DE69205399D1 - Spannungsverformte Quantumwell-Laserdiode. - Google Patents

Spannungsverformte Quantumwell-Laserdiode.

Info

Publication number
DE69205399D1
DE69205399D1 DE69205399T DE69205399T DE69205399D1 DE 69205399 D1 DE69205399 D1 DE 69205399D1 DE 69205399 T DE69205399 T DE 69205399T DE 69205399 T DE69205399 T DE 69205399T DE 69205399 D1 DE69205399 D1 DE 69205399D1
Authority
DE
Germany
Prior art keywords
voltage
laser diode
quantum well
well laser
deformed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69205399T
Other languages
English (en)
Other versions
DE69205399T2 (de
Inventor
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of DE69205399D1 publication Critical patent/DE69205399D1/de
Application granted granted Critical
Publication of DE69205399T2 publication Critical patent/DE69205399T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
DE69205399T 1991-12-04 1992-11-25 Spannungsverformte Quantumwell-Laserdiode. Expired - Fee Related DE69205399T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32039191A JPH05160515A (ja) 1991-12-04 1991-12-04 量子井戸型レーザダイオード

Publications (2)

Publication Number Publication Date
DE69205399D1 true DE69205399D1 (de) 1995-11-16
DE69205399T2 DE69205399T2 (de) 1996-04-04

Family

ID=18120948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69205399T Expired - Fee Related DE69205399T2 (de) 1991-12-04 1992-11-25 Spannungsverformte Quantumwell-Laserdiode.

Country Status (4)

Country Link
US (1) US5263040A (de)
EP (1) EP0545262B1 (de)
JP (1) JPH05160515A (de)
DE (1) DE69205399T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175598A (ja) * 1991-12-25 1993-07-13 Sanyo Electric Co Ltd 半導体レーザ装置
KR100281939B1 (ko) * 1993-01-13 2001-03-02 고오사이 아끼오 반도체 에피택셜 기판
JPH0714850A (ja) * 1993-06-15 1995-01-17 Matsushita Electric Ind Co Ltd ヘテロ接合電界効果トランジスタ
CA2138912C (en) * 1993-12-24 1999-05-04 Shoji Ishizaka Semiconductor laser device
JPH0878786A (ja) * 1994-09-02 1996-03-22 Mitsubishi Electric Corp 歪量子井戸の構造
JP3691544B2 (ja) * 1995-04-28 2005-09-07 アジレント・テクノロジーズ・インク 面発光レーザの製造方法
JP3428797B2 (ja) * 1996-02-08 2003-07-22 古河電気工業株式会社 半導体レーザ素子
US5841802A (en) * 1996-08-30 1998-11-24 Mcdonnell Douglas Corporation Multiple, isolated strained quantum well semiconductor laser
US6912237B2 (en) 2001-02-06 2005-06-28 The Furukawa Electric Co., Ltd. Semiconductor laser module and semiconductor laser device having light feedback function
JP3988429B2 (ja) 2001-10-10 2007-10-10 ソニー株式会社 半導体発光素子、画像表示装置及び照明装置とその製造方法
JP2005236024A (ja) * 2004-02-19 2005-09-02 Fuji Photo Film Co Ltd 半導体レーザ素子
JP4725425B2 (ja) * 2006-06-06 2011-07-13 住友電気工業株式会社 半導体レーザを作製する方法
JP2011114214A (ja) * 2009-11-27 2011-06-09 Mitsubishi Electric Corp 半導体レーザ装置
JP6325948B2 (ja) 2014-09-02 2018-05-16 株式会社東芝 半導体発光素子および光結合装置
CN112398001B (zh) * 2020-10-10 2022-04-05 华芯半导体研究院(北京)有限公司 新型复合量子阱结构的vcsel芯片结构及制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63208296A (ja) * 1987-02-24 1988-08-29 Sharp Corp 半導体装置
EP0325275B1 (de) * 1988-01-20 1994-09-07 Nec Corporation Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls
US5146466A (en) * 1988-09-29 1992-09-08 Sanyo Electric Co., Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
US5263040A (en) 1993-11-16
EP0545262B1 (de) 1995-10-11
JPH05160515A (ja) 1993-06-25
DE69205399T2 (de) 1996-04-04
EP0545262A1 (de) 1993-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee