FR2768566B1 - Composants presentant une cavite optique definie par au moins un miroir courbe - Google Patents
Composants presentant une cavite optique definie par au moins un miroir courbeInfo
- Publication number
- FR2768566B1 FR2768566B1 FR9711374A FR9711374A FR2768566B1 FR 2768566 B1 FR2768566 B1 FR 2768566B1 FR 9711374 A FR9711374 A FR 9711374A FR 9711374 A FR9711374 A FR 9711374A FR 2768566 B1 FR2768566 B1 FR 2768566B1
- Authority
- FR
- France
- Prior art keywords
- components
- optical cavity
- cavity defined
- curved mirror
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0615—Shape of end-face
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9711374A FR2768566B1 (fr) | 1997-09-12 | 1997-09-12 | Composants presentant une cavite optique definie par au moins un miroir courbe |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9711374A FR2768566B1 (fr) | 1997-09-12 | 1997-09-12 | Composants presentant une cavite optique definie par au moins un miroir courbe |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2768566A1 FR2768566A1 (fr) | 1999-03-19 |
FR2768566B1 true FR2768566B1 (fr) | 2000-03-31 |
Family
ID=9511028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9711374A Expired - Lifetime FR2768566B1 (fr) | 1997-09-12 | 1997-09-12 | Composants presentant une cavite optique definie par au moins un miroir courbe |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2768566B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6727520B2 (en) | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
EP1221722A1 (fr) * | 2001-01-06 | 2002-07-10 | Interuniversitair Microelektronica Centrum Vzw | Diode électroluminescente parabolique à efficience élevée |
EP1221725A1 (fr) * | 2001-01-04 | 2002-07-10 | Interuniversitair Microelektronica Centrum Vzw | Diode électroluminescente parabolique à efficience élevée |
EP1265327B1 (fr) | 2001-06-02 | 2007-11-07 | Seoul National University Industry Foundation | Laser à émission de surface à cavité verticale |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4023117A (en) * | 1976-02-03 | 1977-05-10 | The United States Of America As Represented By The Secretary Of The Navy | Stimulated raman scattering resonator |
JPS59121985A (ja) * | 1982-12-28 | 1984-07-14 | Nec Corp | 反射電極型半導体発光素子 |
WO1991006139A1 (fr) * | 1989-10-20 | 1991-05-02 | Australian Electro Optics Pty. Ltd. | Systeme de laser en forme de tige conique a couplage par faisceaux de fibres segmentes et a pompage par diodes |
US5253262A (en) * | 1990-10-31 | 1993-10-12 | Kabushiki Kaisha Toshiba | Semiconductor laser device with multi-directional reflector arranged therein |
JPH0555703A (ja) * | 1991-05-15 | 1993-03-05 | Fujitsu Ltd | 面発光レーザ装置 |
-
1997
- 1997-09-12 FR FR9711374A patent/FR2768566B1/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2768566A1 (fr) | 1999-03-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 20 |