DE69004629T2 - Quantenstruktur-Halbleiterlaser. - Google Patents

Quantenstruktur-Halbleiterlaser.

Info

Publication number
DE69004629T2
DE69004629T2 DE90401715T DE69004629T DE69004629T2 DE 69004629 T2 DE69004629 T2 DE 69004629T2 DE 90401715 T DE90401715 T DE 90401715T DE 69004629 T DE69004629 T DE 69004629T DE 69004629 T2 DE69004629 T2 DE 69004629T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
quantum structure
structure semiconductor
quantum
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90401715T
Other languages
English (en)
Other versions
DE69004629D1 (de
Inventor
Claude Weisbuch
Julien Nagle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE69004629D1 publication Critical patent/DE69004629D1/de
Publication of DE69004629T2 publication Critical patent/DE69004629T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
DE90401715T 1989-07-04 1990-06-19 Quantenstruktur-Halbleiterlaser. Expired - Fee Related DE69004629T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8908965A FR2649549B1 (fr) 1989-07-04 1989-07-04 Laser semiconducteur a puits quantique

Publications (2)

Publication Number Publication Date
DE69004629D1 DE69004629D1 (de) 1993-12-23
DE69004629T2 true DE69004629T2 (de) 1994-03-10

Family

ID=9383445

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90401715T Expired - Fee Related DE69004629T2 (de) 1989-07-04 1990-06-19 Quantenstruktur-Halbleiterlaser.

Country Status (5)

Country Link
US (1) US5081634A (de)
EP (1) EP0407251B1 (de)
JP (1) JPH0346385A (de)
DE (1) DE69004629T2 (de)
FR (1) FR2649549B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172384A (en) * 1991-05-03 1992-12-15 Motorola, Inc. Low threshold current laser
JPH05235470A (ja) * 1992-02-24 1993-09-10 Eastman Kodak Japan Kk レーザダイオード
EP0575684A1 (de) * 1992-06-22 1993-12-29 International Business Machines Corporation Laserdiode mit entkoppelter optischer und elektronischer Begrenzung
JP2500617B2 (ja) * 1993-06-25 1996-05-29 日本電気株式会社 屈折率制御光半導体構造
US5949807A (en) * 1994-12-28 1999-09-07 Mitsui Chemicals, Inc. Semiconductor laser device
FR2734097B1 (fr) * 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
FR2761537B1 (fr) 1997-04-01 1999-06-11 Thomson Csf Laser comprenant un empilement de diodes laser epitaxiees compris entre deux miroirs de bragg
US7098471B2 (en) * 2004-06-14 2006-08-29 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Semiconductor quantum well devices and methods of making the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1279394C (en) * 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
JPS63153887A (ja) * 1986-08-08 1988-06-27 Sharp Corp 半導体レ−ザ素子
JP2558768B2 (ja) * 1987-12-29 1996-11-27 シャープ株式会社 半導体レーザ装置
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
EP0407251B1 (de) 1993-11-18
US5081634A (en) 1992-01-14
EP0407251A1 (de) 1991-01-09
JPH0346385A (ja) 1991-02-27
FR2649549B1 (fr) 1991-09-20
DE69004629D1 (de) 1993-12-23
FR2649549A1 (fr) 1991-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee