DE69826502D1 - Laserdiode mit vergrabener heterostruktur - Google Patents

Laserdiode mit vergrabener heterostruktur

Info

Publication number
DE69826502D1
DE69826502D1 DE69826502T DE69826502T DE69826502D1 DE 69826502 D1 DE69826502 D1 DE 69826502D1 DE 69826502 T DE69826502 T DE 69826502T DE 69826502 T DE69826502 T DE 69826502T DE 69826502 D1 DE69826502 D1 DE 69826502D1
Authority
DE
Germany
Prior art keywords
heterostructure
burned
laser diode
diode
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69826502T
Other languages
English (en)
Other versions
DE69826502T2 (de
Inventor
Bjoern Stoltz
Olof Sahlen
Ulf Oehlander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Application granted granted Critical
Publication of DE69826502D1 publication Critical patent/DE69826502D1/de
Publication of DE69826502T2 publication Critical patent/DE69826502T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
DE69826502T 1997-07-04 1998-07-03 Laserdiode mit vergrabener heterostruktur Expired - Fee Related DE69826502T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9702629 1997-07-04
SE9702629A SE511719C2 (sv) 1997-07-04 1997-07-04 Begravd heterostrukturlaser med ströminneslutande skikt
PCT/SE1998/001315 WO1999001019A2 (en) 1997-07-04 1998-07-03 A laser diode of the type having a buried heterostructure

Publications (2)

Publication Number Publication Date
DE69826502D1 true DE69826502D1 (de) 2004-10-28
DE69826502T2 DE69826502T2 (de) 2005-09-29

Family

ID=20407677

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69826502T Expired - Fee Related DE69826502T2 (de) 1997-07-04 1998-07-03 Laserdiode mit vergrabener heterostruktur

Country Status (11)

Country Link
US (1) US6222865B1 (de)
EP (1) EP1019993B1 (de)
JP (1) JP2001509638A (de)
KR (1) KR100404307B1 (de)
CN (1) CN1261985A (de)
AU (1) AU8251798A (de)
CA (1) CA2294808A1 (de)
DE (1) DE69826502T2 (de)
SE (1) SE511719C2 (de)
TW (1) TW399343B (de)
WO (1) WO1999001019A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6819695B1 (en) * 2000-01-07 2004-11-16 Triquint Technology Holding Co Dopant diffusion barrier layer for use in III-V structures
GB0126642D0 (en) * 2001-11-06 2002-01-02 Denselight Semiconductors Pte Design of current blocking structure to improve semiconductor laser performance
JP4142532B2 (ja) * 2003-09-02 2008-09-03 シャープ株式会社 光学式速度計、変位情報測定装置および搬送処理装置
US7919349B2 (en) * 2008-02-22 2011-04-05 Alcatel-Lucent Usa Inc. Photonic integration scheme
TWI416764B (zh) * 2010-05-06 2013-11-21 發光二極體
AU2012298912B2 (en) 2011-08-22 2016-07-07 Exogenesis Corporation Drug delivery system and method of manufacturing thereof
WO2021022476A1 (zh) * 2019-08-06 2021-02-11 华为技术有限公司 一种波导结构、集成光芯片及实现电学隔离的方法
CN111313233B (zh) * 2020-03-04 2021-07-27 常州纵慧芯光半导体科技有限公司 一种激光器及其制造方法与应用
CN113258442B (zh) * 2021-07-14 2021-11-09 华芯半导体研究院(北京)有限公司 垂直腔面发射激光器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168981A (ja) 1985-01-23 1986-07-30 Hitachi Ltd 半導体レ−ザ装置
JPH0828554B2 (ja) 1989-10-20 1996-03-21 三菱電機株式会社 半導体レーザ及びその製造方法
US5179040A (en) 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device
JP2718342B2 (ja) 1993-05-28 1998-02-25 日本電気株式会社 半導体レーザ及びその製造方法
US5847415A (en) * 1995-03-31 1998-12-08 Nec Corporation Light emitting device having current blocking structure

Also Published As

Publication number Publication date
DE69826502T2 (de) 2005-09-29
CA2294808A1 (en) 1999-01-14
SE9702629L (sv) 1999-01-05
WO1999001019A3 (en) 1999-04-01
AU8251798A (en) 1999-01-25
US6222865B1 (en) 2001-04-24
KR100404307B1 (ko) 2003-11-03
WO1999001019A2 (en) 1999-01-14
SE511719C2 (sv) 1999-11-15
TW399343B (en) 2000-07-21
KR20010020581A (ko) 2001-03-15
EP1019993B1 (de) 2004-09-22
SE9702629D0 (sv) 1997-07-04
JP2001509638A (ja) 2001-07-24
EP1019993A2 (de) 2000-07-19
CN1261985A (zh) 2000-08-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee