2絶縁膜、
15…引き出しパッド、
20,60,70,80,2011,4000…半絶縁性半導体基板、
21,61,71,81,2012,4001…n型半導体層、
22,62,72,82,2013,4002…活性層、
23,63,73,84,4003…p型半導体層、
28,4008…電気分離溝、
30,4010…集積レンズ、
85…コンタクト層、
86…酸化シリコン、
31,87,2015…埋め込み半絶縁層、
89,2006,4013…掘り込み溝、
90…窒化珪素マスク、
91…柱状部、
92…無反射膜、
93…レンズ、
101…p型電極、
102…n型電極、
1001…ステム、
1002…リードピン、
1003,2005…発光素子、
1004…受光素子、
1005…パッケージレンズ、
1006…フェルール、
1007…キャップ、
1008,2000,3000,4017…光素子搭載基板、
1009…光ファイバ、
2004…勘合用支持部材、
2001,2002,2007,2008,3001,3002,4015,4016…電気線路、
2014,4014…はんだ、
3003…アレイ型発光素子、
25,4005…p型電極パッド。
Claims (11)
- 半導体基板上に、第1導電型クラッド層と光を発生する活性層と第2導電型クラッド層の順に積層された積層構造を含み、光を面内方向に反射もしくは共振させる共振器構造部と、
前記半導体基板上の前記振器構造部内およびその延在領域に設けられた、前記活性層から発生した光を導波する導波路層と、
前記光導波路層の一端に設けられ、前記共振構造部から放射されるレーザ光の光路を変えて前記半導体基板の裏面から該レーザ光を出射させる反射部とを備え、
前記共振器構造部および前記反射部の側面に沿って前記半導体基板上に設けられた第1電極と、前記共振器構造部の主表面上に設けられた第2電極と、を有し、
前記第1電極は、前記導波路層を導波される光の進行方向と交わる方向に位置する前記反射部の一側面に沿って設けられた電極(1)と、前記導波路層を導波される光の進行方向に平行する方向に位置する前記共振器構造部の一側面および前記反射部の他側面に沿って設けられた電極(2)とを含み、
前記電極(2)の形状は、少なくとも2箇所で異なる幅を有することを特徴とする水平共振器面出射型レーザ。 - 前記反射部側面及び前記共振部側面の少なくとも一部を囲むように前記半導体基板上方に設けられ、底面を前記第1導電型クラッド層とする溝部を有し、
前記溝部に前記電極(1)および前記電極(2)が設けられていることを特徴とする請求項1に記載の水平共振器面出射型レーザ。 - 前記電極(2)が、前記反射部および前記共振器構造部の一側面または他側面のいずれか一方に設けられていることを特徴とする請求項1に記載の水平共振器面出射型レーザ。
- 前記電極(2)が、前記反射部および前記共振器構造部の一側面および他側面のいずれかにも設けられていることを特徴とする請求項1に記載の水平共振器面出射型レーザ。
- 前記電極(2)の形状は、前記反射部の側面に沿って設けられた第1の短辺を有する方形と、前記共振器構造部の側面に沿って設けられた第2の短辺を有する方形とで構成され、該第1の短辺の幅と該第2の短辺の幅とが異なっていることを特徴とする請求項1に記載の水平共振器面出射型レーザ。
- 前記第1の短辺の幅が、前記第2の短辺の幅より短いことを特徴とする請求項5に記載の水平共振器面出射型レーザ。
- 前記半導体基板が半絶縁性の半導体層で形成されていることを特徴とする請求項1に記載の水平共振器面出射型レーザ。
- 前記半導体基板が、半絶縁性の半導体層と導電性の半導体層の積層構造であり、前記共振器構造部が前記半絶縁性半導体層上に形成されていることを特徴とする請求項1に記載の水平共振器面出射型レーザ。
- 前記半導体基板裏面の光出射面に、前記半導体基板を加工し形成された集積レンズが設けられていることを特徴とする請求項1に記載の水平共振器面出射型レーザ。
- 請求項5又は6に記載の水平共振器面出射型レーザが少なくとも2素子以上、同一の半導体基板上に並べて設けられており、各素子の間には前記半絶縁半導体層に達する深さの電気分離溝が設けられていることを特徴とする水平共振器面出射型レーザ。
- 前記素子の一辺の幅が、250μmであることを特徴とする請求項10に記載の水平共振器面出射型レーザ。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03145181A (ja) * | 1989-10-18 | 1991-06-20 | Alcatel Nv | レーザ・ウエハの製造法 |
JPH0637402A (ja) * | 1992-07-20 | 1994-02-10 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザ光反射素子 |
JPH08186327A (ja) * | 1994-12-29 | 1996-07-16 | Sony Corp | 半導体素子の封止構造 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE342596T1 (de) * | 2002-04-25 | 2006-11-15 | Avalon Photonics Ag | Hochgeschwindigkeitstauglicher vertikalresonator- oberflächenemissionslaser (vcsel) mit niedriger parasitärkapazität |
JP2007005594A (ja) | 2005-06-24 | 2007-01-11 | Opnext Japan Inc | 半導体光素子及びそれを用いたモジュール |
JP2008277445A (ja) * | 2007-04-26 | 2008-11-13 | Opnext Japan Inc | 半導体レーザおよび光モジュール |
-
2010
- 2010-11-29 US US13/512,595 patent/US8855160B2/en not_active Expired - Fee Related
- 2010-11-29 WO PCT/JP2010/071207 patent/WO2011065517A1/ja active Application Filing
- 2010-11-29 JP JP2011543339A patent/JP5466712B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03145181A (ja) * | 1989-10-18 | 1991-06-20 | Alcatel Nv | レーザ・ウエハの製造法 |
JPH0637402A (ja) * | 1992-07-20 | 1994-02-10 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザ光反射素子 |
JPH08186327A (ja) * | 1994-12-29 | 1996-07-16 | Sony Corp | 半導体素子の封止構造 |
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